Integrated tunable lasers based on the co-integration of InP-based SOAs with low-loss Si3N4 dielectric waveguides have emerged as promising solutions in applications where the control of light phase is fundamental. Μicrowave photonics, coherent communications and LIDARs are only some of the applications where sub-KHz linewidths have already been achieved. Nevertheless, the majority of these demonstrations are based on Si3N4 platforms featuring thicknesses lower than 300nm and providing modes with effective indices below 1.6 imposing a major restriction on the achievable FSR values and devices’ footprint. In this work, we present the design of Vernier ring-inspired reflectors based on an 800nm- thick Si3N4 platform providing a TE fundamental mode with an effective index close to 1.71 for a width of 800nm, a group index close to 2.08 at λ=1550nm wavelength, and propagation losses as low as 0.2dB/cm. The proposed thick- Si3N4 designs are based on a simple dual ring Vernier configuration achieving an experimental FSR near 38nm and a 15dB side-mode suppression. These results are in close agreement with the ones obtained theoretically through a detailed Transfer Matrix Formulation verifying the accuracy of the presented semi-analytical model. This simulation model is then employed for the prediction of the performance of more advanced structures such as triple cascaded and high-order Vernier Ring designs, towards extending the achievable FSR and SMSR metrics.
In this work, we present the design process and experimental evaluation of a 1×2 asymmetric power splitters based on the self-imaging principle that is applied on an ultra-low-loss 800nm thick Si3N4 platform. The asymmetry in the multimode interference region is induced by removing a rectangular piece from the edge of the coupler, prompting a disruption at the interference pattern and adjusting accordingly the splitting power ratio. The design of the MMIs operating in the 1500- 1600nm wavelength region was realized through 3D-FDTD calculation method and the experimental results agree with theory providing an error of 5% in splitting ratio and less than -0.6dB insertion losses.
The integration of optical sources in Si photonic transceivers has relied so far on externally coupled III-V laser dies within the assembly. These hybrid approaches are however complex and expensive, as there are additional cost-increasing factors coming from the redundant testing of the pre- and post-coupled laser photonic chips. Further optimization of Photonic Integrated Circuits (PICs) cost and performance can be obtained only with radical technology advancements, such as the “holy grail” of Silicon Photonics; the monolithic integration of III-V sources on Si substrates. MOICANA project funded by EU Horizon 2020 framework targets to develop the technological background for the epitaxy of InP Quantum Dots directly on Si by Selective Area Growth with the best-in-class, in terms of losses and temperature sensitivity, in a CMOS fab, i.e. the SiN waveguide technology. In addition, MOICANA will develop the necessary interface for the seamless light transition between the III-V active and the SiN passive part of the circuitry featuring advanced multiplexing functionality and a combination of efficient and broadband fiber coupling. Through this unique platform, MOICANA aims to demonstrate low cost, inherent cooler-less and energy efficient transmitters, attributes stemming directly from the low loss SiN waveguide technology and the QD nature of the laser’s active region. MOICANA is targeting to exploit the advantages of the monolithic integrated PICs for the demonstration of large volume single-channel and WDM transmitter modules for data center interconnects, 5G mobile fronthaul and coherent communication applications.
Silicon photonics technology has demonstrated, over the years, Photonic Integrated Circuits (PICs) relying on Si or Si3N4 materials that feature advanced functionalities for a wide area of applications. However, the fabrication of such PICs is usually compatible only with Front-End-of-Line (FEOL) processes that render very difficult post processing of the involved chips towards providing efficient interfaces with optical sources. This is a major problem for the next generation photonic circuits that are expected to co-integrate III-V laser sources on the Si substrate in a monolithic way, as the coupling interface between the active and the passive part of the PIC should be developed after the epitaxy and the fabrication of the lasers. In this work, we report on the development of a novel Silicon Rich Nitride (SRN) material with low stress and high refractive index (n<3.16), close to that of InP and InGaAsP which are commonly utilized for the laser sources. The SRN has been characterized with spectroscopic ellipsometry and Fourier-Transform Infrared Spectroscopy for estimation of complex refractive index and hydrogen content in the film. Based on this material, a trilayer stack has been developed for the formation of waveguides compatible with the Back-End-of-Line (BEOL) processes, while propagation losses have been extracted through cut-back measurements. These experimental results were then inserted as input parameters in 2D- and 3D-FDTD simulations for the design of efficient interfaces between III-V lasers and Si3N4 waveguides providing coupling efficiencies that can reach 83.81% and back-reflections of 0.032%.
Silicon photonics technology has emerged as a viable solution for the demonstration of highly functional Photonic Integrated Circuits (PICs) relying on the mixture of light sources with silicon based waveguides. However, the incorporation of the laser sources in all PICs has always been at the center of industrial and research attention. To date, the vast majority of such merging schemes focus on either flip chip bonding of external III-V dies or hybrid-integration techniques that feature very good optical performance at the expense of fabrication cost. The next evolution of PICs, however will rely on the monolithic integration of the III-V lasers on the silicon substrates for simultaneous optimization of cost and circuit performance. In this work two low-loss coupling interface schemes are presented for efficient light transition between monolithically integrated InP-based laser sources and a Si3N4 passive circuitry through an intermediate waveguiding layer. For both coupling interface schemes, the light is butt-coupled from the III-V source into an intermediate waveguide that in turn couples the light into the final Si3N4 waveguide platform utilizing an evanescent coupling scheme. Two approaches are investigated towards this direction: The first approach is based on a purely stoichiometric Si3N4 waveguide, while the second one is based on a Si-Rich Nitride (SRN) acting as the intermediate layer. In both cases 2D-FDTD simulations verified by 3D-FDTD simulation results reveal total transition losses of less than 1.7dB for the pure-Si3N4 and less than 1dB for the SRN approach.
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