We present the fabrication and operation of GaN vacuum nanodiodes that operate in air and exhibit ultra-low turn-on voltage, high field emission current, excellent on-off ratio, and promising reliability and radiation hardness. Experimental and modeling results on the characteristics of these devices at various nanogap sizes, operating pressures, and radiation environments are discussed. Preliminary results on the fabrication and characteristics of lateral GaN nano vacuum transistors will also be shown. These results provide key new insights into the behavior and potential of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
We discuss the fabrication and operation of GaN nanogap vacuum nanoelectronic diodes that operate in air and exhibit ultra-low turn-on voltage, high field emission current, excellent on-off ratio, and promising reliability and radiation hardness. We present experimental and modeling results on the characteristics of these devices at various nanogap sizes, operating pressures, and radiation environments. Preliminary results on the fabrication and characteristics of lateral GaN nano vacuum transistors will also be presented. These results provide key new insights into the behavior and potential of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
AlGaN is a leading candidate for current and future ultra-wide bandgap electronic and optoelectronic applications. However, 3D etch technologies for AlGaInN remain immature compared to silicon, limiting its full potential for novel devices. Here, we build from the foundation of anisotropic KOH-based wet etchants used to fabricate GaN structures and explore AlGaN alloys etched in acids and bases. We investigate the etch reactivity of AlGaN alloys as a function of Al content in various etchants. We then explore the etch evolution of novel nanostructures observed and discuss possible mechanistic explanations. Lastly, we look at field emission properties of AlGaN alloys.
Solid-state, vacuum nanoelectronic devices have the potential to combine the advantages of vacuum electron devices, such as robustness in harsh environments and high frequency operation, and solid-state devices, such as size, integrability, and low-power operation. In this work, we demonstrate novel GaN nanogap field emission diodes that operate in air and exhibit ultra-low turn-on voltage, high field emission current, and excellent on-off ratio. We present experimental and modeling results on the field emission characteristics of these devices at various nanogap sizes and operating pressures. These results provide critical new insights into the behavior of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
Solid-state, vacuum nanoelectronic devices have the potential to combine the advantages of vacuum electron devices, such as robustness in harsh environments and high frequency operation, and solid-state devices, such as size, integrability, and low-power operation. In this work, we demonstrate novel GaN nanogap field emission diodes that operate in air and exhibit low turn-on voltage, high field emission current, and excellent on-off ratio. We present experimental and modeling results on the field emission characteristics of these devices at various nanogap sizes and operating pressures. These results provide critical new insights into the behavior of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.
We have developed an ion beam assisted deposition (IBAD) texturing process for biaxially aligned films as substrates for GaN epitaxy. The IBAD process enables low-cost, large-area flexible metal foil substrates to be used as potential alternatives to single-crystal sapphire and silicon for GaN electronic devices. Epitaxial GaN films are grown by the MOCVD process on these engineered flexible substrates. We have achieved epi GaN films of several microns on polycrystalline metal foils that have in-plane and out-of-plane alignment of less than 1° FWHM and typical threading dislocation densities of 4-8 x 10^8/cm^2.
We use the epitaxial GaN films on IBAD/polycrystalline metal foil as a template to deposit epitaxial multi-quantum well light emitting diode (LED) InGaN structures. From these layered structures we have successfully fabricated LED devices. These are the first LED devices fabricated directly on metal foil. We observe photoluminescence intensities from the LED structures up to 70% of those fabricated on sapphire. We will present data on performance of such devices and how these LED devices could be printed using a roll-to-roll process.
This work was supported by the Department of Energy ARPA-E agency.
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