Dr. Chuen-Huei Yang Profile

Dr. Chuen-Huei Yang

at United Microelectronics Corp

SPIE Involvement:

Author

Publications (21)

Proceedings Article | 12 June 2018 Paper

Paper

Achieve high hotspot detection accuracy by pattern scoring

Xiang Fang, Shou-Yuan Ma, Chien-Nan Lin, Hsu-Tang Liu, Chuan-Chun Lee, Chuen-Huei Yang, I-Y. Chang, Erwin Deng, Ming-Feng Shen, Min-Ying Lu, Ling-Chieh Lin, Hung-Yueh Liao, Elven Huang, Jonathan Muirhead

Proceedings Volume 10807, 108070L (2018) https://doi.org/10.1117/12.2323956

KEYWORDS: Design for manufacturing, Databases, Rule based systems, Semiconducting wafers, System identification, Visualization, Photomasks, Lutetium, Microelectronics, Design for manufacturability

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Proceedings Article | 13 July 2017 Paper

Paper

Cycle time reduction by Html report in mask checking flow

Jian-Cheng Chen, Min-Ying Lu, Xiang Fang, Ming-Feng Shen, Shou-Yuan Ma, Chuen-Huei Yang, Joe Tsai, Rachel Lee, Erwin Deng, Ling-Chieh Lin, Hung-Yueh Liao, Jenny Tsai, Amanda Bowhill, Hien Vu, Gordon Russell

Proceedings Volume 10454, 104540G (2017) https://doi.org/10.1117/12.2278691

KEYWORDS: Reticles, Databases

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Proceedings Article | 10 May 2016 Paper

Paper

Production mask composition checking flow

Shou-Yuan Ma, Chuen-Huei Yang, Joe Tsai, Alice Wang, Roger Lin, Rachel Lee, Erwin Deng, Ling-Chieh Lin, Hung-Yueh Liao, Jenny Tsai, Amanda Bowhill, Hien Vu, Gordon Russell

Proceedings Volume 9984, 99840D (2016) https://doi.org/10.1117/12.2240292

KEYWORDS: Photomasks, Semiconducting wafers, Reticles, Data conversion, Acquisition tracking and pointing, Neodymium, Radon, Databases, Visualization, Etching

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Proceedings Article | 9 July 2015 Paper

Paper

Strategy optimization for mask rule check in wafer fab

Chuen Huei Yang, Shaina Lin, Roger Lin, Alice Wang, Rachel Lee, Erwin Deng

Proceedings Volume 9658, 96580Y (2015) https://doi.org/10.1117/12.2192951

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, Optical lithography, Inspection, Double patterning technology, Distortion, Silicon, Communication engineering, Etching

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Proceedings Article | 13 March 2009 Paper

Paper

Implementing a framework to generate a unified OPC database from different EDA vendors for 45nm and beyond

Shady Abdelwahed, Mohamed Al-Iman, Rami Fathy, Nader Hindawy, Jochen Schacht, Regina Shen, Chia Wei Huang, Pei Ru Tsai, Te Hung Wu, Chuen Huei Yang

Proceedings Volume 7275, 72751O (2009) https://doi.org/10.1117/12.816281

KEYWORDS: Optical proximity correction, Electronic design automation, Photomasks, Semiconducting wafers, Data modeling, SRAF, Visualization, Wafer-level optics, Databases, Lithography

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Proceedings Article | 19 May 2008 Paper

Paper

Inspectability of PSM masks for the 32nm node using STARlight2+

Chain-Ting Huang, Yung-Feng Cheng, Shih-Ming Kuo, Chun-Hsien Huang, Swapnajit Chakravarty, Joe Huang, Jeff Lin, Den Wang

Proceedings Volume 7028, 70282P (2008) https://doi.org/10.1117/12.793095

KEYWORDS: Inspection, Reticles, Photomasks, Calibration, Reflectivity, Image processing, Contamination, Semiconducting wafers, Lithography, Manufacturing

