Dr. Ashwin Krishnan Rishinaramangalam Profile

Dr. Ashwin Krishnan Rishinaramangalam

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Publications (5)

Proceedings Article | 2 March 2020 Presentation + Paper

High brightness MOCVD-grown laser diodes using RPCVD tunnel junctions

Josh Brown, Satya Barik, Qian Gao, Brad Siskavich, Marie Wintrebert-Fouquet, Alanna Fernandes, Patrick Chen, Mahmoud Behzadirad, Ashwin Rishinaramangalam, Daniel Feezell, Ian Mann

Proceedings Volume 11262, 112620R (2020) https://doi.org/10.1117/12.2548261

KEYWORDS: Cladding, Doping, Resistance, Light emitting diodes, Magnesium, Gallium nitride, Absorption, Semiconductor lasers, Silicon, Refractive index

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Proceedings Article | 14 March 2018 Presentation

Fabrication of InGaN LEDs on flexible metal foils (Conference Presentation)

Vladimir Matias, Christopher Sheehan, Daniel Koleske, Brendan Gunning, Ashwin Rishinaramangalam, Daniel Feezell

Proceedings Volume 10554, 1055406 (2018) https://doi.org/10.1117/12.2294597

KEYWORDS: Patterned sapphire substrate, Silicon, Epitaxy, Deposition processes, Ion beams, Sapphire, Gallium nitride, Indium gallium nitride, Metals, Light emitting diodes

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Proceedings Article | 3 November 2016 Presentation

GaN nanowire tip for high aspect ratio nano-scale AFM metrology (Conference Presentation)

Mahmoud Behzadirad, Noel Dawson, Mohsen Nami, Ashwin Rishinaramangalam, Daniel Feezell, Tito Busani

Proceedings Volume 9927, 99270N (2016) https://doi.org/10.1117/12.2237892

KEYWORDS: Gallium nitride, Silicon, Metrology, Metalorganic chemical vapor deposition, Nanoparticles, Atomic force microscopy, Silicon carbide, Gold, Carbon, Nanowires

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Proceedings Article | 26 August 2015 Presentation + Paper

Ordered arrays of bottom-up III-nitride core-shell nanostructures

Ashwin Rishinaramangalam, Mohsen Nami, Benjamin Bryant, Rhett Eller, Darryl Shima, Michael Fairchild, Ganesh Balakrishnan, S. R. Brueck, Daniel Feezell

Proceedings Volume 9553, 955308 (2015) https://doi.org/10.1117/12.2191726

KEYWORDS: Gallium nitride, Nanostructures, Light emitting diodes, Metalorganic chemical vapor deposition, Quantum wells, Scanning electron microscopy, Crystals, Gallium, Indium gallium nitride, Nanowires

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Proceedings Article | 3 September 2009 Paper

Electronic transport in nanowires: from injection-limited to space-charge-limited behavior

F. Léonard, A. Talin, A. Katzenmeyer, B. Swartzentruber, S. Picraux, E. Toimil-Molares, J. Cederberg, X. Wang, S. Hersee, A. Rishinaramangalum

Proceedings Volume 7406, 74060G (2009) https://doi.org/10.1117/12.827495

KEYWORDS: Germanium, Semiconductors, Interfaces, Gallium nitride, Nanoparticles, Metals, Bismuth, Scanning electron microscopy, Gold, Nanowires

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