Dr. Denis P. Masson Profile

Dr. Denis P. Masson

Materials Scientist at Broadcom Inc

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Publications (10)

Proceedings Article | 19 April 2017 Presentation

20-junction photonic power converter performance under non-uniform illumination calculated by 3D distributed circuit model (Conference Presentation)

Sanmeet Chahal, Mathew Wilkins, Denis Masson, Simon Fafard, Christopher Valdivia, Karin Hinzer

Proceedings Volume 10099, 1009908 (2017) https://doi.org/10.1117/12.2252919

KEYWORDS: Mathematical modeling, Resistors, 3D modeling, Circuit switching, Photovoltaics, Instrument modeling, Performance modeling, Computer simulations, Solar cells, Optimization (mathematics)

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Proceedings Article | 14 March 2016 Paper

Advances with vertical epitaxial heterostructure architecture (VEHSA) phototransducers for optical to electrical power conversion efficiencies exceeding 50 percent

S. Fafard, F. Proulx, M. C. A. York, M. Wilkins, C. Valdivia, M. Bajcsy, D. Ban, A. Jaouad, B. Bouzazi, R. Arès, V. Aimez, K. Hinzer, D. Masson

Proceedings Volume 9743, 974304 (2016) https://doi.org/10.1117/12.2218486

KEYWORDS: Heterojunctions, Measurement devices, Temperature metrology, Quantum efficiency, Diodes, External quantum efficiency, Gallium arsenide, Absorption, Semiconductor lasers, Platinum

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Proceedings Article | 14 March 2016 Paper

Enhanced photocarrier extraction mechanisms in ultra-thin photovoltaic GaAs n/p junctions

Mark C. A. York, Francine Proulx, Denis Masson, Abdelatif Jaouad, Boussairi Bouzazi, Richard Arès, Vincent Aimez, Simon Fafard

Proceedings Volume 9743, 97430Y (2016) https://doi.org/10.1117/12.2212960

KEYWORDS: Photovoltaics, Gallium arsenide, Optoelectronic devices, Optoelectronics, Heterojunctions, TCAD, Instrument modeling, Quantum efficiency, Electroluminescent displays, Measurement devices, Indium gallium phosphide, Data modeling

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Proceedings Article | 14 March 2016 Paper

Performance impact of luminescent coupling on monolithic 12-junction phototransducers for 12 V photonic power systems

Matthew Wilkins, Christopher Valdivia, Sanmeet Chahal, Masanori Ishigaki, Denis Masson, Simon Fafard, Karin Hinzer

Proceedings Volume 9743, 97430W (2016) https://doi.org/10.1117/12.2213727

KEYWORDS: Photovoltaics, Gallium arsenide, Manufacturing, Quantum efficiency, Multijunction solar cells, Heterojunctions, Photonic devices, Indium gallium phosphide, Physics, Silicon carbide, Field effect transistors, Diodes

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Proceedings Article | 16 March 2015 Paper

Five-volt vertically-stacked, single-cell GaAs photonic power converter

Christopher Valdivia, Matthew Wilkins, Boussairi Bouzazi, Abdelatif Jaouad, Vincent Aimez, Richard Arès, Denis Masson, Simon Fafard, Karin Hinzer

Proceedings Volume 9358, 93580E (2015) https://doi.org/10.1117/12.2079824

KEYWORDS: External quantum efficiency, Gallium arsenide, Sensors, Absorption, Photons, Optical simulations, Image segmentation, Photovoltaics, Device simulation, Quantum efficiency

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Proceedings Article | 23 September 2010 Paper

High-efficiency commercial grade 1cm2 AlGaInP/GaAs/Ge solar cells with embedded InAs quantum dots for concentrator demonstration system

J. Wheeldon, C. Valdivia, D. Masson, F. Proulx, B. Riel, N. Puetz, E. Desfonds, S. Fafard, B. Rioux, A. SpringThorpe, R. Arès, V. Aimez, M. Armstrong, M. Swinton, J. Cook, F. Shepherd, T. Hall, K. Hinzer

