Dr. Bernard J. Roman Profile

Dr. Bernard J. Roman

Consultant at SUNY Poly SEMATECH

SPIE Involvement:

Author

Publications (25)

Proceedings Article | 21 March 2006 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 615411 (2006) https://doi.org/10.1117/12.659353

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 15 March 2006 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Nicoló Morgana, Bryan Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 6154, 61541D (2006) https://doi.org/10.1117/12.659390

KEYWORDS: Photomasks, Polarization, Etching, Plasma etching, Manufacturing, Plasma, Semiconducting wafers, Chromium, Lithography, Chlorine

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Proceedings Article | 12 May 2005 Paper

The impact of mask topography on CD control

Jonathan Cobb, Bernard Roman, Vladimir Ivin, M. Sarychev

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601175

KEYWORDS: Reticles, Critical dimension metrology, Photomasks, Monte Carlo methods, Near field, Resolution enhancement technologies, Binary data, Phase shifts, Tellurium, Polarization

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Proceedings Article | 12 May 2005 Paper

The impact of illumination on feature fidelity for CPL mask technology

Jan Kuijten, Arjan Verhappen, Will Conley, Stephan van de Goor, Lloyd Litt, Wei Wu, Kevin Lucas, Bernie Roman, Bryan Kasprowicz, Chris Progler, Robert Socha, Doug van den Broeke, Kurt Wampler, Tom Laidig, Stephen Hsu

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.605481

KEYWORDS: Chromium, Photomasks, Nanoimprint lithography, Phase shifts, Resolution enhancement technologies, Optical proximity correction, Mask making, Semiconductors, Photoresist materials, Manufacturing

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Proceedings Article | 12 May 2005 Paper

Tunable transmission phase mask options for 65/45nm node gate and contact processing

Bryan Kasprowicz, Will Conley, Young-Mog Ham, Michael Cangemi, Nicolo Morgana, Marc Cangemi, Rand Cottle, Christopher Progler, Wei Wu, Lloyd Litt, Jonathan Cobb, Bernie Roman

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601011

KEYWORDS: Photomasks, Manufacturing, Etching, Plasma etching, Lithography, Chromium, Phase shifts, Reticles, Semiconducting wafers, Sputter deposition

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Proceedings Article | 12 May 2005 Paper

High transmission mask technology for 45nm node imaging

Will Conley, Mike Cangemi, Bryan Kasprowicz, Matt Lassiter, Lloyd Litt, Marc Cangemi, Rand Cottle, Mark Smith, Wei Wu, Jonathan Cobb, Rusty Carter, Young-mog Ham, Kevin Lucas, Bernie Roman, Chris Progler

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.601584

KEYWORDS: Photomasks, Image processing, Manufacturing, Image transmission, Lithography, Photoresist materials, Nanoimprint lithography, Image resolution, Semiconductors, 193nm lithography

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Proceedings Article | 20 August 2004 Paper

CPL reticle technology for advanced device applications

Willard Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Bernard Roman, Richard Peters, Colita Parker, J. Fung Chen, Kurt Wampler, Thomas Laidig, Erika Schaefer, Jan-Pieter Kuijten, Arjan Verhappen, Stephan van de Goor, Martin Chaplin, Bryan Kasprowicz, Christopher Progler, Emilien Robert, Philippe Thony, Michael Hathorn

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557802

KEYWORDS: Photomasks, Optical proximity correction, Image processing, Reticles, Resolution enhancement technologies, Phase shifts, Mask making, Scanning electron microscopy, Quartz, Binary data

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Proceedings Article | 20 August 2004 Paper

CPL mask technology for sub-100-nm contact hole imaging

Bryan Kasprowicz, Willard Conley, Lloyd Litt, Douglas Van Den Broeke, Patrick Montgomery, Robert Socha, Wei Wu, Kevin Lucas, Bernard Roman, J. Fung Chen, Kurt Wampler, Thomas Laidig, Christopher Progler, Michael Hathorn

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557755

KEYWORDS: Photomasks, Reticles, Manufacturing, Inspection, Lithography, Image processing, Semiconducting wafers, Quartz, Metrology, Optical lithography

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Proceedings Article | 28 May 2004 Paper

The impact of MEEF through pitch for 120-nm contact holes

Lloyd Litt, Wei Wu, Will Conley, Kevin Lucas, Bernard Roman, Patrick Montgomery, Bryan Kasprowicz, Christopher Progler, Robert Socha, Arjan Verhappen, Kurt Wampler, Erika Schaefer, Pat Cook, Jan-Pieter Kuijten, Wil Pijnenburg

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537437

KEYWORDS: Fiber optic illuminators, Atrial fibrillation, Critical dimension metrology, Resolution enhancement technologies, Photomasks, Semiconducting wafers, Manufacturing, Reticles, Nanoimprint lithography, Binary data

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Proceedings Article | 28 May 2004 Paper

Defect printability in CPL mask technology

Jan-Pieter Kuijten, Arjan Verhappen, Wil Pijnenburg, Will Conley, Lloyd Litt, Wei Wu, Patrick Montgomery, Bernard Roman, Bryan Kasprowicz, Christopher Progler, Robert Socha, Douglas Van Den Broeke, Erika Schaefer, Pat Cook