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Proceedings Article | 14 March 2008 Paper

Paper

Multiphoton autofluorescence and second-harmonic generation diagnosis of hepatocellular carcinoma

Yuan Liu, Tzu-Lin Sun, Chuen-Huei Yang, Vladimir Hovhannisyan, Wei-Chou Lin, Hsuan-Shu Lee, Chen-Yuan Dong

Proceedings Volume 6863, 68630J (2008) https://doi.org/10.1117/12.764276

KEYWORDS: Second-harmonic generation, Multiphoton microscopy, Liver, Biopsy, Tissues, Tumors, Harmonic generation, Microscopes, Physics, Diagnostics

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Proceedings Article | 15 May 2007 Paper

Paper

Implementation of double dipole lithography for 45-nm node poly and diffusion layer manufacturing with 0.93NA

Meng-Hsiu Wu, Michael Hsu, Stephen Hsu, Bo-Jou Lu, Yung-Feng Cheng, Yueh-Lin Chou, Chuen-Huei Yang

Proceedings Volume 6607, 660731 (2007) https://doi.org/10.1117/12.729020

KEYWORDS: Photomasks, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Resolution enhancement technologies, Lithography, Manufacturing, Calibration, Data modeling, Printing

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The double dipole lithography (DDL) has been proven to be one of the resolution enhancement technologies for 45 nm node. In this paper, we have implemented a full-chip DDL process for 45nm node using ArF immersion lithography. Immersion exposure system can effectively enlarge the process DoF (depth of focus). Combining with dipole illumination can help us to reach smaller k1 value (~0.31) and meet the process requirements of poly and diffusion layers on 45nm node by using only 0.93 NA exposure tool. However, from a full-chip processing point of view, the more challenging question should be: how to calibrate a good model from two exposure and decompose original design to separate mask sets? Does the image performance achieve a production worthy standard? At 45nm node, we are using one-fourth of the exposure wavelength for the patterning; there is very little room for error. For DDL full-chip processing, we need a robust application strategy to ensure a very tight CD control. We implemented an integrated RET solution that combines DDL along with polarization, immersion system, and model based OPC to meet full-chip manufacturing requirement. This is to be a dual-exposure mask solution for 45nm node - X-dipole exposure for vertical mask and horizontal for Y-dipole. We show a process design flow starting from the design rule analysis, layout decomposition, model-based OPC, manufacturing reliability check, and then to the mask data preparation. All of the work has been implemented using MaskWeaver^TM geometry engine. Additionally, we investigated printability for through-pitch line features, ASIC logic, and SRAM cell design patterns. Different circuit layout needs dedicated special OPC treatment. To characterize the related process performance, we use mask enhancement error factor (MEEF), process window (PW), and critical dimension uniformity (CDU) to analyze the simulation data. Since we used the tri-tone Att-PSM, the mask making flow and spec was also taking into consideration. The device electrical performance was examined for production feasibility. We conclude that the DDL process is ready for 45nm node and is well within reach to be used on next generation production environment.

Proceedings Article | 27 March 2007 Paper

Paper

Feasibility Study of 45nm Metal Patterning with 0.93 NA

Yung Feng Cheng, Yueh Lin Chou, Ya Ching Hou, Bo Jou Lu, Chuen Huei Yang

Proceedings Volume 6520, 65204J (2007) https://doi.org/10.1117/12.711367

KEYWORDS: Polarization, Metals, Resolution enhancement technologies, Printing, Semiconducting wafers, Logic, Image processing, Optical lithography, Line width roughness, Image resolution

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Proceedings Article | 26 March 2007 Paper

Paper

SEM based data extraction for model calibration

Mohamed Al-Imam, H. Y. Liao, Jochen Schacht, George Bailey, Te Hung Wu, Chia Wei Huang, Sheng Yuan Huang, Pei Ru Tsai, Chuen Huei Yang

