Dr. Dmitri Lubyshev Profile

Dr. Dmitri Lubyshev

Principal Scientist at IQE Inc

SPIE Involvement:

Author

Publications (25)

Proceedings Article | 15 June 2023 Presentation

Presentation

Recent progress in GaSb-based infrared photodetector epitaxy at IQE

Amy Liu, Dmitri Lubyshev, Scott Nelson, Michael Kattner, Phillip Frey, Joel Fastenau, Scott Cramb, Wayne Lewis, Will Black, Dennis Szymanski, Mark Furlong

Proceedings Volume 12534, 125340O (2023) https://doi.org/10.1117/12.2665015

KEYWORDS: Photodetectors, Epitaxy, Infrared radiation, Infrared photography, Quantum efficiency, Mid-IR, Silicon, Semiconducting wafers, Quantum wells, Mercury cadmium telluride

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Proceedings Article | 27 May 2022 Presentation + Paper

Presentation + Paper

Progress in MBE production of GaSb-based infrared photodetector epiwafers at IQE PA and NC facilities

Joel Fastenau, Dmitri Lubyshev, Seokjae Chung, Scott Nelson, Michael Kattner, Phillip Frey, Will Black, Xiao-Ming Fang, Dennis Szymanski, Amy W. Liu, Mark Furlong

Proceedings Volume 12107, 121070Z (2022) https://doi.org/10.1117/12.2620738

KEYWORDS: Semiconducting wafers, Mid-IR, Photodetectors, Quantum efficiency, Diodes, Sensors, Epitaxy, Process control

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Proceedings Article | 5 March 2022 Presentation

Presentation

Maturation of InP- and GaSb-based epitaxial technologies for photonics applications

Amy W. K. Liu, Jeng Shiuh Cheong, Joel Fastenau, Matthew Fetters, Phillip Frey, Manori Gunasekera, Michael Kattner, Hubert Krysiak, Dmitri Lubyshev, Mark Mattingley, Scott Nelson, Dennis Szymanski, Mark Furlong

Proceedings Volume PC12009, PC1200916 (2022) https://doi.org/10.1117/12.2622378

KEYWORDS: Photonics, Semiconducting wafers, Photonic devices, Manufacturing, Infrared detectors, X-ray diffraction, Vapor phase epitaxy, Sensors, Molecular beam epitaxy, Metalorganic chemical vapor deposition

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Proceedings Article | 28 April 2021 Presentation + Paper

Presentation + Paper

Self-aligned etching of subwavelength longwave infrared type-II superlattice pixels

N. Pfiester, S. Mills, J. Budhu, K.-K. Choi, C. Ball, S. Young, A. Grbic, D. Lubyshev, J. Fastenau, A. W. Liu, S. Krishna

Proceedings Volume 11741, 117410R (2021) https://doi.org/10.1117/12.2587766

KEYWORDS: Superlattices, Photodetectors, Long wavelength infrared, Dielectrics, Sensors, Polymer thin films, Indium arsenide, Etching, Thin films, Signal detection

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Proceedings Article | 12 April 2021 Presentation + Paper

Presentation + Paper

Volume MBE production trends for GaSb-based IR photodetector structures

Scott Nelson, Joel Fasteneau, Dmitri Lubyshev, Michael Kattner, Philip Frey, Amy W. Liu, Mark Furlong

Proceedings Volume 11741, 1174111 (2021) https://doi.org/10.1117/12.2591833

KEYWORDS: Photodetectors, Yield improvement, Quantum efficiency, Mid-IR, Manufacturing, Gallium antimonide, X-ray diffraction, Process control, Molecular beam epitaxy, Luminescence

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Proceedings Article | 19 May 2020 Presentation + Paper

Presentation + Paper

Large format multi-wafer production of LWIR photodetector structures on 150mm GaSb substrates by MBE

S. Nelson, J. Fastenau, D. Lubyshev, M. Kattner, P. Frey, A. W. Liu, B. Martinez, M. Furlong

Proceedings Volume 11407, 114070F (2020) https://doi.org/10.1117/12.2559403

KEYWORDS: Gallium antimonide, Semiconducting wafers, Long wavelength infrared, Photodetectors, Quantum efficiency, Epitaxy, Superlattices, Sensors, Mid-IR

