The I-V and C-V–characteristics of the isotype Zn1-xCoxO/n-GaP heterojunction fabricated by spray pyrolysis of Zn1-xCoxO thin films on n-GaP crystalline substrates have been investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse currents and the conditions of generating reverse current are analyzed. The dynamics of changes in the capacitive parameters of Zn1-xCoxO thin film based on the C-V–characteristics is established. The photoelectric properties of the heterostructure are analyzed.
The transmission spectra of ZnO:Al films and I-V-characteristic of the isotype heterojunction ZnO:Al/n-Si fabricated by the method of RF magnetron sputtering of thin ZnO:Al films onto n-Si crystalline substrates were investigated and analyzed. The mechanisms of electron tunneling through the energy barrier of the heterojunction at forward and reverse biases are analyzed. The influence of temperature on the parameters of the heterojunction is determined. The photoelectric properties of the heterostructure are analyzed.
The results of investigation of optical and electrical properties of p-Cu2FeSnS4 thin polycrystalline films obtained by spray pyrolysis of aqueous solutions of salts of CuCl2∙2H2O, FeCl3∙6H2O and SnCl4∙5H2O and (NH2)2CS are presented. On the basis of the analysis of the light absorption spectra, the optical band gap of the films Eg ≈ 1.72 eV was determined and the dynamics of its change during thermal treatment under low vacuum conditions (0.1 Pa). The conductivity activation energies (Ea = 0.75 eV) and the height of the energy barriers between the grain boundaries (Eb = 0.07 eV) are determined from the temperature dependences of the electrical conductivity.
The results of investigation of optical and electrical properties of thin films of р-(3ZnTe)0.5(In2Te3)0.5 obtained by thermal evaporation and heterostructures based on them are presented in the paper. On the basis of the analysis of the spectra of light absorption, the optical width of the band gap and its dependence on the sputtering mode is determined. The heterostructures of n-Si/p-(3ZnTe)0.5(In2Te3)0.5 and n-CdTe/p-(3ZnTe)0.5(In2Te3)0.5 were obtained and they have straightening properties. Based on the analysis of the temperature dependences of the I-V characteristics, the presence of a tunneling mechanism of electron motion at forward and reverse bias through the energy barrier of the heterojunction is established.
The conditions for the production of rectifying heterostructures p-Сu2ZnSnSe4/n-CdTe by the method of RF-magnetron sputtering of Сu2ZnSnSe4 films onto crystalline substrates n-CdTe were investigated. Mechanisms of forming direct and reverse currents through the heterojunction were set based on the analysis of temperature dependences of I-V characteristics. It is established that the heterostructure generates idle voltage VOC = 0.42 V, short-circuit current ISC = 0.175 mA/cm2 and the fill factor FF = 0.4 when illuminated at 80 mW/cm2.
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