Dr. Beata Ściana Profile

Dr. Beata Ściana

at Wroclaw Univ of Technology

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 13 March 2024 Presentation

Presentation

Enhancement of quantum cascade laser intersubband transitions via coupling to resonant discrete photonic modes of subwavelength gratings

Marcin Motyka, Monika Mikulicz, Michal Rygala, Tristan Smolka, Mikolaj Janczak, Mikolaj Badura, Adriana Lozinska, Adriana Wolf, Monika Emmerling, Beata Sciana, Sven Höfling, Tomasz Czyszanowski, Grzegorz Sek

Proceedings Volume PC12906, PC129060K (2024) https://doi.org/10.1117/12.3001692

KEYWORDS: Quantum enhancement, Quantum cascade lasers, Optical gratings, Seaborgium, Infrared radiation, Signal attenuation, Resonators, Quantum technology applications, Quantum processing, Quantum optics applications

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Proceedings Article | 18 December 2018 Paper

Paper

Modification of angular photoresponse of InGaAsN-based photodiode with 3D woodpile structures

Lubos Suslik, Matej Goraus, Petra Urbancova, Beata Sciána, Wojciech Dawidowski, Marek Tłaczała

Proceedings Volume 10976, 109760X (2018) https://doi.org/10.1117/12.2518357

KEYWORDS: Photodiodes, Polymers, 3D metrology, Photoresist materials, Lithography, Diffraction, Photonics, Light emitting diodes, Scanning electron microscopy, Laser systems engineering

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Proceedings Article | 30 May 2017 Paper

Paper

Polymer based 3D photonic crystals applied on the surface of LEDs and photodiodes

Dušan Pudiš, Matej Goraus, Marek Tłaczała, Peter Gašo, Jaroslav Kováč, Wojciech Dawidowski, Daniel Jandura, Ľuboš Šušlik, Jana Ďurišová, Ivana Lettrichová, Beata Ściana

Proceedings Volume 10249, 102490S (2017) https://doi.org/10.1117/12.2265759

KEYWORDS: Lithography, Polymers, Organic light emitting diodes, Nanotechnology, Photonics, Light emitting diodes, Photonic crystals, Photodiodes, Optical properties, Optical lithography, Photonic crystal devices

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Proceedings Article | 25 July 2013 Paper

Paper

Characterisation of AP-MOVPE grown (Ga, In)(N, As) structures by Raman spectroscopy

Mikołaj Badura, Beata Ściana, Damian Radziewicz, Damian Pucicki, Katarzyna Bielak, Wojciech Dawidowski, Paulina Kamyczek, Ewa Płaczek-Popko, Marek Tłaczała

Proceedings Volume 8902, 89022Q (2013) https://doi.org/10.1117/12.2031297

KEYWORDS: Nitrogen, Raman spectroscopy, Gallium arsenide, Gallium, Phonons, Chemical species, Indium, Quantum wells, Visible radiation, Semiconductor materials

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Proceedings Article | 25 July 2013 Paper

Paper

Characterizations of GaInNAs/GaAs quantum wells

Katarzyna Bielak, Damian Pucicki, Beata Ściana, Damian Radziewicz, Wojciech Dawidowski, Mikolaj Badura, Robert Kudrawiec, Jarosław Serafińczuk, Marek Tłaczała

Proceedings Volume 8902, 89022R (2013) https://doi.org/10.1117/12.2031298

KEYWORDS: Quantum wells, Nitrogen, Indium, Gallium arsenide, Heterojunctions, Crystals, Semiconductors, Optical testing, Luminescence, X-ray diffraction

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Proceedings Article | 25 July 2013 Paper

Paper

Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells

Wojciech Dawidowski, Beata Ściana, Magdalena Latkowska, Damian Radziewicz, Damian Pucicki, Katarzyna Bielak, Mikołaj Badura, Marek Tłaczała

Proceedings Volume 8902, 89022G (2013) https://doi.org/10.1117/12.2031065

KEYWORDS: Quantum wells, Gallium arsenide, Annealing, Luminescence, Heterojunctions, Optical properties, Nitrogen, Chemical species, Indium, Indium gallium arsenide

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Proceedings Article | 25 July 2013 Paper

Paper

Surface passivation of MSM photodetectors made on GaAsN epitaxial layers

Iwona Zborowska-Lindert, Beata Ściana, Damian Pucicki, Damian Radziewicz, Marek Panek, Bogusław Boratyński, Andrzej Stafiniak, Maria Ramiączek-Krasowska, Marek Tłaczała

Proceedings Volume 8902, 89020I (2013) https://doi.org/10.1117/12.2031054

KEYWORDS: Photodetectors, Gallium arsenide, Aluminum nitride, Crystals, Nitrogen, Visible radiation, Epitaxy, Optical lithography, Chemical species, Absorption

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Proceedings Article | 25 July 2013 Paper

Paper

Influence of the AP MOVPE process parameters on properties of (In, Ga)(As, N)/ GaAs heterostructures for photovoltaic applications

Beata Ściana, Damian Radziewicz, Damian Pucicki, Jarosław Serafińczuk, Wojciech Dawidowski, Katarzyna Bielak, Mikołaj Badura, Łukasz Gelczuk, Marek Tłaczała, Magdalena Latkowska, Paulina Kamyczek, Jaroslav Kováč, Martin Florovič, Andrej Vincze

Proceedings Volume 8902, 89020J (2013) https://doi.org/10.1117/12.2031055

KEYWORDS: Quantum wells, Gallium arsenide, Nitrogen, Raman spectroscopy, Heterojunctions, Spectroscopy, Temperature metrology, Solar cells, Chemical species, Indium

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Proceedings Article | 25 July 2013 Paper

Paper

Investigation of deep-level defects in InGaAsN/GaAs 3xQWs structures grown by AP-MOVPE

Ł. Gelczuk, M. Dąbrowska-Szata, P. Kamyczek, E. Płaczek-Popko, K. Kopalko, B. Ściana, D. Pucicki, D. Radziewicz, M. Tłaczała

Proceedings Volume 8902, 89020F (2013) https://doi.org/10.1117/12.2030760

KEYWORDS: Gallium arsenide, Nitrogen, Quantum wells, Temperature metrology, Annealing, Crystals, Indium, Optical properties, Carbon, Spectroscopy

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Proceedings Article | 17 April 2001 Paper

Paper

Photoreflectance investigation of delta-doped MOVPE-grown AlxGa1-xAs layers

M. Nowaczyk-Utko, G. Sek, Jan Misiewicz, Beata Sciana, D. Radziewicz, Marek Tlaczala

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425441

KEYWORDS: Gallium arsenide, Fourier transforms, Aluminum, Silicon, Spectroscopy, Semiconductors, Doping, Vapor phase epitaxy, Tungsten, Solar energy

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Proceedings Article | 24 April 1995 Paper

Paper

Photoreflectance spectroscopy of metalorganic chemical vapor deposition (MOCVD)-grown GaAs and GaAs/GaAlAs structures

Jan Misiewicz, Krzysztof Jezierski, P. Sitarck, P. Markiewicz, Ryszard Korbutowicz, Marek Panek, Beata Sciana, Marek Tlaczala

Proceedings Volume 2397, (1995) https://doi.org/10.1117/12.206864

KEYWORDS: Gallium arsenide, Interfaces, Metalorganic chemical vapor deposition, Quantum wells, Etching, Heterojunctions, Spectroscopy, Zinc, Silicon, Modulation

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Showing 5 of 11 publications

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