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Proceedings Article | 9 September 2019 Presentation + Paper

Presentation + Paper

Temperature-dependent minority carrier lifetime in InAsSb nBn detectors on alternative substrates

Z. Taghipour, V. Dahiya, T. Grassman, J. Fastenau, A. W. Liu, D. Lubyshev, S. Krishna

Proceedings Volume 11129, 1112905 (2019) https://doi.org/10.1117/12.2529497

KEYWORDS: Gallium arsenide, Gallium antimonide, Photodetectors, Temperature metrology, Mid-IR, Infrared detectors

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Proceedings Article | 7 May 2019 Presentation + Paper

Presentation + Paper

T2SL mid- and long-wave infrared photodetector structures grown on (211)B and (311)A GaSb substrates

Dmitri Lubyshev, Joel Fastenau, Michael Kattner, Phillip Frey, Scott Nelson, Amy W. Liu, Becky Martinez, Mark Furlong

Proceedings Volume 11002, 110020N (2019) https://doi.org/10.1117/12.2521066

KEYWORDS: Long wavelength infrared, Quantum efficiency, Photodetectors, Gallium antimonide, Diodes, Mid-IR, Semiconducting wafers, Absorption

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Proceedings Article | 7 May 2019 Paper

Paper

GaSb-based infrared photodetector structures grown on Ge-Si substrates via metamorphic buffers

Joel Fastenau, Dmitri Lubyshev, Scott Nelson, Michael Kattner, Phillip Frey, Matt Fetters, Joe Zeng, Amy W. Liu, Aled Morgan, Stuart Edwards, Rich Dennis, Kim Beech, Doug Burrows, Kelly Patnaude, Ross Faska, Jason Bundas, Axel Reisinger, Mani Sundaram, Mark Furlong

Proceedings Volume 11002, 110020M (2019) https://doi.org/10.1117/12.2521055

KEYWORDS: Gallium antimonide, Gallium arsenide, Silicon, Photodetectors, Semiconducting wafers, Quantum efficiency, Germanium

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Proceedings Article | 8 May 2018 Paper

Paper

Room temperature operation of quantum cascade lasers monolithically integrated onto a lattice-mismatched substrate

R. Go, H. Krysiak, M. Fetters, P. Figueiredo, M. Suttinger, X. M. Fang, J. Fastenau, D. Lubyshev, A. W. Liu, A. Eisenbach, M. Furlong, A. Lyakh

Proceedings Volume 10639, 106392N (2018) https://doi.org/10.1117/12.2305045

KEYWORDS: Quantum cascade lasers, High reflection coatings, Gallium arsenide, Waveguides, Laser development, Semiconducting wafers, Reliability, Temperature metrology, Reflectivity

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Proceedings Article | 16 May 2017 Paper

Paper

MWIR barrier infrared detectors with greater than 5µm cutoff using bulk InAsSb grown on GaSb substrates

Neil Baril, Alexander Brown, Daniel Zuo, Meimei Tidrow, Dmitri Loubychev, Joel Fastenau, Amy W. Liu, Sumith Bandara

Proceedings Volume 10177, 101771L (2017) https://doi.org/10.1117/12.2262503

KEYWORDS: Mid-IR, Infrared detectors, Gallium antimonide, Infrared radiation, Group III-V semiconductors, Semiconductors, Infrared photography, Photodetectors, Antimony, Binary data, Indium arsenide, Sensors, Diffusion, Superlattices, Aluminum, Doping

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Proceedings Article | 16 May 2017 Presentation + Paper

Presentation + Paper

Large-format multi-wafer production of 5" GaSb-based photodetectors by molecular beam epitaxy

Dmitri Loubychev, Joel Fastenau, Michael Kattner, Phillip Frey, Amy W. Liu, Mark Furlong

Proceedings Volume 10177, 1017718 (2017) https://doi.org/10.1117/12.2263962

KEYWORDS: Gallium antimonide, Sensors, Photodetectors, Molecular beam epitaxy, Mid-IR, Semiconducting wafers, Diodes, Manufacturing, Quantum efficiency, Standards development

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Proceedings Article | 20 May 2016 Paper

