Dr. Donald Pettibone Profile

Dr. Donald Pettibone

Principal Engineer at KLA Corp

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Publications (11)

Proceedings Article | 6 December 2004 Paper

Defect printability and inspection of EUVL mask

Bing Lu, James Wasson, Pawitter Mangat, Jonathan Cobb, Scott Hector, Donald Pettibone, Donna O'Connell

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569318

KEYWORDS: Inspection, Photomasks, Defect inspection, Scanning electron microscopy, Extreme ultraviolet lithography, Extreme ultraviolet, Printing, Defect detection, Reflectivity, Multilayers

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Proceedings Article | 6 December 2004 Paper

Optical inspection of NGL masks

Donald Pettibone, Stanley Stokowski

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569366

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Charged-particle lithography, Lithography, Optical inspection, Image transmission, Semiconducting wafers, Reflectivity, Extreme ultraviolet lithography

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Proceedings Article | 6 December 2004 Paper

Inspection and repair issues for Step and Flash Imprint Lithography templates

Kevin Nordquist, William Dauksher, David Mancini, Douglas Resnick, Harald Hess, Donald Pettibone, David Adler, Kirk Bertsche, Roy White, Jeffrey Csuy, David Lee

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569846

KEYWORDS: Inspection, Scanning electron microscopy, Photomasks, Semiconducting wafers, Oxides, Lithography, Etching, Deep ultraviolet, Quartz, Atomic force microscopy

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Step and Flash Imprint Lithography (S-FIL) 1X templates must eventually achieve and maintain the very low defect counts commensurate to current production masks. This requires typically fewer than ten or even no defects over the entire field and to minimize template fabrication costs and techniques must be identified to repair defects on templates when they do occur. We describe inspection and repair methodologies and how it can be applied to the imprint template. For inspection, test patterns etched onto the template enable both a die-to-die comparison, to find nuisance defects, and also calibration of sensitivity to different types of preprogrammed defects. A state of the art deep UV photomask inspection system (KLA-Tencor model 526) can detect these events with about 70 nm threshold for imprint masks using reflection mode contrast. Initial scans are made at various stages of the imprint process: the processed mask, after dicing, and after several imprints. The scans show mostly isolated point defects at a density of ~ 10 to 100 per mm². To repair defects, studies were undertaken using RAVE’s nm650 tool which is essentially an AFM platform that relies upon a nano-machining technique for opaque defect removal. On S-FIL templates, the standard deviation for depth repairs in quartz from the target depth was found to be 3.1 nm (1σ). The spread in edge placement data for opaque line protrusions was 21.5 nm (1σ). Trench cuts through lines were successfully created with a minimum size of about 55nm. The repairs on the template were verified by imprinting the features on wafers. The range of depth offsets studied (-15 to +15) had no bearing on the imprinting process and the edge placement on wafers replicated the edge placement of the repaired templates. Trench cuts on the template were successfully filled with the imprint monomer and measured slightly larger than the minimum gap size. Finally, the imprinted wafers were used to pattern transfer features into 100nm of oxide.

Proceedings Article | 27 December 2002 Paper

Impact of EUV mask quality on optical inspection sensitivity

Donald Pettibone, Aditya Dayal, Stanley Stokowski

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467439

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Modulation, Reflectivity, Extreme ultraviolet lithography, Optical inspection, Autoregressive models, Glasses, Printing

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Proceedings Article | 27 December 2002 Paper

Integration of antireflection coatings on EUV absorber stacks

James Wasson, Sang-In Han, N. Edwards, Eric Weisbrod, William Dauksher, Pawitter Mangat, Donald Pettibone

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468104

KEYWORDS: Inspection, Reflectivity, Reticles, Etching, Extreme ultraviolet, Multilayers, Chromium, Extreme ultraviolet lithography, Antireflective coatings, Photomasks

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Proceedings Article | 1 July 2002 Paper

Inspection of EUV reticles

Donald Pettibone, Andrei Veldman, Ted Liang, Alan Stivers, Pawitter Mangat, Bing Lu, Scott Hector, James Wasson, Kenneth Blaedel, Emily Fisch, David Walker

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472311

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Reflectivity, Silicon, Deep ultraviolet, Reticles, Semiconducting wafers, Multilayers, Glasses

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Proceedings Article | 5 September 2001 Paper

Optical inspection of EUV and SCALPEL reticles

Donald Pettibone, Stanley Stokowski

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438384

KEYWORDS: Inspection, Photomasks, Deep ultraviolet, Ultraviolet radiation, Extreme ultraviolet, Reflectivity, Reticles, Charged-particle lithography, Optical inspection, Silicon

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Proceedings Article | 22 January 2001 Paper

UV inspection of EUV and SCALPEL reticles

Donald Pettibone, Noah Bareket, Ted Liang, Alan Stivers, Scott Hector, Pawitter Mangat, Douglas Resnick, Michael Lercel, Mark Lawliss, Christopher Magg, Anthony Novembre, Reginald Farrow

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410699

KEYWORDS: Photomasks, Inspection, Charged-particle lithography, Extreme ultraviolet, Reticles, Reflectivity, Semiconducting wafers, Silicon, Ultraviolet radiation, Chromium

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Proceedings Article | 19 July 2000 Paper

Next-generation lithography mask inspection

Noah Bareket, Steve Biellak, Donald Pettibone, Stanley Stokowski

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392104

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Particles, Lithography, Defect detection, Reflectivity, Semiconducting wafers, Glasses, Multilayers

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Proceedings Article | 25 August 1999 Paper

Reticle OPC defect printability and detectability for 180-nm technology

Maciej Rudzinski, Larry Zurbrick, Donald Pettibone, Mohan Ananth

Proceedings Volume 3748, (1999) https://doi.org/10.1117/12.360249

KEYWORDS: Semiconducting wafers, Reticles, Optical proximity correction, Inspection, Defect detection, Critical dimension metrology, Scanning electron microscopy, Photomasks, Deep ultraviolet, Databases

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Proceedings Article | 14 June 1999 Paper

Wafer printability simulation accuracy based on UV optical inspection images of reticle defects

Donald Pettibone, Mohan Ananth, Maciej Rudzinski, Sterling Watson, Larry Zurbrick, Hua-Yu Liu, Linard Karklin

Proceedings Volume 3677, (1999) https://doi.org/10.1117/12.350857

KEYWORDS: Reticles, Semiconducting wafers, Scanning electron microscopy, Optical inspection, Cadmium sulfide, Photomasks, Wafer-level optics, Inspection, 3D modeling, Manufacturing

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Showing 5 of 11 publications

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