Presentation
10 April 2024 MBMW's comprehensive requirements and roles for next EUV era and its mass production
Author Affiliations +
Abstract
Multibeam mask writers(MBMW) have been rapidly occupying on the field of leading edge EUV mask patterning for last several years. Thanks to outstanding ability of MBMW characteristics, sophisticated mask patterns and higher local pattern fidelity with low sensitivity E-beam resist can be realized in EUV era. Now most mask makers want to make good use of MBMW as a standard of making high-end grade masks such as Memory, Logic chips and etc. For this reason, they require higher pattern accuracy, faster writing time, higher data handling efficiency and matured machine stability aiming for the innovative mask making environment. Moreover, Larger coverage is needed as well not only for Low/High-NA EUV masks but also for even ARF masks. In this paper, we touch key items with regard to comprehensive requirements from the mass production's point of view, for the versatile machines, several works and challenges to overcome on MBMW will be discussed.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Inhwan Noh, Jongmun Park, Heebom Kim, Jin Choi, Sang-Hee Lee, Hojune Lee, Byung-Sup Ahn, and Youngsu Sung "MBMW's comprehensive requirements and roles for next EUV era and its mass production", Proc. SPIE PC12956, Novel Patterning Technologies 2024, PC1295605 (10 April 2024); https://doi.org/10.1117/12.3009572
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KEYWORDS
Extreme ultraviolet

Logic

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