Dr. Edita Tejnil Profile

Dr. Edita Tejnil

Distinguished Product Engineer at Siemens EDA

SPIE Involvement:

Conference Program Committee | Author

Publications (35)

Proceedings Article | 12 November 2024 Presentation + Paper

OPC and modeling solution to support 0.55NA EUV stitching

Qinglin Zeng, Dongbo Xu, Xuefeng Zeng, Werner Gillijns, Edita Tejnil, Yuyang Sun, Germain Fenger

Proceedings Volume 13215, 1321507 (2024) https://doi.org/10.1117/12.3034957

KEYWORDS: Optical proximity correction, Design, Extreme ultraviolet lithography, Semiconducting wafers, Data modeling, Scanners

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Proceedings Article | 10 April 2024 Presentation + Paper

OPC and modeling solution towards 0.55NA EUV stitching

Dongbo Xu, Werner Gillijns, Stewart Wu, Abdulrazaq Adams, Vincent Wiaux, Vicky Philipsen, Xima Zhang, Edita Tejnil, Germain Fenger

Proceedings Volume 12953, 129530K (2024) https://doi.org/10.1117/12.3010519

KEYWORDS: Optical proximity correction, Semiconducting wafers, Extreme ultraviolet lithography, Modeling, Scanners, Reticles

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Proceedings Article | 24 March 2017 Paper

Application of optical similarity in OPC model calibration

Edita Tejnil

Proceedings Volume 10147, 101471Q (2017) https://doi.org/10.1117/12.2258054

KEYWORDS: Calibration, Optical proximity correction, Data modeling, Wafer-level optics, Lithography, Computational lithography, Semiconducting wafers, Process modeling, Optical calibration, 3D modeling, Photomasks, Optical properties

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SPIE Journal Paper | 16 February 2016

Accurate, full-chip, three-dimensional electromagnetic field model for non-Manhattan mask corners

Michael Lam, Chris Clifford, Mike Oliver, David Fryer, Edita Tejnil, Kostas Adam

JM3, Vol. 15, Issue 02, 021204, (February 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021204

KEYWORDS: 3D modeling, Photomasks, Near field, Electromagnetism, Lithography, Semiconducting wafers, Scattering, Lithographic illumination, Diffraction, Critical dimension metrology

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Proceedings Article | 18 March 2015 Paper

Accurate, full chip 3D electromagnetic field model for non-Manhattan mask corners

Michael Lam, Chris Clifford, Michael Oliver, David Fryer, Edita Tejnil, Kostas Adam

Proceedings Volume 9426, 94260P (2015) https://doi.org/10.1117/12.2085671

KEYWORDS: 3D modeling, Photomasks, Near field, Critical dimension metrology, Semiconducting wafers, Lithography, Image quality, Data transmission, Electromagnetism, Diffraction

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Proceedings Article | 17 October 2014 Paper

14-nm photomask simulation sensitivity

John Sturtevant, Peter Buck, Steffen Schulze, David Fryer, Edita Tejnil, Kostas Adam, Michael Lam, Chris Clifford, Mike Oliver, Ana Armeanu, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Proceedings Volume 9231, 92310I (2014) https://doi.org/10.1117/12.2066483

KEYWORDS: Photomasks, 3D modeling, Semiconducting wafers, Optical proximity correction, Data modeling, Calibration, Manufacturing, Photoresist materials, Metrology, Refractive index

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SPIE Journal Paper | 2 December 2013

Impact of 14-nm photomask uncertainties on computational lithography solutions

John Sturtevant, Edita Tejnil, Timothy Lin, Steffen Schulze, Peter Buck, Franklin Kalk, Kent Nakagawa, GuoXiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

JM3, Vol. 13, Issue 01, 011004, (December 2013) https://doi.org/10.1117/12.10.1117/1.JMM.13.1.011004

KEYWORDS: Photomasks, Semiconducting wafers, 3D modeling, Optical proximity correction, Critical dimension metrology, Calibration, Photoresist materials, Computational lithography, Data modeling, Mathematical modeling