Proceedings Volume 6520, 65203B (2007) https://doi.org/10.1117/12.707353

KEYWORDS: Data modeling, Scanning electron microscopy, Calibration, Process modeling, Image processing, Optical proximity correction, Semiconducting wafers, Metrology, Resolution enhancement technologies, Feature extraction

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The model calibration process, in a resolution enhancement technique (RET) flow, is one of the most critical steps towards building an accurate OPC recipe. RET simulation platforms use models for predicting latent images in the wafer due to exposure of different design layouts. Accurate models can precisely capture the proximity effects for the lithographic process and help RET engineers build the proper recipes to obtain high yield. To calibrate OPC models, test geometries are created and exposed through the lithography environment that we want to model, and metrology data are collected for these geometries. This data is then used to tune or calibrate the model parameters. Metrology tools usually provide critical dimension (CD) data and not edge placement error (EPE - the displacement between the polygon and resist edge) data however model calibration requires EPE data for simulation. To work around this problem, only symmetrical geometries are used since, having this constraint, EPE can be easily extracted from CD measurements. In real designs, it is more likely to encounter asymmetrical structures as well as complex 2D structures that cannot easily be made symmetrical, especially when we talk about technology nodes for 65nm and beyond. The absence of 2D and asymmetric test structures in the calibration process would require models to interpolate or extrapolate the EPE's for these structures in a real design. In this paper we present an approach to extract the EPE information from both SEM images and contours extracted by the metrology tools for structures on test wafers, and directly use them in the calibration of a 55nm poly process. These new EPE structures would now mimic the complexity of real 2D designs. Each of these structures can be individually weighed according to the data variance. Model accuracy is then compared to the conventional method of calibration using symmetrical data only. The paper also illustrates the ability of the new flow to extract more accurate measurement out of wafer data that are more immune to errors compared to the conventional method.

Proceedings Article | 26 March 2007 Paper

Paper

Feasibility study of splitting pitch technology on 45-nm contact patterning with 0.93 NA

Yung Feng Cheng, Yueh Lin Chou, Ting Cheng Tseng, Bo Yun Hsueh, Chuen Huei Yang

Proceedings Volume 6520, 65202N (2007) https://doi.org/10.1117/12.711904

KEYWORDS: Printing, Semiconducting wafers, Logic, Optical lithography, Resolution enhancement technologies, Photomasks, Double patterning technology, Etching, Image processing, Atrial fibrillation

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Proceedings Article | 26 March 2007 Paper

Paper

The calibration of process window model for 55-nm node

Te Hung Wu, Sheng Yuan Huang, Chia Wei Huang, Pei Ru Tsai, Chuen Huei Yang, Irene Yi-Ju Su, Brad Falch

Proceedings Volume 6520, 65203A (2007) https://doi.org/10.1117/12.715496

KEYWORDS: Semiconducting wafers, Data modeling, Process modeling, Calibration, Optical proximity correction, Finite element methods, Sensors, Lithography, Tolerancing

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Proceedings Article | 21 March 2007 Paper

Paper

A systematic approach for capturing interconnects hot spots

Mohamed Al-Imam, H. Y. Liao, Jochen Schacht, Te Hung Wu, Chia Wei Huang, Shen Yuan Huang, Pei Ru Tsai, Chuen Huei Yang

Proceedings Volume 6521, 65211C (2007) https://doi.org/10.1117/12.713521

KEYWORDS: Semiconducting wafers, Photomasks, Image processing, Overlay metrology, Integrated circuits, Lithography, Resistance, Classification systems, Integrated circuit design, Transistors

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Proceedings Article | 15 March 2006 Paper

Paper

The investigation of 193nm CPL 3D topology mask effect on wafer process performance

Yung Feng Cheng, Yueh Lin Chou, Chuen Huei Yang

Proceedings Volume 6154, 61542D (2006) https://doi.org/10.1117/12.655165

KEYWORDS: Photomasks, Semiconducting wafers, Quartz, Printing, Critical dimension metrology, 3D metrology, Etching, 3D printing, Atomic force microscopy

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Proceedings Article | 15 March 2006 Paper

