Mr. Christian Ehrlich Profile

Christian Ehrlich

International Business Development Manager at Carl Zeiss SMT GmbH

SPIE Involvement:

Author

Publications (13)

Proceedings Article | 16 October 2017 Presentation

Addressing EUV masks registration challenges through closed loop correction (Conference Presentation)

Avi Cohen, Ofir Sharoni, Dirk Beyer, Christian Ehrlich

Proceedings Volume 10450, 104500E (2017) https://doi.org/10.1117/12.2281709

KEYWORDS: Extreme ultraviolet, Photomasks, Image registration, Manufacturing, Metrology, Extreme ultraviolet lithography, Overlay metrology, Image restoration, Lithography, Optical parametric oscillators

Read Abstract +

Addressing EUV masks registration challenges through closed loop correction Avi Cohen1, Ofir Sharoni1, Dirk Beyer2, Christian Ehrlich2 1Carl Zeiss SMS Ltd. Karmiel , Hadolev 3, 20156 Bar Lev Industrial Park, Israel 2Carl Zeiss SMT GmbH, Carl-Zeiss-Promenade 10, 07745 Jena, Germany ABSTRACT EUV lithography is expected to become a critical enabling technology in the short and mid future of high end IC manufacturing. Although much effort is going into process and manufacturing challenges and inroads are being made in the industry, some process residuals will still exist with the move to HVM and among them will be the mask registration errors and the on product overlay (OPO). The PROVE® system is the state of the art high end registration metrology tool capable of measuring both DUV as well as EUV masks. The ForTune® EUV utilizes an ultra short pulse laser to modify the mask substrate in order to correct registration errors and bring the mask into specification. Combining the metrology capabilities of the PROVE® with the corrective capabilities of the ForTune® EUV allows a closed loop solution in which the registration metrology data is utilized to feed forward the correction job needed to be applied over the mask in the ForTune® EUV. This paper investigates the ability to improve mask registration on EUV masks using closed loop feedback between the PROVE® and ForTune® systems. Initial registration data from an EUV mask is measured by the PROVE® and utilized to both calculate the mask tuning job as well as predict the improvement prior to actual procession. After carrying out the registration correction on the ForTune® EUV, the EUV mask is again measured on the PROVE® to evaluate the ForTune® EUV process The registration is measured with the PROVE® and the data is utilized by the Advanced Tuning Center, a FAVOR® solution, to prepare the job for the ForTune® EUV correction. KEYWORDS: EUV, ForTune®, PROVE®, EUV mask, overlay correction, registration correction,

Proceedings Article | 28 September 2017 Paper

SEM AutoAnalysis: enhancing photomask and NIL defect disposition and review

Kristian Schulz, Kokila Egodage, Gilles Tabbone, Christian Ehrlich, Anthony Garetto

Proceedings Volume 10446, 104460I (2017) https://doi.org/10.1117/12.2280828

KEYWORDS: Scanning electron microscopy, Photomasks, Nanoimprint lithography, Image analysis, Image processing, Image resolution

Read Abstract +

For defect disposition and repair verification regarding printability, AIMS™ is the state of the art measurement tool in industry. With its unique capability of capturing aerial images of photomasks it is the one method that comes closest to emulating the printing behaviour of a scanner. However for nanoimprint lithography (NIL) templates aerial images cannot be applied to evaluate the success of a repair process. Hence, for NIL defect dispositioning scanning, electron microscopy (SEM) imaging is the method of choice. In addition, it has been a standard imaging method for further root cause analysis of defects and defect review on optical photomasks which enables 2D or even 3D mask profiling at high resolutions. In recent years a trend observed in mask shops has been the automation of processes that traditionally were driven by operators. This of course has brought many advantages one of which is freeing cost intensive labour from conducting repetitive and tedious work. Furthermore, it reduces variability in processes due to different operator skill and experience levels which at the end contributes to eliminating the human factor. Taking these factors into consideration, one of the software based solutions available under the FAVOR® brand to support customer needs is the aerial image evaluation software, AIMS™ AutoAnalysis (AAA). It provides fully automated analysis of AIMS™ images and runs in parallel to measurements. This is enabled by its direct connection and communication with the AIMS™tools. As one of many positive outcomes, generating automated result reports is facilitated, standardizing the mask manufacturing workflow. Today, AAA has been successfully introduced into production at multiple customers and is supporting the workflow as described above. These trends indeed have triggered the demand for similar automation with respect to SEM measurements leading to the development of SEM AutoAnalysis (SAA). It aims towards a fully automated SEM image evaluation process utilizing a completely different algorithm due to the different nature of SEM images and aerial images. Both AAA and SAA are the building blocks towards an image evaluation suite in the mask shop industry.