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Proceedings Article | 10 September 2013 Paper

The impact of 14nm photomask variability and uncertainty on computational lithography solutions

John Sturtevant, Edita Tejnil, Peter Buck, Steffen Schulze, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Proceedings Volume 8880, 88800F (2013) https://doi.org/10.1117/12.2030733

KEYWORDS: Photomasks, Semiconducting wafers, 3D modeling, Optical proximity correction, Calibration, Photoresist materials, Critical dimension metrology, Manufacturing, Data modeling, Mathematical modeling

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Proceedings Article | 12 April 2013 Paper

The impact of 14-nm photomask uncertainties on computational lithography solutions

John Sturtevant, Edita Tejnil, Tim Lin, Steffen Schultze, Peter Buck, Franklin Kalk, Kent Nakagawa, Guoxiang Ning, Paul Ackmann, Fritz Gans, Christian Buergel

Proceedings Volume 8683, 868307 (2013) https://doi.org/10.1117/12.2013748

KEYWORDS: Photomasks, Semiconducting wafers, Optical proximity correction, 3D modeling, Calibration, Critical dimension metrology, Manufacturing, Process modeling, Data modeling, Computational lithography

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Proceedings Article | 13 March 2012 Paper

OPC model prediction capability improvements by accounting for mask 3D-EMF effects

Jacky Cheng, Jessy Schramm, Dong Qing Zhang, Yee Mei Foong, Christian Zuniga, Thuy Do, Edita Tejnil, John Sturtevant, Angeline Chung, Kenneth Jantzen

Proceedings Volume 8326, 83261R (2012) https://doi.org/10.1117/12.916863

KEYWORDS: 3D modeling, Data modeling, Photomasks, Calibration, Performance modeling, Semiconducting wafers, Optical proximity correction, Systems modeling, Panoramic photography, System on a chip

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Proceedings Article | 23 March 2011 Paper

Influence of the illumination source on model-based SRAF placement

Rachit Gupta, Aasutosh Dave, Edita Tejnil, Srividya Jayaram, Pat LaCour

Proceedings Volume 7973, 79731U (2011) https://doi.org/10.1117/12.879492

KEYWORDS: SRAF, Model-based design, Source mask optimization, Logic, Resolution enhancement technologies, Image analysis, Optical lithography, Lithographic illumination, Lithography, Standards development

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Proceedings Article | 17 October 2008 Paper

Characterizing OPC model accuracy versus lens induced polarization effects in hyper NA immersion lithography

Tamer Tawfik, Edita Tejnil

Proceedings Volume 7122, 712245 (2008) https://doi.org/10.1117/12.801516

KEYWORDS: Optical proximity correction, Polarization, Calibration, Data modeling, Systems modeling, Apodization, Immersion lithography, Lithography, Polarizers, Wave plates

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Proceedings Article | 7 March 2008 Paper

Advanced mask process modeling for 45-nm and 32-nm nodes

Edita Tejnil, Yuanfang Hu, Emile Sahouria, Steffen Schulze, Ming Jing Tian, Eric Guo

Proceedings Volume 6924, 69243H (2008) https://doi.org/10.1117/12.772975

KEYWORDS: Data modeling, Photomasks, Calibration, Etching, Process modeling, Critical dimension metrology, Photoresist processing, Electron beam lithography, Cadmium, Lithography

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Proceedings Article | 7 March 2008 Paper

SEM-contour based mask modeling

Jim Vasek, Edita Tejnil, Ir Kusnadi, Ofer Lindman, Ovadya Menadeva, Ram Peltinov

Proceedings Volume 6924, 69244Q (2008) https://doi.org/10.1117/12.776669

KEYWORDS: Photomasks, Calibration, Data modeling, Process modeling, Optical proximity correction, Scanning electron microscopy, Semiconducting wafers, Electron beam lithography, Lithography, Reticles

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Proceedings Article | 26 March 2007 Paper

