Here, we explore the application of Mueller Matrix Spectroscopic Ellipsometry (MMSE) based scatterometry to determining the shape and dimensions of vertical nanowire gate-all-around (GAA) transistors. These transistors could be used in memory applications, like 4F2 3D NAND. The simulated sensitivity of MMSE based scatterometry to changes in the geometry of GAA transistor test structures was characterized at a critical etch back process step to define gate length. MMSE scatterometry simulations were done using rigorous coupled wave analysis (RCWA). We also searched for the optimum azimuthal measurement angle that increases the information available in off-diagonal Mueller matrix elements. A correlation study was done between the etch back height and nanowire diameter critical dimensions to determine if the Mueller matrix response could be isolated to changes in one parameter. The vertical GAA structure was shown to have an isotropic MMSE response at azimuthal measurement angles of 0, 45, and 90 degrees. The simulations show that MMSE scatterometry is sensitive to changes in the structure such as etch back thickness and diameter of the nanowire. These two parameters gave unique Mueller matrix responses, which can be monitored individually. In this simulation study, the nanowire structure was shown to have a differentiable Mueller matrix response for changes to key parameters.
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