Mr. Chin-Teong Lim Profile

Chin-Teong Lim

at GLOBALFOUNDRIES Dresden

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Author

Publications (11)

Proceedings Article | 29 October 2014 Paper

Short feedback loop for OPC model based on wafer level CD

Guoxiang Ning, Thomas Thaler, Kristian Schulz, Peter Philipp, Ute Buttgereit, Paul Ackmann, Lloyd Litt, Chin Teong Lim

Proceedings Volume 9235, 92351U (2014) https://doi.org/10.1117/12.2066169

KEYWORDS: Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Photomasks, Printing, Calibration, Feedback loops, Metrology, Scanning electron microscopy, Image processing

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Proceedings Article | 12 April 2013 Paper

Effects of focus difference of nested and isolated features for scanner proximity matching

GuoXiang Ning, Paul Ackmann, Huifeng Koh, Frank Richter, Matthias Ruhm, Jens Busch, Norman Chen, Karin Kurth , Andre Leschok, Chin Teong Lim

Proceedings Volume 8683, 86831R (2013) https://doi.org/10.1117/12.2011504

KEYWORDS: Scanners, Semiconducting wafers, Optical proximity correction, Critical dimension metrology, Metals, Reticles, Photomasks, Tolerancing, Calibration, Binary data

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Assuming that all exposure tools on which a certain production reticle is being used are from same type and configuration it can be expected that the performance of the reticle should be independent from the exposing machines. When planning or performing arrangements for process transfer between different production sites or capacity expansion within one site performing a proximity matching between different exposure tools is a common activity. One of the objectives of a robust optical proximity correction (OPC) model is to simulate the process variation. Normally, the wafer critical dimension (CD) calibration of an OPC model is applied for one specific scanner first. In order to enhance the tolerance of the OPC model so called fingerprints of different scanners should be matched as closely as possible. Some examples of features for fingerprint test patterns are “critical dimension through pitch” (CDTP), “inverse CDTP”, “tipto-tip” and “linearity patterns”, and CD difference of disposition structures. All of them should also be matched as tightly as possible in order to reduce the process variation and to strengthen the tolerance of an OPC model. However, the focus difference between nested and isolated features which is directly influenced by different exposure tools and reticle layers will have an effect on the proximity matching of some patterns such as inverse CDTP and uniformly distributed disposition structures. In this manuscript the effects of focus differences between nested and isolated features for scanner proximity matching will be demonstrated. Moreover, the results for several scanners and different mask layers using advanced binary mask blank material will also be investigated. Even if some parts of the proximity features are closely enough to each other different parity proximity patterns will be affected by the focus difference between dense and isolated features. Because the focus difference between isolated and dense features is dependent on the illumination conditions, different mask layers applied for a proximity correction will lead to different results. The effects of source variations causing isolated and dense feature focus differences between scanners for 28 nm poly, 1X metal and contact layers will be illustrated.

Proceedings Article | 8 November 2012 Paper

Reticle and Wafer CD Variation for Different Dummy Pattern

GuoXiang Ning, Christian Buergel, Paul Ackmann, Marc Staples, Thomas Thamm, Chin Teong Lim, Andre Leschok, Stefan Roling, Anthony Zhou, Fang Hong Gn, Frank Richter

Proceedings Volume 8522, 85222J (2012) https://doi.org/10.1117/12.964375

KEYWORDS: Reticles, Semiconducting wafers, Critical dimension metrology, Optical proximity correction, Metals, Manufacturing, Electron beams, Etching, Binary data, Neodymium

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Dummy pattern fill is added to a layout of a reticle for the purpose of raising the pattern-density of specific regions. The pattern-density has also an influence on different process-steps which were performed when manufacturing a reticle (e.g. proximity effect of electron beam exposure process, developer, and etch-processes). Although the reticle processes are set up to compensate the influence of the pattern density, dummy pattern can have an influence onto the reticle CD. When the isolated features become “nested” by insertion of dummy pattern, the reticle CD variation is even larger because nested features exacerbate the proximity effect of an electron beam. Another reason is that the etch ratio as well as the develop dynamics during the reticle manufacturing process are slightly dependent on the local pattern-density of pattern. With different dummy pattern around the main feature, the final reticle CD will be changed. Wafer CD of main feature is also dependant on the surrounding patterns which will induce different boundary conditions for wafer exposure.

We have investigated three manufacturing sites for a 28nm first-metal layer reticle. Two of them were manufactured with a comparable process using the same advanced reticle binary blank material. For the third site a different reticle blank material with a relatively thin absorber layer thickness was used which was made with a comparable reticle process. The optical proximity correction (OPC) test patterns were designed with two different dummy patterns. The CD differences of the three reticles will be demonstrated for different dummy pattern and will be discussed individually. All three reticles have been exposed and the respective wafer critical dimension through pitch (CDTP) and linearity performance is demonstrated. Also the line-end performance for two dimensional (2D) structures is shown for the three sites of the reticle. The wafer CD difference for CDTP, linearity, and 2D structures are also discussed.