Heuristics for truncating the number of optical kernels in Hopkins image calculations for model-based OPC treatment

Christian Zuniga, Edita Tejnil

Proceedings Volume 6520, 65203I (2007) https://doi.org/10.1117/12.712625

KEYWORDS: Thin films, Optical proximity correction, Systems modeling, Model-based design, Imaging systems, Polarization, Image acquisition, System on a chip, Error analysis, Lithography

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Proceedings Article | 20 May 2006 Paper

A single-exposure approach for patterning 45nm flash/DRAM contact hole mask

Ting Chen, Doug Van Den Broeke, Edita Tejnil, Stephen Hsu, Sangbong Park, Gabriel Berger, Tamer Coskun, Joep De Vocht, Noel Corcoran, J. Fung Chen, Eddy van der Heijden, Jo Finders, Andre Engelen, Robert Socha

Proceedings Volume 6283, 62831A (2006) https://doi.org/10.1117/12.681873

KEYWORDS: Optical proximity correction, Electroluminescence, Optical lithography, Printing, Photomasks, Lithographic illumination, Semiconducting wafers, Diffractive optical elements, Manufacturing, Nanoimprint lithography

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Contact hole (CH) patterning for DRAM/Flash presents a key challenge for design rule below 50nm due to aggressive low-k₁ conditions common in the leading DRAM/Flash memory designs. Combining optical proximity corrections (OPC) to the mask and optimized illumination has become an important part of production-worthy lithography processes for the 65nm node. At k₁<0.31, both resolution and imaging contrast can become severely limited at NA<0.85 with some commonly available off-axis illumination sources. Hyper-NA and immersion lithography with polarized illumination capability can significantly increase the process latitude and is indispensable for manufacturing at sub-50nm design rule and beyond. In this work, we describe our single-exposure approach for patterning Flash/DRAM contact-hole patterns with 120nm minimum pitch (and 60nm CH target CD). We use 6% attPSM dark-field mask both in simulations and for wafer exposures on ASML XT:1700i at NA=1.2. We begin with illumination source optimization using full vector high-NA simulation with (unpolarized and Y polarized illumination) a production resist stack and taking into account during the optimization all manufacturability requirements for the corresponding diffractive optical element (DOE) that produces the optimized source at the mask level. Using the optimized source, model-based OPC treatment was performed, which includes scattering bars (SB) placement using IML^TM technology and model-based CH feature biasing (MOPC) to achieve the optimum pattern printing fidelity in-focus and process latitude. To further increase of the depth of focus (DOF) for common process window (CPW) from 150nm to >250m, we used the focus scan (or, focus drilling) technique which is available in today's leading 193nm scanners. Our results showed that, for the 120nm minimum pitch Flash CH patterns used, hyper-NA (NA>1) and immersion lithography (ASML XT:1700i platform was used in both simulation and scheduled for wafer exposures) is necessary, together with optimized illumination and model based OPC treatment, to achieve a yielding baseline process (common process window with DOF ~100nm). We also demonstrate that polarized illumination can significantly enhance the overall imaging performance, i.e., worst-case DOF can be increased >25% with optimized source, which is limited by the dense pitch CH arrays for this particular Flash CH pattern. With focus scan enabled for imaging, we show that the worst-case individual DOF can be easily doubled (from 150nm to >300nm) and EL at best focus (BF) remains >10% even at the largest focus range settings (400nm). The common process window decreased as focus scan range was increased, indicating that to maintain optimum common process window, MOPC treatment must be also performed under the same focus scan conditions. Patterning optimization (from illumination optimization to OPC) with focus scan enabled shows excellent promise as a single-exposure solution for patterning this 45nm Flash CH pattern and beyond.

