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9 March 2024 Characteristics of group III-nitride films prepared by pulsed sputtering
Hiroshi Fujioka, Kohei Ueno
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Proceedings Volume PC12886, Gallium Nitride Materials and Devices XIX; PC1288603 (2024) https://doi.org/10.1117/12.3004962
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
The basic characteristics of group-III nitride films prepared by pulsed sputtering have been investigated. We have found that films prepared by sputtering shows high electron and hole mobilities. We have also found that Heavily donor-doped GaN and AlGaN showed record low resistivity. and were successfully applied to various devices such as the source/drain of AlN/AlGaN HEMTs and tunnel contacts for optical devices.
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Hiroshi Fujioka and Kohei Ueno "Characteristics of group III-nitride films prepared by pulsed sputtering", Proc. SPIE PC12886, Gallium Nitride Materials and Devices XIX, PC1288603 (9 March 2024); https://doi.org/10.1117/12.3004962
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KEYWORDS
Sputter deposition
Aluminum gallium nitride
Crystals
Field effect transistors
Gallium nitride
Optical components
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