Applying super-resolution imaging techniques to recover object behind scattering media can obtain more information. Our previous work stochastic optical scattering localization imaging breaks the diffraction-limit via object blinking. Here, we proposed a more practical method using speckle fluctuation to achieve super-resolution imaging. The speckle fluctuation in the illumination part cause object fluctuating, resulting in a series of speckle fluctuation frames in the camera. By analyzing the high order cumulants of deconvolution frames, not only the noise artifacts are suppressed but also resolution enhanced by a factor of square root of N , where N is the cumulant order.
A thermal emitter fabricated on complementary metal-oxide-semiconductor (CMOS)-compatible facilities is a key component for low-cost mid-infrared gas sensing. While conventional thermal emitters have broad spectrum and wide emission angle, which limit the sensing performance. In this work, a microelectromechanical system (MEMS)-based thermal emitter with photonic crystal has been designed and fabricated using CMOS-compatible technology. The photonic crystal enables the emission wavelength selectivity within mid-infrared regime. By engineering photonic crystal dimension, the emission enhancement wavelength can be matched to the fingerprint wavelength of chemical gas for efficient chemical gas sensing purpose.
Infrared imaging systems operating without cooling is a big challenge duo to the noise originated from the semiconductor materials used for the photodetectors in the imaging system. In this paper, we report significant enhancement of plasmonic structures to photodetection of midwave infrared radiation, which make the mid-wave imaging system possible for room temperature operation. By integrating a two-dimension metallic array with InAsSbbased heterojunction photodiode, the room temperature detectivity can be enhanced to about 1010 Jones with a response speed of around 600 ns. We also achieve a dual-band enhanced photodetection by integrating a hole array atop of a GaSb/InAsSb heterostructure. By making use of localized surface plasmons in semiconductors, we extend highsensitivity photodetection to millimetre and terahertz waves. A room-temperature noise equivalent power of about 10-13 WHz-1/2 is demonstrated. Our work on surface plasmon assisted infrared photodetection for room-temperature operation make future uncooled IR systems possible.
High density ultrahigh resolution patterning with desired shape and size is a crucial requirement in nanotechnology and its applications. Electron beam lithography (EBL) is the most widely used lithography tool for these applications. However, achieving cost-effective patterning with sub-10-nm critical dimension has been challenging due to the inherent tradeoff between resolution and throughput. In this paper, we present cost-effective new processes associated with EBL technique, which include optimized resist selection and processing as well as sonicated cold development process. Using this process, we demonstrate sub-10-nm diameter metal dots at a pitch of ~34 nm and sub-15 nm wide metal lines. Based on the same processes, we demonstrate the fabrication of u-shaped split ring resonator array of different metals with smallest fabricated resonator with ~60 nm size and v-shape SRRs with the smallest gap spacing of ~30 nm. By adjusting the SRR gap spacing through its arm length and opening angle, we have successfully demonstrated magnetic and electric resonances across the visible and ultraviolet range.
This paper presents results of computer simulation of 1D monolithic high refractive index contrast grating (MHCG) reflector also called surface grating reflector (SGR). We analyzed optical properties of the GaAs reflector designed for 980 nm wavelength with respect to the grating parameters variation. We also determined the electric field patterns after reflection from the structure in several cases of parameters variation. We show that thanks to the scalability and design simplicity, proposed design is a promising candidate for simple, next generation vertical cavity surface emitting lasers emitting from ultra-violet to infrared.
In this paper we present results of computer optical simulations of VCSEL with modified high refractive index contrast grating (HCG) as a top mirror. We consider the HCG of two different designs which determine the lateral aperture. Such HCG mirror provides selective guiding effect. We show that proper design of aperture of HCG results in almost sixfold increase in cavity Q-factor for zero order mode and a discrimination of higher order modes.
In this paper we present results of computer optical simulations of VCSEL with modified high refractive index contrast grating (HCG) as a top mirror. We consider the HCG of two different designs which determine the lateral aperture. Such HCG mirror provides selective guiding effect. We show that proper design of aperture of HCG results in almost sixfold increase in cavity Q-factor for zero order mode and a discrimination of higher order modes.
A subwavelength interference lithography method is numerically demonstrated based on surface plasmon polaritons excited by unidirectional couplers, and the unidirectional coupler is composed of a conventional nanoslit with a nanochannel excavated from one side of this nanoslit. Simulation results show that a feature size of 50 nm half-pitch pattern can be obtained at the working wavelength of 365 nm, and this method can enhance the intensity of the interference pattern with higher contrast and field depth and is advantageous to the fabrication process in practical applications.
Since Pendry's theoretical proposition of the perfect lens, extensive researches have been carried out in the field by a
number of groups and various lenses and structures have been reported. In this article, we present and discuss light
transmission in a vertical multilayered metal-dielectric structure and a metal chain array consisting of silver spheres with
different diameters. For the incident wavelength of 660 nm, light can transmit a longer distance in the vertical multilayer
structure due to low transmission loss. For the metal nanoparticle chain structure with an incident wavelength of 508 nm,
the output light intensity can be greatly enhanced by adding a small sphere to the input end and output end, respectively
as it is believed to enhance the coupling of the field into the structure and decoupling of the field from the structure,
respectively.
