On the yield assessment and improvement of III-V on silicon lasers

Karim Hassan; Joan M. Ramirez; Valentin Ramez; Stéphane Malhouitre; Christophe Jany; Sylvain Guerber; Delphine Néel; Jean Decobert; David Bitauld

doi:10.1117/12.2616681

5 March 2022 On the yield assessment and improvement of III-V on silicon lasers

Karim Hassan, Joan M. Ramirez, Valentin Ramez, Stéphane Malhouitre, Christophe Jany, Sylvain Guerber, Delphine Néel, Jean Decobert, David Bitauld

Author Affiliations +

Proceedings Volume PC12007, Optical Interconnects XXII; PC120070D (2022) https://doi.org/10.1117/12.2616681
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

Heterogeneous integration of III-V on silicon lasers eliminates some constraints of chip-to-chip alignment, but the optical coupling between the two media remains of importance for repeatable performances. First, we present a processing enhancement of the bonding oxide thickness uniformity across the wafer, improving the cross-section reproducibility. Next optimized tapering of the III-V/Si waveguides, offering a design agnostic to the number of quantum wells, will be shown. Finally, the yield of III-V on Silicon tunable lasers was evaluated by mean of wafer level measurements, using a yield oriented tuning of each cavity, so that lasers characteristics can be fairly compared.

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Karim Hassan, Joan M. Ramirez, Valentin Ramez, Stéphane Malhouitre, Christophe Jany, Sylvain Guerber, Delphine Néel, Jean Decobert, and David Bitauld "On the yield assessment and improvement of III-V on silicon lasers", Proc. SPIE PC12007, Optical Interconnects XXII, PC120070D (5 March 2022); https://doi.org/10.1117/12.2616681

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