The ability to transparently switch optical signals from one fiber to another without conversion to the electrical domain is a basic functionality that has a wide range of applications within the fiber optic industry. The so-called 3D-MEMS architecture has emerged as the preferred approach for building transparent, scalable systems with port-counts ranging from 16x16 to 1024x1024. The primary components of the 3D-MEMS architecture are fiber array, lens array, and MEMS mirror array. While a central theme in the MEMS industry is integration, we adopted a strategy of modularization. The key MEMS components, which include mirror array, ceramic substrate, and high-voltage drivers, were manufactured separately and then combined to yield a working product. Central to our modular approach was critical design parameter tolerancing to ensure manufacturability. Results from a large sampling of MEMS components and MEMS assemblies are presented to highlight manufacturability and performance.
Interference lithography is an emerging technology that provides a means for achieving high resolution over large exposure areas with virtually unlimited depth of field. 1D and 2D arrays of deep submicron structures can be created using near i-line wavelengths and standard resist processing. In this paper, we report on recent advances in the development of this technology, focusing in particular, on how exposure latitude and resist profile scale with interference period. We present structure width vs. dose curves for periods ranging from 200 nm to 1.0 micrometers , demonstrating that deep submicron structures can be generated with exposure latitudes exceeding 30 percent. Our experimental results are compared to simulations based on PROLITH/2.
Breakdown in SiO2 is studied versus fluence using an intensified CCD spectrometer. Broad-band photoluminescence spectra were measured versus number of laser pulses. Before the breakdown of fused silica, the intensity of this photoluminescence increases. After breakdown, a plasma is formed and ablated Si emission lines are measured. The plasma is characterized by its emission spectra and excitation temperature temporal profiles. The temperature profiles of the plasma are calculated by the Bolzmann method. These data are studied to provide fundamental information of breakdown mechanisms in optical materials.
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