Paper

A study of the preparation of epitaxy-ready polished surfaces of (100) Gallium Antimonide substrates demonstrating ultra-low surface defects for MBE growth

Rebecca Martinez, Marius Tybjerg, Patrick Flint, Joel Fastenau, Dmitri Lubyshev, Amy Liu, Mark Furlong

Proceedings Volume 9819, 981916 (2016) https://doi.org/10.1117/12.2225993

KEYWORDS: Gallium antimonide, Surface finishing, Polishing, Semiconducting wafers, Chemical mechanical planarization, Crystals, Oxides, Air contamination, Etching, Chemistry

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SPIE Journal Paper | 11 June 2015

High-temperature operation of interband cascade infrared photodetectors with cutoff wavelengths near 8 μm

Hossein Lotfi, Lin Lei, Lu Li, Rui Yang, Joel Keay, Matthew Johnson, Yueming Qiu, Dmitri Lubyshev, Joel Fastenau, Amy W. Liu

OE, Vol. 54, Issue 06, 063103, (June 2015) https://doi.org/10.1117/12.10.1117/1.OE.54.6.063103

KEYWORDS: Sensors, Semiconducting wafers, Stereolithography, Photodetectors, Diffusion, Infrared radiation, Infrared photography, Electroluminescence, Temperature metrology, Gallium antimonide

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Proceedings Article | 4 June 2015 Paper

Paper

MBE growth of Sb-based bulk nBn infrared photodetector structures on 6-inch GaSb substrates

Amy Liu, Dmitri Lubyshev, Yueming Qiu, Joel Fastenau, Ying Wu, Mark Furlong, Marius Tybjerg, Rebecca Martinez, Andrew Mowbray, Brian Smith

Proceedings Volume 9451, 94510T (2015) https://doi.org/10.1117/12.2178122

KEYWORDS: Gallium antimonide, Semiconducting wafers, Quantum efficiency, Photodetectors, Diodes, Sensors, Infrared radiation, Manufacturing, Infrared imaging, Mid-IR

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Proceedings Article | 8 February 2015 Paper

Paper

Long-wavelength interband cascade infrared photodetectors operating above room temperature

Hossein Lotfi, Lin Lei, Lu Li, Rui Yang, Joel Keay, Matthew Johnson, Yueming Qiu, Dmitri Lubyshev, Joel Fastenau, Amy W. Liu

Proceedings Volume 9370, 937032 (2015) https://doi.org/10.1117/12.2077844

KEYWORDS: Sensors, Semiconducting wafers, Stereolithography, Diffusion, Electroluminescence, Photodetectors, Temperature metrology, Long wavelength infrared, Infrared radiation, Infrared photography

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Proceedings Article | 11 June 2013 Paper

Paper

Multiwafer production of epitaxy-ready 4" GaSb: substrate performance assessments pre- and post-epitaxial growth

Mark Furlong, Rebecca Martinez, Sasson Amirhaghi, Andrew Mowbray, Brian Smith, Dmitri Lubyshev, Joel Fastenau, Amy W. Liu

Proceedings Volume 8704, 870411 (2013) https://doi.org/10.1117/12.2016681

KEYWORDS: Gallium antimonide, Semiconducting wafers, Crystals, Polishing, Surface finishing, Sensors, Oxides, Surface roughness, Etching, Ions

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Proceedings Article | 11 June 2013 Paper

Paper

MBE growth of Sb-based nBn photodetectors on large diameter GaAs substrates

Dmitri Lubyshev, Joel Fastenau, Yueming Qiu, Amy W. Liu, Edwin Koerperick, Jonathon Olesberg, Dennis Norton, Nikolai Faleev, Christiana Honsberg

Proceedings Volume 8704, 870412 (2013) https://doi.org/10.1117/12.2019039

KEYWORDS: Gallium antimonide, Gallium arsenide, Photodetectors, Laser sintering, Crystals, Sensors, Visualization, Diffraction, Mid-IR, Staring arrays

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Proceedings Article | 15 October 2012 Paper

Paper

Temperature-dependent minority carrier lifetimes of InAs/InAs[sub]1-x[/sub]Sb[sub]x[/sub] type-II superlattices