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537619

KEYWORDS: Photomasks, Resolution enhancement technologies, Reticles, Manufacturing, Scanning electron microscopy, Semiconductors, Phase shifts, Binary data, Lithography, Semiconducting wafers

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Proceedings Article | 28 May 2004 Paper

The application of CPL reticle technology for the 0.045-mm node

Will Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Bernard Roman, Richard Peters, Colita Parker, Fung Chen, Kurt Wampler, Thomas Laidig, Erika Schaefer, Jan-Pieter Kuijten, Arjan Verhappen, Stephan van de Goor, Martin Chaplin, Bryan Kasprowicz, Christopher Progler, Emilien Robert, Philippe Thony

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537613

KEYWORDS: Photomasks, Optical proximity correction, Reticles, Image processing, Resolution enhancement technologies, Phase shifts, Mask making, Scanning electron microscopy, Manufacturing, Quartz

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Proceedings Article | 26 June 2003 Paper

Process, design, and optical proximity correction requirements for the 65nm device generation

Kevin Lucas, Patrick Montgomery, Lloyd Litt, Will Conley, Sergei Postnikov, Wei Wu, Chi-Min Yuan, Marc Olivares, Kirk Strozewski, Russell Carter, James Vasek, David Smith, Eric Fanucchi, Vincent Wiaux, Geert Vandenberghe, Olivier Toublan, Arjan Verhappen, Jan Kuijten, Johannes van Wingerden, Bryan Kasprowicz, Jeffrey Tracy, Christopher Progler, Eugene Shiro, Igor Topouzov, Karl Wimmer, Bernard Roman

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485498

KEYWORDS: Reticles, Optical lithography, Optical proximity correction, Lithography, 193nm lithography, Scanners, Logic, Optical design, Lithographic illumination, SRAF

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Proceedings Article | 26 June 2003 Paper

Application of CPL reticle technology for the 65- and 50-nm node

Will Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Carla Nelson-Thomas, Bernard Roman, J. Fung Chen, Kurt Wampler, Thomas Laidig, Stephen Hsu, Erika Schaefer, Shawn Cassel, Linda Yu, Bryan Kasprowicz, Christopher Progler, John Petersen, David Gerold, Mark John Maslow

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485515

KEYWORDS: Photomasks, Reticles, Optical proximity correction, Image processing, Resolution enhancement technologies, Manufacturing, Phase shifts, Mask making, Quartz, Lithography

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Proceedings Article | 26 June 2003 Paper

Single-write self-aligned rim-phase-shift process

Cesar Garza, Wei Wu, Bernard Roman, Pawitter Mangat, Kevin Nordquist, William Dauksher

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485427

KEYWORDS: Phase shifts, Lithography, Photomasks, Optical lithography, Quartz, Inspection, Etching, Critical dimension metrology, Optical proximity correction, Manufacturing

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Proceedings Article | 30 July 2002 Paper

Development of a sub-100-nm integrated imaging system using chromeless phase-shifting imaging with very high NA KrF exposure and off-axis illumination

John Petersen, Will Conley, Bernard Roman, Lloyd Litt, Kevin Lucas, Wei Wu, Douglas Van Den Broeke, J. Fung Chen, Thomas Laidig, Kurt Wampler, David Gerold, Robert Socha, Judith van Praagh, Richard Droste

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474599

KEYWORDS: Diffraction, Phase shifts, Photomasks, Image processing, Halftones, Imaging systems, Transmittance, Opacity, Scattering, Photoresist materials

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Proceedings Article | 12 July 2002 Paper

Development of a sub-100nm integrated imaging system using chromeless phase-shifting imaging with very high NA KrF exposure and off-axis illumination

John Petersen, Will Conley, Bernard Roman, Lloyd Litt, Kevin Lucas, Wei Wu, Douglas Van Den Broeke, J. Fung Chen, Thomas Laidig, Kurt Wampler, David Gerold, Mark Maslow, Robert Socha, Judith van Praagh, Richard Droste

Proceedings Volume 4692, (2002) https://doi.org/10.1117/12.475692

KEYWORDS: Diffraction, Phase shifts, Photomasks, Image processing, Imaging systems, Opacity, Halftones, Tolerancing, Scattering, Lithography