Paper

Improvement of OPC accuracy for 65nm node contact using KIF

Te Hung Wu, C. L. Lin, Ming Jui Chen, Zen Hsiang Tsai, Chen Yu Ao, H. C. Thuang, Jian Shin Liou, Chuen Huei Yang, Ling Chieh Lin

Proceedings Volume 6155, 61550M (2006) https://doi.org/10.1117/12.657900

KEYWORDS: Optical proximity correction, Data modeling, Scanners, Lithography, Photomasks, Projection systems, Optical calibration, Calibration, Lithographic illumination, Critical dimension metrology

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Proceedings Article | 9 November 2005 Paper

Paper

Inspection of integrated circuit database through reticle and wafer simulation: the lithography process window performance monitoring

Bo Su, Gaurav Verma, William Volk, Mohsen Ahmadian, Hong Du, Abhishek Vikram, Scott Andrews, Yung Feng Cheng, Yueh Lin Chou, Chuen Huei Yang, ChinLung Lin

Proceedings Volume 5992, 599244 (2005) https://doi.org/10.1117/12.633010

KEYWORDS: Inspection, Databases, Semiconducting wafers, Reticles, Scanning electron microscopy, Optical proximity correction, Calibration, Defect detection, Bridges, Data modeling

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Proceedings Article | 28 May 2004 Paper

Paper

Correlating reticle pinhole defects to wafer printability for the 90-nm node lithography using advanced RET

W. Shieh, William Chou, Chuen-Huei Yang, J. Wu, Noah Chen, Shih Yen, Tony Hsu, Steve Tuan, Doris Chang, Maciej Rudzinski, Lantian Wang, Kong Son

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.544243

KEYWORDS: Semiconducting wafers, Reticles, Inspection, Photomasks, Lithography, Wafer inspection, Resolution enhancement technologies, Scanning electron microscopy, Manufacturing, Critical dimension metrology

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Proceedings Article | 26 July 1999 Paper

Paper

Customized off-axis illumination aperture filtering for sub-0.18-um KrF lithography

Chin Hsia, Tsai-Sheng Gau, Chuen-Huei Yang, Ru-Gun Liu, ChungHsing Chang, Li-Jui Chen, Chien-Ming Wang, J. Fung Chen, Bruce Smith, Gue-Wuu Hwang, JiannWen Lay, Dong-Yuan Goang

Proceedings Volume 3679, (1999) https://doi.org/10.1117/12.354354

KEYWORDS: Optical proximity correction, Lithographic illumination, Optical filters, Resolution enhancement technologies, Electroluminescence, Lithography, Optical lithography, Photomasks, Modulation, Calcium

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Proceedings Article | 29 June 1998 Paper

Paper

Resist and oxide thickness effect on process window for 0.2-um contact patterns with off-axis illumination and attenuated phase-shift mask

Chuen-Huei Yang, Chang-Ming Dai

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310784

KEYWORDS: Etching, Oxides, Printing, Photomasks, Photoresist processing, Photography, Resolution enhancement technologies, Optical proximity correction, Polymers, Electronics

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Proceedings Article | 7 July 1997 Paper

Paper

Simulation and optimization of phase-shift masks for dense contact patterns with i-line illumination

Chuen-Huei Yang, Chang-Ming Dai

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276023

KEYWORDS: Photomasks, Phase shifts, Optical lithography, Lithography

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Proceedings Article | 6 June 1993 Paper

Paper

Output characteristics of high-pressure 585.3-nm atomic neon laser pumped by transverse discharge

Chuen-Huei Yang, Koji Itoh, Tomohiro Araki, Fumihiko Kannari, Minoru Obara

Proceedings Volume 1871, (1993) https://doi.org/10.1117/12.145240

KEYWORDS: Neon, Laser energy, Gold vapor lasers, Laser therapeutics, Luminescence, Photodynamic therapy, Capacitors, Hydrogen, Laser scattering, Dye lasers

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Showing 5 of 21 publications

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