E. Steenbergen, B. Connelly, G. Metcalfe, H. Shen, M. Wraback, D. Lubyshev, Y. Qiu, J. Fastenau, A. W. Liu, S. Elhamri, O. Cellek, Y.-H. Zhang

Proceedings Volume 8512, 85120L (2012) https://doi.org/10.1117/12.930949

KEYWORDS: Stereolithography, Superlattices, Temperature metrology, Sensors, Long wavelength infrared, Astatine, Quantum efficiency, Infrared detectors, Electrons, Semiconductors

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Proceedings Article | 31 May 2012 Paper

Paper

100mm GaSb substrate manufacturing for IRFPA epi growth

Lisa Allen, J. Patrick Flint, Greg Meshew, Gordon Dallas, John Trevethan, Dmitri Lubyshev, Yueming Qiu, Joel Fastenau, Amy W. Liu

Proceedings Volume 8353, 835313 (2012) https://doi.org/10.1117/12.919287

KEYWORDS: Gallium antimonide, Semiconducting wafers, Manufacturing, Surface roughness, Crystals, Surface finishing, Sensors, Staring arrays, Oxides, Atomic force microscopy

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Proceedings Article | 21 January 2012 Paper

Paper

Manufacturable MBE growth process for Sb-based photodetector materials on large diameter substrates

Dmitri Lubyshev, Yueming Qiu, Joel Fastenau, Amy W. K. Liu, Edwin Koerperick, Jon Olesberg, Dennis Norton

Proceedings Volume 8268, 82681A (2012) https://doi.org/10.1117/12.909571

KEYWORDS: Semiconducting wafers, Laser sintering, Gallium antimonide, Sensors, Satellites, Photodetectors, Manufacturing, Infrared detectors, Atomic force microscopy, Stereolithography

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Proceedings Article | 21 January 2012 Paper

Paper

Study of the valence band offsets between InAs and InAs1-xSbx alloys

Elizabeth Steenbergen, Oray Cellek, Dmitri Lubyshev, Yueming Qiu, Joel Fastenau, Amy W. K. Liu, Yong-Hang Zhang

Proceedings Volume 8268, 82680K (2012) https://doi.org/10.1117/12.907101

KEYWORDS: Indium arsenide, Laser sintering, Stereolithography, Antimony, Gallium antimonide, Superlattices, Long wavelength infrared, Quantum wells, Luminescence, Mid-IR

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Proceedings Article | 21 May 2011 Paper

Paper

Development of interband cascade infrared photodetectors

Z. Tian, R. Yang, D. Lubyshev, Y. Qiu, J. Fastenau, W. Liu, J. Klem, M. Johnson

Proceedings Volume 8012, 80122U (2011) https://doi.org/10.1117/12.884216

KEYWORDS: Stereolithography, Mid-IR, Photodetectors, Infrared radiation, Infrared photography, Superlattices, Thermography, Doping, Infrared detectors, Heterojunctions

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Proceedings Article | 4 May 2010 Paper

Paper

Epitaxy ready 4" GaSb substrates: requirements for MBE grown type-II superlattice infrared detectors

Mark Furlong, Rebecca Martinez, Sasson Amirhaghi, Dmitri Loubychev, Joel Fastenau, Xing Gu, Amy W. Liu

Proceedings Volume 7660, 76601K (2010) https://doi.org/10.1117/12.850442

KEYWORDS: Gallium antimonide, Semiconducting wafers, Laser sintering, Crystals, Surface roughness, Oxides, Sensors, Superlattices, Etching, X-rays

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Proceedings Article | 4 May 2010 Paper

Paper

MBE growth of Sb-based type-II strained layer superlattice structures on multiwafer production reactors

Dmitri Lubyshev, Joel Fastenau, Xing Gu, Amy W. Liu, John Prineas, Edwin Koerperick, Jonathon Olesberg, Eric Jackson, Jill Nolde, Changhyun Yi, Edward Aifer

Proceedings Volume 7660, 76601J (2010) https://doi.org/10.1117/12.851053

KEYWORDS: Laser sintering, Semiconducting wafers, Gallium antimonide, Sensors, Indium arsenide, Satellites, Long wavelength infrared, Quantum efficiency, Antimony, Superlattices

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Showing 5 of 25 publications

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