Proceedings Article | 6 May 2005 Paper

Modeling the defect inspection sensitivity of a confocal microscope

E. Gullikson, E. Tejnil, K.-Y. Tsai, A. Stivers, H. Kusunose

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600209

KEYWORDS: Optical spheres, Multilayers, Confocal microscopy, Photomasks, Microscopes, Silica, Defect inspection, Light scattering, Inspection, Scattering

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Proceedings Article | 6 December 2004 Paper

Characterization of defect detection sensitivity in inspection of mask substrates and blanks for extreme-ultraviolet lithography

Edita Tejnil, Eric Gullikson, Alan Stivers

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569849

KEYWORDS: Inspection, Optical spheres, Silica, Multilayers, Defect detection, Confocal microscopy, Photomasks, Extreme ultraviolet lithography, Surface roughness, Reflectivity

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Proceedings Article | 6 December 2004 Paper

EUV mask pilot line at Intel Corporation

Alan Stivers, Pei-Yang Yan, Guojing Zhang, Ted Liang, Emily Shu, Edita Tejnil, Barry Lieberman, Rajesh Nagpal, Kangmin Hsia, Michael Penn, Fu-Chang Lo

Proceedings Volume 5567, (2004) https://doi.org/10.1117/12.569176

KEYWORDS: Photomasks, Extreme ultraviolet, Inspection, Extreme ultraviolet lithography, Reflectivity, Metrology, Lithography, Optical lithography, Standards development, Mask making

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Proceedings Article | 28 May 2004 Paper

Lithography-based automation in the design of program defect masks

George Vakanas, Saghir Munir, Edita Tejnil, Daniel Bald, Rajesh Nagpal

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.544536

KEYWORDS: Computer aided design, Photomasks, Inspection, Optical proximity correction, SRAF, Binary data, Image processing, Model-based design, Defect inspection, Resolution enhancement technologies

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Proceedings Article | 20 May 2004 Paper

EUVL defect printability at the 32-nm node

Eric Gullikson, Edita Tejnil, Ted Liang, Alan Stivers

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.558816

KEYWORDS: Multilayers, Extreme ultraviolet lithography, Photomasks, Coating, Reflectivity, Opacity, Cameras, Semiconducting wafers, Systems modeling, Scattering

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Proceedings Article | 26 June 2003 Paper

Alternating phase-shift masks for contact patterning

Richard Schenker, Gary Allen, Edita Tejnil, Shem Ogadhoh

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485495

KEYWORDS: Photomasks, Optical lithography, Inspection, Glasses, Semiconducting wafers, Phase shifts, Defect inspection, Defect detection, Manufacturing, Deep ultraviolet

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Proceedings Article | 27 December 2002 Paper

Pattern inspection of EUV masks using DUV light

Ted Liang, Edita Tejnil, Alan Stivers

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467298

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Deep ultraviolet, Oxides, Etching, Extreme ultraviolet lithography, Reflectivity, Contamination, Defect inspection

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Proceedings Article | 1 August 2002 Paper

Lithography strategy for 65-nm node

Yan Borodovsky, Richard Schenker, Gary Allen, Edita Tejnil, David Hwang, Fu-Chang Lo, Vivek Singh, Robert Gleason, Joseph Brandenburg, Robert Bigwood

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476916

KEYWORDS: Optical lithography, Photomasks, Optical proximity correction, Manufacturing, Inspection, Lithography, 193nm lithography, Phase shifts, Mask making, Semiconducting wafers

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Proceedings Article | 11 March 2002 Paper

Enhanced optical inspectability of patterned EUVL mask

Ted Liang, Alan Stivers, Pei-yang Yan, Edita Tejnil, Guojing Zhang

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458303

KEYWORDS: Inspection, Reflectivity, Extreme ultraviolet lithography, Photomasks, Deep ultraviolet, Chromium, Image transmission, Optical inspection, Image enhancement, Ruthenium

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Proceedings Article | 11 March 2002 Paper

Dependence of mask-defect printability and printability criteria on lithography process resolution

Alan Stivers, Edita Tejnil

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458279

KEYWORDS: Photomasks, Lithography, Critical dimension metrology, Transistors, Extreme ultraviolet lithography, Cadmium, Image resolution, Optical lithography, Semiconducting wafers, Tolerancing