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Examining features of varying pitch imaged using phase- shifting masks shows a pitch dependence eon the transmission best suited for optimum imaging. The reason for this deals with the relative magnitude of the zero and higher diffraction orders that are formed as the exposing wavelength passes through the plurality of zero and higher diffraction orders that are formed as the exposing wavelength passes through the plurality of zero and 180- degree phase-shifted regions. Subsequently, some of the diffraction orders are collected and projected to form the image of the object. chromeless Phase-Shift Lithography (CPL) deals with using half-toning structures to manipulate these relative magnitudes of these diffraction orders to ultimately construct the desired projected image. A key feature of CPL is that with the ability to manipulate the diffraction orders, a single weak phase-shifting mask can be made to emulate any weak phase-shifting mask and therefore the optimal imaging condition of any pattern can be placed on a single mask regardless of the type of weak phase- shifter that produces that result. In addition, these structures are used to render the plurality of size, shape and pitch such that the formed images produce their respective desired size and shape with sufficient image process tolerance. These images are typically made under identical exposure conditions, but not limited to single exposure condition. These half toning structures can be used exterior, as assist features, or interior to the primary feature. These structures can range in transmission from 0 percent to 100 percent and they can be phase-shifted relative to the primary features or not. Thus CPL deals with the design, layout, and utilization of transparent and semi- transparent phase-shift masks and their use in an integrated imaging solution of exposure tool, mask and the photoresist recording media. This paper describes the method of diffraction matching, provides an example and reviews some experimental data using high numerical aperture KrF exposure.

Proceedings Article | 14 September 2001 Paper

Ring test aberration determination and device lithography correlation

Cesar Garza, Will Conley, Bernard Roman, Mike Schippers, James Foster, Jan Baselmans, Kevin Cummings, Donis Flagello

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435749

KEYWORDS: Monochromatic aberrations, Scanners, Scanning electron microscopy, Transistors, Lithography, Semiconducting wafers, Deep ultraviolet, Critical dimension metrology, Semiconductors, Phase measurement

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Proceedings Article | 23 June 2000 Paper

Development of an i-line attenuated phase shift process for dual inlay interconnect lithography

John Sturtevant, Benjamin Ho, Vincent Geiszler, Matthew Herrick, Charles King, Russell Carter, Bernard Roman, Lloyd Litt, Brad Smith, Kirk Strozewski

Proceedings Volume 3999, (2000) https://doi.org/10.1117/12.388335

KEYWORDS: Photomasks, Phase shifts, Metals, Lithography, Optical lithography, Deep ultraviolet, Photoresist materials, Binary data, Dielectrics, Copper

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Proceedings Article | 2 June 2000 Paper

Re-evaluating simple lambda-based design rules for low-K1 lithography process control

Sergei Postnikov, Kevin Lucas, Bernard Roman, Karl Wimmer

Proceedings Volume 3998, (2000) https://doi.org/10.1117/12.386458

KEYWORDS: Optical proximity correction, Lithography, Process control, Optical lithography, Transistors, Semiconducting wafers, Printing, Manufacturing, Logic, Semiconductors

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Proceedings Article | 26 July 1999 Paper

Characterization of CD control for sub-0.18-um lithographic patterning

John Sturtevant, John Allgair, Chong-Cheng Fu, Kent Green, Robert Hershey, Michael Kling, Lloyd Litt, Kevin Lucas, Bernard Roman, Gary Seligman, Mike Schippers

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354335

KEYWORDS: Critical dimension metrology, Error analysis, Optical lithography, Semiconducting wafers, Reticles, Metrology, Deep ultraviolet, Lithography, Reflectivity, Resistance

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Proceedings Article | 26 July 1999 Paper

Practicing extension of 248-nm DUV optical lithography using trim-mask PSM

Michael Kling, Nigel Cave, Bradley Falch, Chong-Cheng Fu, Kent Green, Kevin Lucas, Bernard Roman, Alfred Reich, John Sturtevant, Ruiqi Tian, Drew Russell, Linard Karklin, Yao-Ting Wang

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354297

KEYWORDS: Photomasks, Binary data, Reticles, Deep ultraviolet, Optical proximity correction, Optical lithography, Optics manufacturing, Manufacturing, Etching, Phase shifts

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Proceedings Article | 29 June 1998 Paper

0.25-um logic manufacturability using practical 2D optical proximity correction

Michael Kling, Kevin Lucas, Alfred Reich, Bernard Roman, Harry Chuang, Percy Gilbert, Warren Grobman, Edward Travis, Paul Tsui, Tam Vuong, Jeff West

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310749

KEYWORDS: Optical proximity correction, Reticles, Metals, Inspection, Logic, Optical lithography, Calibration, Manufacturing, Etching, Lithium

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Proceedings Article | 7 July 1997 Paper

Plasma antireflective coating optimization using enhanced reflectivity modeling

Kevin Lucas, Jamie Vasquez, Ajay Jain, Stanley Filipiak, Tam Vuong, Charles King, Bernard Roman

Proceedings Volume 3050, (1997) https://doi.org/10.1117/12.275918

KEYWORDS: Reflectivity, Plasma, Optimization (mathematics), Dielectrics, Antireflective coatings, Optical lithography, Thin films, Optical properties, Critical dimension metrology, Lithography

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Proceedings Article | 7 July 1997 Paper

Full-field CD control for sub-0.20-um patterning

John Sturtevant, John Allgair, Mark Barrick, Chong-Cheng Fu, Kent Green, Robert Hershey, Lloyd Litt, John Maltabes, Carla Nelson-Thomas, Bernard Roman, John Singelyn

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276024

KEYWORDS: Critical dimension metrology, Deep ultraviolet, Optical lithography, Lithography, Resistance, Manufacturing, Logic

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