Polycrystalline lead selenide thin film has now emerged as a promising choice for low-cost and uncooled MWIR detectors and arrays operating at room temperature within the 3~5 µm wavelength range. LCDG (Laser Components Detector Groups) has successfully fabricated a new version of PbSe thin films using the chemical bath deposition (CBD) method on quartz substrates, enabling the development of infrared detectors and arrays with robust and high production yield. To achieve efficient activation of the PbSe thin film, LCDG investigates PbSe material from chemical reaction of the bath deposition to final packaging to meet various customer specifications and establishes PbSe detectors based on nano- and micro-particles embedded PbSe thin film, resulting in exceptional MWIR photoconductive response at room temperature. The characterization of PbSe thin film reveals the presence of various nanostructures, such as nano- and micro-particles as well as Pb-oxide phases and Pb-iodine phase carrier transporting channels. This paper reports the MWIR performance of the uncooled LCDG’s PbSe detector, focusing on responsivity, EQE, 1/f noise and FTIR spectral response (77K-340K), and D*.
This paper discusses the performance of a Silicon based avalanche photodiode, SAP500, that is able to operate in Geiger and linear mode. This detector is based on a ‘reach through’ structure for excellent quantum efficiency, extremely low bulk dark current and noise and can achieve high gains as they are designed for ultra-low light level applications.
KEYWORDS: Sensors, Photodetectors, Indium gallium arsenide, Dark current, Signal detection, Resistance, FT-IR spectroscopy, Absorption spectrum, Signal to noise ratio, PIN photodiodes, Short wave infrared radiation
In this paper we discuss the performance of a new generation of extended InGaAs photodetectors, the IG26H series, with a 2.6 μm wavelength cut off developed by the Laser Components Detector Group. These devices have a low leakage current over a wide range of applied reverse bias voltage and also have a high shunt resistance of 15 kOhms for 0 Volt bias applications. These photodetectors allow for the device operation up to 5 Volts reverse bias while maintaining low leakage of under 50 μAmp for a 1mm diameter active area detector thus assuring linearity of the operation of the detectors.
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