Gain-assisted surface plasmon polaritons (SPPs) propagation is realized by electrical pumping the InGaAsP quantum
wells (QWs) beneath the metal waveguide with asymmetric configuration. The long-range and short-range mode SPPs
are analyzed theoretically and observed experimentally under different levels of current injection. It is demonstrated that
among the complex SPP-coupled emission mechanisms, the short-range SPP is supported by stimulated amplification
(SA) in electrically-pumped QWs, and increases robustly to as 1.6 times of the long-range mode SPP in output power
over a travelling distance of 80μm. This stimulated SPP emission can be adopted for the minimization of the electrically
controlled optical modulator.
We present the 1.3-μm InAs quantum dot (QD) vertical cavity surface emitting lasers (VCSELs) with novel planar
electrodes configuration. The lasing wavelength is around 1274 nm. The lowest threshold current of wafer level device is
~1 mA, which corresponds to a low threshold current density of ~1.3 kA/cm2 or 76 A/cm2 per QD layer. The maximum
output power of 1 mW can be obtained at room temperature. High temperature stability can be seen in temperature
dependence L-I characteristics of InAs QD VCSEL 3-dB modulation frequency response of 1.7 GHz can be obtained in
the small signal response measurements.
Single damascene Cu lines using bi-layer Ta/TaN barrier with and without SiCN and plasma treatment for Cu-ultra low-k interconnect in 0.13μm technology have been investigated. It was found that the N2/H2 plasma treatment on the ULK surface before depositing barrier and Cu could reduce the line resistance significantly, but it also brought more surface defects on the sidewall and larger diffusion length. Compared with only Ta/TaN barrier layer structure, introduction of an additional SiCN layer could significantly improve the breakdown voltage, line to line leakage and thermal stability. This is because the thin SiCN layer not only effectively blocks diffusion of elements on both sides, but also significantly improves the mechanical property of the ultra low-k polymer.
N-type strained GaInAsP/InP multiple quantum well (MQW) structures have been grown successfully using all solid source molecular beam epitaxy (MBE) and the effects of doping density in the wells on the quality of the MQW structures have been investigated. In the high-resolution x-ray diffraction curves, well-defined sharp satellite peaks up to the 15th order can be observed, indicating a very high crystalline quality of the MQW structures. With increase of Si-doping concentration in the wells, the lattice mismatch increases. The FWHM of the zero-order peak also increases and fits a Logistic function well with the doping density. The period of the MQW structures is found to decrease and the intensity of the first-order satellite peak to decays exponentially. All the observations can be explained by the changes in lattice constant, interface defects, dopant diffusion and possibly growth rate, caused by high doping in the wells of the MQW structures.
Strained p-type In0.15Ga0.85As/Al0.33Ga0.67As quantum well infrared photodetectors (QWIPs) with different Be concentrations in their wells, which detect normal infrared incidence, were investigated. The QWIPs with a Be doping density of 1018 cm-3 in the wells show a cut-off wavelength of 7.9 μm and basically symmetric detectives of about 8 x 108 cm.Hz½/W at 600 Hz. By increasing the Be doping density in the wells to 2 x 1019 cm-3, the cut-off wavelength is blue-shifted to about 7.25 meV and the photoresponsivity and detectivity become asymmetric. The detectivity is increased to about 1.4 x 109 cm.Hz½/W at positive biases but significantly reduced at negative biases. The blue shift in the cut-off wavelength for the QWIP devices with heavy doping concentration in the wells is mainly due to the bandgap shrinkage and the increased well width while the asymmetric behavior in the photoresponsivity and detectivity is likely due to the inhomogenity resulting from dopant diffusion at high doping.
We report growth and characterization of the Si-doped GaInAsP, lattice-matched to GaAs substrate, grown by solid source molecular beam epitaxy using a valve phosphorous cracker cell. It is found that the electron concentration increases with the temperature of Si effusion cell until 1150 degree C and decreases as the Si-cell temperature is increased further, due to the amphoteric behavior of Si. The Hall mobility follows the same trend except it reaches the maximum at a lower temperature. The Raman results reveal that the GaP-like LO mode of the materials decreases and the InP-like LO mode increases with the Si-cell temperature. It indicates that the excess Si may occupy the P site rather than As sites for p-type conduction. In addition, it is also found that Si doping has no significant influence on the lattice mismatch and has surface roughness.
