Molybdenum disulpihde mono/few layers were deposited by pulsed laser deposition on graphene substrates thereby forming MoS2 - graphene van der Waal heterostructures. Initially, the optimization of the growth MoS2 layers were carried out on thermal oxide silicon (Si/SiO2) substrate by pulsed laser deposition technique. The difference between two Raman peaks A1g and E1/2g modes (▵ƒ) was used to determine the number of layers of the grown MoS2 thin films. The photoluminescence spectra with two excitonic peaks A and B confirmed the formation of mono/ few layered MoS2 thin films. Similar growth conditions were used to deposit MoS2 thin films on CVD grown graphene transferred on to thermally oxidized silicon substrate. The formation of MoS2 - graphene van der Waal heterostructures were confirmed using Raman analysis.
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