Proceedings Article | 23 March 2011 Paper

Source and mask optimization applications in manufacturing

ChinTeong Lim, Vlad Temchenko, Ulrich Klostermann, Vitaliy Domnenko, Jens Schneider, Daniel Sarlette, Ingo Meusel, Dieter Kaiser, Ralf Ploss

Proceedings Volume 7973, 797322 (2011) https://doi.org/10.1117/12.879203

KEYWORDS: Optical proximity correction, Source mask optimization, Scanners, Lithography, Photomasks, Manufacturing, Photovoltaics, Fiber optic illuminators, Reticles, Resolution enhancement technologies

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Proceedings Article | 4 March 2010 Paper

Methods and challenges to extend existing dry 193nm medium NA lithography beyond 90nm

Jens Schneider, Andreas Greiner, ChinTeong Lim, Vlad Temchenko, Felix Braun, Dieter Kaiser, Tarja Hauck, Ingo Meusel, Dietrich Burmeister, Stephan Loehr, Susanne Volkland, Astrid Bauch, Hendrik Kirbach, Daniel Sarlette, Katrin Thiede

Proceedings Volume 7640, 76403G (2010) https://doi.org/10.1117/12.848207

KEYWORDS: Resolution enhancement technologies, Lithography, Optical proximity correction, Semiconducting wafers, Image processing, 193nm lithography, Chemical reactions, Scanners, Etching, Design for manufacturing

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Proceedings Article | 4 March 2010 Paper

Selective inverse lithography methodology

ChinTeong Lim, Vlad Temchenko, Martin Niehoff

Proceedings Volume 7640, 764034 (2010) https://doi.org/10.1117/12.845464

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Photovoltaics, Inspection, Manufacturing, Logic, 193nm lithography, Optical lithography, Reticles

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Proceedings Article | 16 March 2009 Paper

Manufacturability of ILT patterns in low-NA 193nm environment

ChinTeong Lim, Vlad Temchenko, Ingo Meusel, Dieter Kaiser, Jens Schneider, Martin Niehoff

Proceedings Volume 7274, 727439 (2009) https://doi.org/10.1117/12.814144

KEYWORDS: Photomasks, Optical proximity correction, Lithography, Resolution enhancement technologies, Manufacturing, Lithographic illumination, Semiconducting wafers, Logic, 193nm lithography, Silicon

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Proceedings Article | 1 April 2008 Paper

Coupled-dipole modelling for 3D mask simulation

Vlad Temchenko, Chinteong Lim, Dave Wallis, Jens Schneider, Martin Niehoff

Proceedings Volume 6924, 69240W (2008) https://doi.org/10.1117/12.772572

KEYWORDS: Photomasks, Finite-difference time-domain method, Near field, Optical proximity correction, Polarization, Interfaces, 3D modeling, Lithography, Computer simulations, Semiconducting wafers

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Proceedings Article | 7 March 2008 Paper

Consideration of VT5 etch-based OPC modeling

ChinTeong Lim, Vlad Temchenko, Dieter Kaiser, Ingo Meusel, Sebastian Schmidt, Jens Schneider, Martin Niehoff

Proceedings Volume 6924, 69243D (2008) https://doi.org/10.1117/12.772585

KEYWORDS: Etching, Optical proximity correction, Data modeling, Process modeling, Calibration, Optics manufacturing, Critical dimension metrology, Lithography, Photoresist processing, Design for manufacturing

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Proceedings Article | 27 March 2007 Paper

Investigation of DFM-lite ORC approach during OPC simulation

Chin Teong Lim, Kai Peter, Vlad Temchenko, Dave Wallis, Dieter Kaiser, Ingo Meusel, Sebastian Schmidt, Martin Niehoff

Proceedings Volume 6520, 65204E (2007) https://doi.org/10.1117/12.711395

KEYWORDS: Optical proximity correction, Polishing, Design for manufacturing, Image processing, Lithography, Computer simulations, Optics manufacturing, Photomasks, Design for manufacturability, Image quality

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Proceedings Article | 10 March 2006 Paper

Process influence study on optical model generation during model-based OPC development

ChinTeong Lim, Vlad Temchenko, Woong-Jae Chung, Dave Wallis, Robert Wildfeuer, Uta Mierau, Sebastian Schmidt, Martin Niehoff

Proceedings Volume 6155, 615503 (2006) https://doi.org/10.1117/12.655801

KEYWORDS: Data modeling, Calibration, Photoresist processing, Optical proximity correction, Process modeling, Optical calibration, Diffusion, Coherence (optics), Statistical modeling, Model-based design

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Showing 5 of 11 publications

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