In this paper, we present the approach and results of resist profile aware source mask optimization (SMO). In this approach, the cost functions for optimization include the image properties calculated not only from the resist bottom image planes, but also from the top image planes. Consequently, the optimized source and mask shapes are a good balance between the process window for the bottom CD’s, and top CD control to ensure a straight resist profile favorable for the etching process. We built up the flow of resist profile aware SMO and implemented it on a 1× nm node back-end layer. Two best candidate sources, SMO1 and SMO2 were generated from the conventional SMO flow and the resist profile aware SMO flow, respectively. The simulation results indicate that a better resist profile is achieved by SMO2, although it gives rise to a relatively smaller overlapping process window evaluated at the resist bottom. Wafer data including bottom CD measurement for critical pattern clips and cross-sectional SEM images from selected patterns have shown good matching with the simulation results, indicating that resist-profile aware SMO is a feasible approach to optimize the illumination sources for a reasonable bottom CD based process window as well as favorable resist profiles.
OPC model stability is important at low k-1. Unstable OPC model leads to catastrophic OPC failures. For parametric OPC models, one of the major contributions to model instability is inadequate test pattern coverage over the parameter space where actual product designs reside. In this paper, we present a systematic approach to maximizing the coverage of existing test patterns. In this approach, the entire space over which all pattern variants reside is first approximated by varying the pattern dimensions in simple patterns. We call the generated parameter spaces reference domains. Next, regions in the parameter space that are sparsely covered are determined by overlaying parameter data points corresponding to existing test patterns over the reference domains. Systematically analyzing the characteristics of the reference domains, the required test patterns to maximize test pattern coverage can be inferred. Test pattern coverage is hence maximized. In this study, a parametric model with three parameters is considered.
In photolithography, alignment is a critical step prior to exposure of wafers in the scanner. When the alignment light strikes onto the wafer alignment marks, the backward diffracted waves are collected and analyzed as alignment signal. In this case, robustness of the marks is very important as it determines the quality of the signal. Poor alignment signal results in unacceptable overlay which requires rework of the wafers. Wafer alignment marks are usually grating on the substrates which are formed during different masking layers. In this paper, modeling of wafer alignment mark is performed using Geometrical Theory of Diffraction (GTD). The model is developed to investigate light scattering problem in alignment marks particularly at the sidewall. GTD can be extended and applied in such a study due to the existing of wave-like properties of the diffracted components. The main interest here is to find diffraction coefficient that can be fit into the model to determine the backward diffracted waves. With this, different arbitrary angle of the mark sidewall can be studied besides a perfect step grating. The results also look into different consequences of marks, such as grating depth.
An image formation technique based on the Geometrical Theory of Diffraction was presented last conference. The technique is a scalar technique and is applicable to infinitely thin and perfectly conducting mask. We explore in this paper the extension of the technique to 1D Extreme Ultra-Violet(EUV) Lithography mask, taking into consideration both the material property and the topography of the mask. Vectorial nature of light is incorporated in the treatment. Results obtained are promising and encouraging. Computation time
is relatively much shorter and the technique could simulate irradiance profile for any illumination angle. The technique is simple and elegant and lends understanding to image formation. We conclude that the asymmetry-through-focus characteristic usually found in EUV and Phase Mask imaging is an imaging phenomenon. We
also conclude that corrections for proximity effect and pattern infidelity will be needed when EUV Lithography is introduced at the 32 nm node, assuming a system NA of 0.25. Lastly, for a partially coherent illumination, it appears necessary to compute the irradiance corresponding to each illumination point individually.
With increasing use of OPC, there is a need to understand image formation better. The widely used Hopkin's model gives believable results but yields little insight into image formation. We present in this paper a new image formation technique based on the Geometrical Theory of Diffraction (GTD). Using GTD, we obtained a relationship between the edge on the mask and the disturbance in image space. We call this disturbance the Diffraction Edge Response (DER). Heuristically, the strength of the DER must drop nearing the end of an edge. The DER is thus modulated by a certain function. At this point of the development, we could not derive an expression for this function. However, we postulate that the Modulation Function is the square root of the intensity of the edge segment. This postulate is justified by the excellent agreement with results obtained using existing simulation tool. Image formation is thus governed by the DER and the Modulation Function. If the new image formulation is separated into the cross and non-cross terms respectively, it is observed from simulations that the cross terms have values closed to zero at the feature boundary. This unique property, stemming from the nature of the DER, turns a non-linear problem into approximately a linear problem at the feature boundary. A host of problems could then be understood. Using this tool, we show how the behavior of a simple corner varies with NA, PC and its dimension. We also discuss the implications of this tool on current OPC strategy. We have assumed an aberration-free system and an infinitely-thin 2D mask in this development. It is possible to extend it to an aberrated system and to 3D-mask. That will be our work in the future.
This paper presents a systematic theoretical and simulation study on how scattering bar could impact lithographic performance in the presence of lens aberrations. In particular, the effects of bar size, bar placement and pitch at conventional and annular illuminations are investigated. For the study, a simple 1-D two-bar structure is used. The effects of odd and even aberration terms are studied assuming the presence of either primary coma or primary astigmatism only. Simulations using a set of 37 Zernike coefficients from a state-of-the-art DUV step and scan are also carried out. Pattern asymmetry of the two-bar pattern is used to quantify the effects of odd aberration terms; the root-mean-square value of CD difference through focus of two orthogonal lines is used to quantify the effects of even aberration terms. Results show that scattering bar has a significant impact on the effects of lens aberrations. The magnitude and polarity of this influence depends on the bar size, bar placement, pitch and illumination conditions. Pattern asymmetry under annular illumination is particular sensitive to bar size and bar placement; CD difference through focus under conventional illumination at a range of pitch values decrease significantly with proper bar placement. The trends observed are similar even when a full set of Zernike coefficients are used. A thorough and more complete understanding of how scattering bar impact lens aberration effect for different mask structures and at different illumination conditions is thus needed for low-k1 imaging.
Pattern fidelity has always been the key consideration in optical proximity corrections. However, it is equally important that overlap of underlying or overlying contact or via meets the requirements given in design rules. The normal OPC approach of minimizing the edge placement error with respect to the corresponding mask patterns may not give sufficient overlap over contact and via. A new OPC approach is proposed. The new approach considers tow parameters for optimization - edge placement errors of printed edge with respect to corresponding mask patterns, and overlap of the layer over contact and/or via. An evaluation is done by applying OPC, with normal approach and with the new OPC, to metal 1 of a 64M SRAM cell. Pattern fidelity of metal 1 and overlap of metal 1 over contact and via are compared. Results show that the new OPC approach gives both good pattern fidelity and improved overlap over contact and via. The only drawback is the significantly higher run time, due largely to the printing of resist images for overlap analysis.
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