Proceedings Article | 2 May 2008 Paper

Phase-shifting photomask repair and repair validation procedure for transparent and opaque defects relevant for the 45nm node and beyond

Christian Ehrlich, Ute Buttgereit, Klaus Boehm, Thomas Scheruebl, Klaus Edinger, Tristan Bret

Proceedings Volume 6792, 67920H (2008) https://doi.org/10.1117/12.798599

KEYWORDS: Photomasks, Phase shifts, Imaging systems, Electron beams, Opacity, Sensors, Bridges, Inspection, Visualization, Quartz

Read Abstract +

Proceedings Article | 30 October 2007 Paper

Integrated photomask defect printability check, mask repair, and repair validation procedure for phase-shifting masks for the 45-nm node and beyond

Christian Ehrlich, Ute Buttgereit, Klaus Boehm, Thomas Scheruebl, Klaus Edinger, Tristan Bret

Proceedings Volume 6730, 67301Z (2007) https://doi.org/10.1117/12.746666

KEYWORDS: Photomasks, Phase shifts, Electron beams, Imaging systems, Sensors, Phase measurement, Inspection, Opacity, Metrology

Read Abstract +

Proceedings Article | 21 June 2006 Paper

Recent application results from the novel e-beam-based mask repair system MeRiT MG

Christian Ehrlich, Klaus Edinger, Thorsten Hofmann, Wolfgang Degel

Proceedings Volume 6281, 62810M (2006) https://doi.org/10.1117/12.692647

KEYWORDS: Photomasks, Electron beams, Phase shifts, Magnesium, Binary data, Quartz, Imaging systems, Etching, Gemini Observatory, Inspection

Read Abstract +

Proceedings Article | 16 June 2005 Paper

Application data of the electron beam based photomask repair tool MeRiT MG

Christian Ehrlich, Klaus Edinger, Volker Boegli, Peter Kuschnerus

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637273

KEYWORDS: Photomasks, Binary data, Electron beams, Opacity, Chromium, Quartz, Etching, Signal processing, Image processing, Magnesium

Read Abstract +

Proceedings Article | 25 August 1999 Paper

Mask-writing system architecture and toolkit approach for 1G DRAM and beyond

Christian Ehrlich, Juergen Gramss, Hans-Joachim Doering

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360241

KEYWORDS: Photomasks, Lithography, Reticles, Electron beam lithography, Beam shaping, Manufacturing, Mask making, Metrology, Optical proximity correction, Semiconductors

Read Abstract +

Proceedings Article | 23 April 1999 Paper

Initial results from a Leica ZBA31H+ shaped E-beam mask writer located at the Photronics Advanced Mask Shop in Manchester, England

Stephen Johnson, Paul Marshall, Peter Osborne, Hans-Joachim Doering, Christian Ehrlich

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346229

KEYWORDS: Photomasks, Reticles, Laser applications, Optical proximity correction, Metrology, Edge roughness, Electron beam lithography, Photoresist processing, Plasma, Microsystems

Read Abstract +

Proceedings Article | 23 April 1999 Paper

Future reticle demand and next-generation lithography technologies

Uwe Behringer, Christian Ehrlich, Olaf Fortange

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346206

KEYWORDS: Photomasks, Lithography, Reticles, Semiconducting wafers, X-ray lithography, Semiconductors, X-rays, Silicon, Manufacturing, X-ray technology

Read Abstract +

Proceedings Article | 18 December 1998 Paper

Reticle writer for next-generation SEMI mask standard: mask handling and exposure

Christian Ehrlich

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332870

KEYWORDS: Photomasks, Reticles, Metrology, Standards development, Semiconductors, Mask making, Beam shaping, Overlay metrology, Optical proximity correction, Integrated circuits

Read Abstract +

Proceedings Article | 1 September 1998 Paper

Large-glass reticle writer: exposure strategy and mask handling

Christian Ehrlich, Juergen Gramss

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328804

KEYWORDS: Photomasks, Reticles, Glasses, Semiconductors, Optical proximity correction, Mask making, Beam shaping, Raster graphics, Control systems, Lithography

Read Abstract +

Proceedings Article | 12 February 1997 Paper

Advantages of variable-shaped e-beam writers for mask making

Christian Ehrlich

Proceedings Volume 3236, (1997) https://doi.org/10.1117/12.301188

KEYWORDS: Photomasks, Mask making, Optical proximity correction, Metrology, Electron beams, Beam shaping, Lithography, Reticles, Electron beam lithography, Glasses

Read Abstract +

Proceedings Article | 3 July 1995 Paper

ZBA31: an advanced mask writer meeting the demands of the 1-gigabit DRAM generation

Christian Ehrlich, Olaf Fortagne, Peter Hahmann

Proceedings Volume 2512, (1995) https://doi.org/10.1117/12.212769

KEYWORDS: Beam shaping, Vestigial sideband modulation, Photomasks, Software development, Edge roughness, Image quality, Motion measurement, Control systems, Electron beams, Interferometers

Read Abstract +

Showing 5 of 13 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years