Sub-PW/(sr∙cm2) brightness, passively cooled microchip laser

Hwan Hong Lim; Takunori Taira

doi:10.1117/12.3002882

13 March 2024 Sub-PW/(sr∙cm²) brightness, passively cooled microchip laser

Hwan Hong Lim, Takunori Taira

Proceedings Volume PC12864, Solid State Lasers XXXIII: Technology and Devices; PC128640K (2024) https://doi.org/10.1117/12.3002882
Event: SPIE LASE, 2024, San Francisco, California, United States

Conference Poster

Abstract

We present a record brightness of 0.3 PW/(sr∙cm²) using a passively cooled Nd:YAG/Cr4+:YAG microchip laser at 10 Hz. It delivers a peak power of 26.4 MW, an energy of 10.5 mJ, a pulse duration of 398 ps, and a M2 value of 2.7. The achieved brightness, utilizing an unstable resonator and a Gaussian mirror with a maximal reflection of 60%, exceeds that of a conventional flat-flat resonator by over 20 times at the same peak power. This increase enables a 150 mm long-focusing air-breakdown and a 7-point air-breakdown, suitable for multi-point ignition and multi-point Laser Induced Breakdown Spectroscopy (LIBS).

Citation Download Citation

Hwan Hong Lim and Takunori Taira "Sub-PW/(sr∙cm²) brightness, passively cooled microchip laser", Proc. SPIE PC12864, Solid State Lasers XXXIII: Technology and Devices, PC128640K (13 March 2024); https://doi.org/10.1117/12.3002882

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