An ultra-compact 1.31μm-emission photonic crystal (PC) nano-ridge laser directly grown on a silicon substrate without thick buffer layers achieves lasing with a cavity length as small as 50 μm at a remarkably low pumping threshold of 4.42 kW/cm2. This laser exhibits a lasing peak with side-mode suppression ratio of over 17 dB and a linewidth as narrow as 1.47 nm under 22.91 kW/cm2 pulsed pumping.
The silicon photonics platform is still missing a native source. Therefore, using a novel epitaxial process based on aspect ratio trapping and nano-ridge engineering we demonstrated an powerfull approach to fabricate GaAs-InGaAs lasers directly on a standard silicon substrate. In depth morphological and optical characterisation confirms the high quality of the material. We demonstrated lasing from DFB-type devices with etched gratings and with metal gratings. In the presentation we will also discuss the possibility for coupling to standard silicon waveguides and for extending the emission to longer wavelengths.
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