Nanoplasmonic optical switch based on Ga-Si3N4-Ga waveguide

Wangshi Zhao; Zhaolin Lu

doi:10.1117/1.3595868

1 July 2011 Nanoplasmonic optical switch based on Ga-Si₃N₄-Ga waveguide

Wangshi Zhao, Zhaolin Lu

Author Affiliations +

Funded by: U.S. Army, National Science Foundation

Optical Engineering, Vol. 50, Issue 7, 074002 (July 2011). https://doi.org/10.1117/1.3595868

Abstract

In this paper, we propose an optical switch based on a metal-insulator-metal plasmonic waveguide with Si₃N₄ core sandwiched between two gallium (Ga) metal layers. Combining the unique structural phase transition property of gallium, within a total length of only 400 nm, an extinction ratio as high as 7.68 dB can be achieved in the proposed nanoplasmonic structure. The phase transition may be achieved by changing the temperature of the waveguide or by external light excitation.

©(2011) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Wangshi Zhao and Zhaolin Lu "Nanoplasmonic optical switch based on Ga-Si₃N₄-Ga waveguide," Optical Engineering 50(7), 074002 (1 July 2011). https://doi.org/10.1117/1.3595868

Published: 1 July 2011

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