Proceedings Volume 7750, 77502Q (2010) https://doi.org/10.1117/12.872890

KEYWORDS: Solar cells, Solar energy, Solar concentrators, Quantum dots, Quantum efficiency, Reliability, Absorption, Sun, Indium arsenide, Resistance

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Proceedings Article | 12 August 2008 Paper

Optimization of antireflection coating design for multijunction solar cells and concentrator systems

Christopher Valdivia, Eric Desfonds, Denis Masson, Simon Fafard, Andrew Carlson, John Cook, Trevor Hall, Karin Hinzer

Proceedings Volume 7099, 709915 (2008) https://doi.org/10.1117/12.807675

KEYWORDS: Solar cells, Antireflective coatings, Coating, Refractive index, Silicon, Solar concentrators, Absorption, Photovoltaics, Multijunction solar cells, Ultraviolet radiation

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Proceedings Article | 20 December 2004 Paper

Surface roughness and dislocation density in InP/InGaAs layers

Denis Masson, Sylvain Laframboise

Proceedings Volume 5577, (2004) https://doi.org/10.1117/12.567540

KEYWORDS: Indium gallium arsenide, Etching, Diodes, Surface roughness, PIN photodiodes, Semiconducting wafers, Interfaces, Sensors, Absorption, Inspection

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Proceedings Article | 15 December 2003 Paper

Thickness and composition monitoring of thin layers of InGaAs in InP/InGaAsP epitaxial growths using FESEM and integrated SIMS profiles

Denis Masson, Bedwyr Humphreys, Michael Robertson

Proceedings Volume 5260, (2003) https://doi.org/10.1117/12.543725

KEYWORDS: Arsenic, Indium gallium arsenide, Ions, Transmission electron microscopy, Etching, Process control, Doping, Statistical analysis, Inspection, Calibration

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A thin layer of INGaAs is the critical photo-absorbing layer in epitaxially grown layers used in the monolithic integration of active photodetectors and a passive mux/demux. This thin InGaAs active layer requires tight thickness control that is beyond the accuracy and reproducibility of conventional thickness measurement techniques such as a step-height profilometer. In order to address this issue, a technique using Field Emission Scanning Electron Microscopy (FESEM) combined with a chemical delineation etch (use to reveal thin layers) was developed. The etch used was dilute H₂SO₄:H₂O₂:H₂0 which will etch all ternaries and quaternaries but does not etch InP. The selectivity of this etch, between the ternary InGaAs material and the InP, was measured to be approximately 500:1. We found that using the FESEM technique provided a minimum measurable thickness of approximately 50 nm, with a precision of approximately 5 nm. The accuracy of our measurement was verified by TEM analysis on selected samples. We also found that SIMS data, obtained from an independent analytical laboratory and originally performed to monitor doping levels in the layers, could be used to monitor the thickness and/or the variations in composition of the thin InGaAs photo-absorbing layer. The key is to make use of the integrated SIMS peaks rather than the full-width-half-maximum (FWHM) of the peaks. For an InGaAs layer, the integrated arsenic SIMS signal varies with the layer thickness and the arsenic concentration. The variations in either of these, in different growth batches, can be detected by SIMS. We found that using integrated SIMS profiles gives a fully independent thickness and/or compositional control monitor to compare with our FESEM measurements and can be used as a trusted control fo the layer quality. This comes at no additional cost since in our case, SIMS profiles are required to monitor doping levels. In this paper, a correlation is shown between the thickness of a thin layer of InGaAs measured by FESEM and the integrated arsenic SIMS peaks from several independent epitaxial growths. Deviations from the norm are explained from small thickness or compositional changes as supported by FESEM and photo-luminescence measurements.

Proceedings Article | 25 September 1995 Paper

Photoinduced ejection of thermal and ballistic fragments from N20/Pt(111) and NH3/Pt(111)

Denis Masson, Eric Lanzendorf, Andrew Kummel

Proceedings Volume 2547, (1995) https://doi.org/10.1117/12.221477

KEYWORDS: Ions, Chemical species, Laser beam diagnostics, Molecules, Oxygen, Photolysis, Polarization, Electrons, Platinum, Sensors

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Showing 5 of 10 publications

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