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20 March 2023 GaSb-based Interband cascade lasers grown onto silicon substrates
Laurent Cerutti, Daniel A. Díaz Thomas, Maëva Fagot, Audrey Gilbert, Gad Ndemengoye-Kombila, Jean-Baptiste Rodriguez, Alexei N. Baranov, Eric Tournié
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Proceedings Volume PC12415, Physics and Simulation of Optoelectronic Devices XXXI; PC124150C (2023) https://doi.org/10.1117/12.2652483
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
The successful development of mid-infrared (2-5µm) lasers monolithically integrated with Si-based photonics opens a door to realization of low-cost smart optical gas sensors for environmental monitoring and control of industrial processes. We will discuss our recent results on interband cascade lasers emitting between 3 and 4 µm grown on silicon substrates demonstrating high tolerance of these devices to threading dislocations. The high performance of the developed lasers makes them a good candidate for use as light sources in silicon photonics.
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Laurent Cerutti, Daniel A. Díaz Thomas, Maëva Fagot, Audrey Gilbert, Gad Ndemengoye-Kombila, Jean-Baptiste Rodriguez, Alexei N. Baranov, and Eric Tournié "GaSb-based Interband cascade lasers grown onto silicon substrates", Proc. SPIE PC12415, Physics and Simulation of Optoelectronic Devices XXXI, PC124150C (20 March 2023); https://doi.org/10.1117/12.2652483
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KEYWORDS
Semiconductor lasers
Silicon
Quantum cascade lasers
Quantum wells
Photonic integrated circuits
Process control
Gallium antimonide
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