For high precision beam steering usually complex and sophisticated mechanics are necessary to keep the alignment long term stable. Here we present a simple temperature controlled steering device based on a crystal with different temperature expansion coefficients in its axes. Results for single mode fiber coupling of visible lasers will be presented.
Optically Pumped Semiconductor Lasers - OPSLs - have been introduced in 2001. Their unique features
such as power scalability and wavelength flexibility, their excellent beam parameters, power stability and
reliability opened this pioneering technology access to a wide range of applications such as flow cytometry,
confocal microscopy, sequencing, medical diagnosis and therapy, semiconductor inspection, graphic arts,
forensic, metrology.
This talk will introduce the OPSL principles and compare them with ion, diode and standard solid state lasers.
It will revue the first 10 years of this exciting technology, its current state and trends. In particular currently
accessible wavelengths and power ranges, frequency doubling, ultra-narrow linewidth possibilities will be
discussed. A survey of key applications will be given.
Optically pumped semiconductor lasers are scalable up to several 10ths of Watts of output power, maintaining
excellent beam quality and high reliability. A further key advantage of the OPS technology is wavelength flexibility:
the accessible wavelength range spans from 915 nm to 1180 nm. Frequency doubling expands this into the blue to
yellow spectral range. The current investigation aims at applications (such as Raman spectroscopy) where ultra-narrow
bandwidth lasers are required. Results of a single frequency green-yellow OPS laser will be presented.
Diode pumped frequency doubled Optically Pumped Semiconductor lasers (OPS), has proven to be a reliable source
of laser radiation in the blue and blue-green spectral range between 460 nm and 505 nm. One of the major
advantages of using semiconductors as gain medium is the possibility to tailor the wavelength of the semiconductor
material by means of band gap engineering. Here we report about new OPS material enabling the wavelength region
between 1090 nm and 1160 nm which allows the realization of frequency doubled lasers between 545 nm and 580
nm. Laser results up to several Watts in the yellow spectral range as well as efficiency and lifetime data will be
presented.
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