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4 October 2023 Bandgap engineered low-loss a-Si:H for efficient dielectric metasurfaces at visible frequencies
Younghwan Yang, Gwanho Yoon, Minkyung Kim, Dasol Lee, Junsuk Rho
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Proceedings Volume PC12646, Metamaterials, Metadevices, and Metasystems 2023; PC126460F (2023) https://doi.org/10.1117/12.2672557
Event: SPIE Nanoscience + Engineering, 2023, San Diego, California, United States
Abstract
Here, we introduce low-loss hydrogenated amorphous silicon (a-Si:H), whose bandgap is optimized to suppress their extinction coefficient at visible frequencies. The bandgap of a-Si:H has been manipulated by adjusting the deposition parameters of plasma-enhanced chemical vapor deposition. Low-loss a-Si:H have been applied for beam-steering metasurfaces at the entire visible spectrums. Beam steering metasurface has achieved measured efficiencies of 42%, 65%, and 75% at the wavelengths of 450, 532, and 635 nm, respectively.
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Younghwan Yang, Gwanho Yoon, Minkyung Kim, Dasol Lee, and Junsuk Rho "Bandgap engineered low-loss a-Si:H for efficient dielectric metasurfaces at visible frequencies", Proc. SPIE PC12646, Metamaterials, Metadevices, and Metasystems 2023, PC126460F (4 October 2023); https://doi.org/10.1117/12.2672557
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KEYWORDS
Dielectrics
Refractive index
Amorphous silicon
Chemical vapor deposition
Engineering
Incident light
Miniaturization
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