Alessandro Barbato
at Univ degli Studi di Padova
SPIE Involvement:
Author
Publications (1)

Proceedings Article | 1 March 2019 Presentation + Paper
Proceedings Volume 10918, 1091817 (2019) https://doi.org/10.1117/12.2511145
KEYWORDS: Gallium nitride, Transistors, Reliability, Field effect transistors, Failure analysis, Diodes, Dielectrics, Diffusion, Physics, Microscopy

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