KEYWORDS: Phase shift keying, Optical components, Photodetectors, Phase modulation, Signal processing, Modulation, High power fiber amplifiers, Optical amplifiers, Phase measurement, Signal to noise ratio
We report high power phase locked fiber amplifier array using the Self-Synchronous Locking of Optical Coherence by
Single-detector Electronic-frequency Tagging technique. We report the first experimental results for a five element
amplifier array with a total locked power of more than 725-W. We will report on experimental measurements of the
phase fluctuations versus time when the control loop is closed. The rms phase error was measured to be λ/60. Recent
results will be reported. To the best of the authors' knowledge this is the highest fiber laser power to be coherently
combined.
We report high power phase locked fiber amplifier array using the Self-Synchronous Locking of Optical Coherence by
Single-detector Electronic-frequency Tagging technique. We report the first experimental results for a five element
amplifier array with a total locked power of more than 725-W. We will report on experimental measurements of the
phase fluctuations versus time when the control loop is closed. The rms phase error was measured to be λ/60. Recent
results will be reported. To the best of the authors' knowledge this is the highest fiber laser power to be coherently
combined.
The reliability, long-term performance and lifetime of high power diode arrays are important issues for pumping of solid state and fiber laser systems. Operation of high power arrays in these systems has resulted in greater degradation rates than the reported lifetime data. We report on lifetime testing of a commercial high power array using an automated diode array reliability experiment. This computer controlled setup operates the laser array 24 hours a day in a cyclical format of 10 minutes on and one minute off. The array currently being tested was operated for more than 2500 hours at which time it experienced a sudden drop in power. Analysis of the array and the data suggest that the micro channel coolers corroded and that a sudden plugging of one or more channels caused the failure.
Performance degradation and lifetimes of high power diode arrays are important issues for laser manufacturers and end users. To fully understand these issues long term testing and failure analysis of arrays is required. To perform this testing we have set up an automated lifetime experiment to examine the characteristics of high power arrays over time. Subsequent material analysis of the arrays will uncover failure mechanisms.
This paper will review Air Force Research Laboratory Directed Energy Directorate development programs which provide high-efficiency electric semiconductor diode lasers and diode pumped fiber lasers for a host of applications including free space communications, laser radar, illuminators, trackers and designators.
This paper presents a technique for determining carrier lifetimes which does not require a fast detector or rely on an experimentally complex implementation. The technique is based both on a measurement and a parallel calculation: (1) A Hakki- Paoli measurement of modal gain versus current density, g(J), and (2) A theoretical determination of the modal gain versus carrier sheet density, g(N). Once the gain relationships have been determined, the carrier sheet density, N, can be functionally related to the current density, J, and the lifetime determined. We demonstrate this method on two InGaAs single quantum well lasers. This method may prove particularly useful for carrier lifetime estimations in long-wavelength semiconductor lasers.
The linewidth enhancement factor, (alpha) , plays a key role in our ability to obtain spatially coherent output from high-power semiconductor lasers and amplifiers. To obtain (alpha) values, modal gain and carrier-induced refractive index change have been measured in broad-area quantum well epitaxial structures with various well depths, widths, and compositions as functions of current density.
Data from regrown-lens-train lasers are used to validate a computer program for their simulation. Curves of light output as a function of current have been calculated and compare well with experimental data taken for three lasers with widely varying geometries. The optimum reflectivity of the front facet of a laser with a high-reflectivity back facet is calculated, and the output power is about the same as was obtained for the double- facet output of the experimental laser with uncoated facets. The power loss due to the finite width of the lenses is estimated.
We have obtained high power single-lateral-mode operation in wide-stripe InGaAs/GaAs/A1GaAs semiconductor lasers using a monolithic unstable resonator (consisting of diverging elements incorporated above an asymmetric GRIN-SCH). The fabrication involves MOCVD regrowth after wet-chemical etching of lens-like patterns in a
GaAs layer above the active region. Pulsed output powers of 175 mW and 490 mW have been obtained in 170 p.m and 100 tm wide lasers respectively, with spatial coherence in the near-field exceeding 60%. We observe good lateral mode discrimination upto 3.5 times threshold in 100 .tm stripes with a round-trip magnification of 6.4.
Recent work has demonstrated high power, spatially coherent operation of on-the-chip unstable resonator diode lasers. The unstable resonators were fabricated in SQW-GRINSCH material using photolithography and a dry chemical etch technique. The unstable resonator design provides mode selectivity in broad area devices by suppressing higher order lateral modes. These devices demonstrated twice diffraction limited far fields with high average power and strong lateral coherence.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.