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21 March 2023 Effect of boron incorporation on the luminescence and structural properties of B xAl yGa 1-x-yN/AlGaN MQWs for UV emitters
Thomas O'Connor, Vitaly Zubialevich, Praveen Kumar, Miryam Arredondo-Arechavala, Stefan Schulz, Peter Parbrook
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2648283
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
As we reduce the emission wavelength of III-Nitride materials, and delve deeper into the UV region, the struggle to keep the material at a high internal quantum efficiency escalates. A reduction in the quantum confined Stark effect and an improvement in strain engineering are just two of the challenges that wurtzite boron nitride (wz-BN) could play a key role in. In this presentation, we investigate the possibility of incorporating wz-BN into ternary and quaternary multiple quantum wells serving as the active region for UV emitters. This work was funded by Science Foundation Ireland (IPIC and PIADs.)
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Thomas O'Connor, Vitaly Zubialevich, Praveen Kumar, Miryam Arredondo-Arechavala, Stefan Schulz, and Peter Parbrook "Effect of boron incorporation on the luminescence and structural properties of B xAl yGa 1-x-yN/AlGaN MQWs for UV emitters", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2648283
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KEYWORDS
Boron
Luminescence
Ultraviolet radiation
Interfaces
Metalorganic chemical vapor deposition
Quantum wells
Sapphire
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