7 February 2017 Extended wavelength infrared photodetectors
Dilip Chauhan, A. G. Unil Perera, Lianhe Li, Li Chen, Suraj P. Khanna, Edmund H. Linfield
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Abstract
Extension of the wavelength threshold of an infrared detector beyond λt=hc/Δ is demonstrated, without reducing the minimum energy gap (Δ) of the material. Specifically, a photodetector designed with Δ=0.40  eV, and a corresponding λt=3.1  μm, was shown to have an extended threshold of 45  μm at 5.3 K, at zero bias. Under negative and positive applied bias, this range was further extended to 60 and 68  μm, respectively, with the photoresponse becoming stronger at increased biases, but the spectral threshold remained relatively constant. The observed wavelength extension arises from an offset between the two potential barriers in the device. Without the offset, another detector with Δ=0.30  eV showed a photoresponse with the expected wavelength threshold of 4  μm.
© 2017 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2016/$25.00 © 2016 SPIE
Dilip Chauhan, A. G. Unil Perera, Lianhe Li, Li Chen, Suraj P. Khanna, and Edmund H. Linfield "Extended wavelength infrared photodetectors," Optical Engineering 56(9), 091605 (7 February 2017). https://doi.org/10.1117/1.OE.56.9.091605
Received: 16 December 2016; Accepted: 25 January 2017; Published: 7 February 2017
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CITATIONS
Cited by 9 scholarly publications.
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KEYWORDS
Aluminum

Sensors

Gallium

Infrared radiation

Photodetectors

Infrared detectors

Infrared photography

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