This paper repots the effect of a flash copper layer, sandwiched between a copper film deposited by metal-organic chemical vapor deposition (MOCVD) and a TaN barrier metal, on copper diffusion through TaN barrier to Si substrate. The structures studied include a Cu film deposited by MOCVD, a thin layer of flash Cu and a TaN barrier layer deposited by ionized metal plasma (IMP), and SiO2 grown on SI substrate. It is found that for the structure of CVD Cu/TaN/SiO2/ Si which has no flash Cu layer, the Cu could diffuse through the 25-nm thick barrier layer at an annealing temperature of 600 degrees C. However, by depositing a flash CU layer between the CVD Cu film and the TaN barrier, the Cu diffusion can be significantly reduced. In addition to Cu, the diffusion of Ta and oxygen, and the interaction between them at different temperatures are also examined. Our observations provide useful information on Cu moralization for deep sub-micron integrated circuits.
KEYWORDS: Copper, Silicon, Annealing, Metalorganic chemical vapor deposition, Crystals, Chemical vapor deposition, Resistance, Metals, Diffusion, Chemical species
We report the properties of the copper films deposited by metal-organic chemical vapor deposition (MOCVD) and the interaction between the copper film and its neighbor layer in the Cu/TaN/SiO2/Si structures upon annealing in a furnace in a nitrogen environment. It is found that the sheet resistance of the copper film slightly decreases as the annealing temperature increases up to 500 degrees C and the increases drastically with the further increase of the annealing temperature. From x-ray diffraction, both CuTa10O26 and TaSi2 can be observed in the MOCVD Cu/TaN/SiO2/Si structures at an annealing temperature of 600 degrees C, indicating an interact between the Cu film and the layer underneath. For the structures which have a deposited flash Cu layer between the CVD Cu film and TaN barrier, however, the TaSi2 cannot be observed. SIMS analysis indicates that the addition of the flash Cu layer also impacts Cu diffusion across the barrier metal due likely to the change in the crystallographic plane of the Cu films.
Quantum well IR photodetector (QWIP) which exhibits the dual wavelength response in region of 3-5 and 8-12 μm was demonstrated in one stack of double barrier quantum well (DBQW) structures. These dual-band photoresponse originate from intersubband absorption between bound-to-quasi-bound and bound-to-continuum states, respectively. The symmetric DBQW consists of two subsequence barriers on both sides of the well i.e. inner thin high barrier and outer thick low barrier. The inner barrier was designed to be thin enough to allow photocarriers in quasi-bound-state tunnel through and also to make the continuum-state occurs at the top of the outer barrier. Due to photoresponse from the transitions between bound-to-quasi-bound and bound-to-continuous states, the desired wavelength regions were tailored by the barrier height of both inner and outer carriers while the sensitivities of each band were designed by thickness of the inner barrier. The optimum structure was proposed by 14-band Hamiltonian including six p-like conduction band states. The absorption in TE and TM mode were separately derived and illustrated in each response wavelength for the optimum structure.
Amorphous silicon-carbon-nitrogen films prepared using the industry-used electron cyclotron resonance chemical vapor deposition technique at room temperature for photoconductive detectors are systematically investigate.d It is found that the film quality is sensitive to the preparation conditions. The deposition rate of the films is found to increase with the microwave power. It peaks at a ratio of silane to the mixture of silane, methane and nitrogen around 33 percent and at a radio frequency (RF) bias of 100 V. The otpical energy band-gap of the films increases monotonically with the gas ratio but decreases with RF bias. The conductivity of the materials is also found to vary with the preparation conditions. The change in the energy band-gap and conductivity is associated with the change in the incorporation of carbon and nitrogen. The wavelength in the range of 0.65 to 0.45 micron could be detected by controlling the deposition conditions.
We report the fabrication and characterization of the n-type InGaAlAs/InAlAs multiple quantum well structures, lattice- matched to InP, for the long wavelength IR detection. It is found that strong absorption resulted from the intersubband transition in the quaternary material is observable and the wavelength of the absorption varies with the well width while the barrier width is kept unchanged. Our experimental result are in good agreement with the theoretical estimation based on simple finite barrier model and can be confirmed by the photoluminescence data.
We report for the first time the effect of a Cu flash layer sandwiched between copper film and TaN barrier layer on the properties of copper films. The structures studied, including a Cu film deposited by Metal Organic Chemical Vapor Deposition (MOCVD), Cu flash layer and TaN barrier by ionized metal plasma (IMP) technique on Si substrate with SiO2, were fabricated in a three-in-one system supplied by Applied Materials and characterized by x-ray diffraction, atomic force microscopy, adhesion test and stress measurement. By depositing a Cu flash layer with IMP technique prior to the MOCVD deposition, the properties of the MOCVD Cu films can be significantly improved. The <111> oriented diffraction intensity of the Cu film is found to increase, while the intensity of other direction diffraction <200> to decrease as the thickness of the Cu flash layer is increased. The adhesion strength of the CVD Cu film to the flash layer and TaN barrier metal, determined by scratch test and pull tester, is enhanced as the Cu flash layer becomes thicker. The root mean square roughness and the grain size of CVD Cu film is found sensitive to the Cu flash layer and can be optimized by monitoring the deposition of the Cu flash layer. In addition to these, some other properties of the Cu film and the mechanism for the improvement in the properties are also discussed.
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