VECSEL technology: the semiconductor materials perspective

Mircea Guina

doi:10.1117/12.3008593

13 March 2024 VECSEL technology: the semiconductor materials perspective

Mircea Guina

Proceedings Volume PC12868, Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII; PC1286801 (2024) https://doi.org/10.1117/12.3008593
Event: SPIE LASE, 2024, San Francisco, California, United States

Abstract

The development of VECSELs and many of their unique features are governed by the ability to customize the compound semiconductor heterostructures providing the gain. The progress in developing VECSELs is discussed in connection with the pefforts made to develop gain structures based on GaN, GaAs, InP, and GaSb compound semiconductor systems.

Conference Presentation

Citation Download Citation

Mircea Guina "VECSEL technology: the semiconductor materials perspective", Proc. SPIE PC12868, Vertical External Cavity Surface Emitting Lasers (VECSELs) XIII, PC1286801 (13 March 2024); https://doi.org/10.1117/12.3008593

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