We discuss the design and the optimization of interband cascade infrared photodetectors (ICIPs) based on type-II InAs/GaSb superlattices. Our study explores matched-absorbers configuration in ICIPs made up of multiple stages. An effective and enhanced computational approach is presented for determining the subsequent absorbers thicknesses in the matched-absorbers configuration. The first absorber thickness controls that of the following active layers, ensuring uniform quantum efficiency (QE) throughout all stages. Thus, we have demonstrated that selecting the initial absorber thickness is an important factor that can improve the performance of ICIP detectors. Furthermore, we have established that the accurate calculation of the subsequent absorber thicknesses leads to a significant high QE, with potential improvements of over 80% in certain cases.