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Proceedings Article | 22 January 2001 Paper

Tritone inspection for embedded phase-shift mask

Wen-Hao Cheng, Jeff Farnsworth, Edita Tejnil

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410763

KEYWORDS: Inspection, Calibration, Photomasks, Chromium, Optical lithography, Defect inspection, Binary data, Phase shifts, Sodium, Semiconducting wafers

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Proceedings Article | 21 July 2000 Paper

EUV mask fabrication with Cr absorber

Pawitter Mangat, Scott Hector, Stewart Rose, Gregory Cardinale, Edita Tejnil, Alan Stivers

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390099

KEYWORDS: Photomasks, Chromium, Etching, Reflectivity, Extreme ultraviolet, Extreme ultraviolet lithography, Multilayers, Inspection, Deep ultraviolet, Silicon

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Proceedings Article | 19 July 2000 Paper

Evaluation of printability and inspection of phase defects on hidden-shifter alternating phase-shift masks

Edita Tejnil, Alan Stivers, Richard Schenker, Larry Zurbrick

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392038

KEYWORDS: Glasses, Inspection, Etching, Wet etching, Photomasks, Defect inspection, Defect detection, Semiconducting wafers, Optical lithography, Interference (communication)

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Proceedings Article | 5 July 2000 Paper

Alt-PSM for 0.10-um and 0.13-um polypatterning

Richard Schenker, Heinrich Kirchauer, Alan Stivers, Edita Tejnil

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388937

KEYWORDS: Photomasks, Phase shifts, Optical lithography, Monochromatic aberrations, Binary data, Overlay metrology, Calibration, Semiconducting wafers, Inspection, Glasses

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Proceedings Article | 30 December 1999 Paper

Options for at-wavelength inspection of patterned extreme ultraviolet lithography masks

Edita Tejnil, Alan Stivers

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373373

KEYWORDS: Inspection, Photomasks, Extreme ultraviolet, Defect inspection, Electrons, Sensors, Extreme ultraviolet lithography, Data acquisition, Plasma, Signal detection

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Proceedings Article | 25 June 1999 Paper

Actinic EUVL mask blank defect inspection system

Seongtae Jeong, Lewis Johnson, Yun Lin, Senajith Rekawa, Pei-yang Yan, Patrick Kearney, Edita Tejnil, James Underwood, Jeffrey Bokor

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351101

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Opacity, Sensors, Multilayers, Inspection, Defect detection, Signal detection, Defect inspection, Particles

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Proceedings Article | 25 June 1999 Paper

EUV mask patterning approaches

Pei-yang Yan, Guojing Zhang, Patrick Kofron, Jenn Chow, Alan Stivers, Edita Tejnil, Gregory Cardinale, Patrick Kearney

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351102

KEYWORDS: Photomasks, Extreme ultraviolet, Silicon, Metals, Extreme ultraviolet lithography, Optical lithography, Mask making, Reflectivity, Etching, Opacity

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Proceedings Article | 23 April 1999 Paper

Mask technology for EUV lithography

M. Bujak, Scott Burkhart, Charles Cerjan, Patrick Kearney, Craig Moore, Shon Prisbrey, Donald Sweeney, William Tong, Stephen Vernon, Christopher Walton, Abbie Warrick, Frank Weber, Marco Wedowski, Karl Wilhelmsen, Jeffrey Bokor, Sungho Jeong, Gregory Cardinale, Avijit Ray-Chaudhuri, Alan Stivers, Edita Tejnil, Pei-yang Yan, Scott Hector, Khanh Nguyen

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346225

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Multilayers, Reflectivity, Extreme ultraviolet, Silicon, Inspection, Optical lithography, Ion beams

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Proceedings Article | 7 July 1997 Paper

Characterization of an EUV Schwarzschild objective using phase-shifting point diffraction interferometry

Kenneth Goldberg, Edita Tejnil, Sang Hun Lee, Hector Medecki, David Attwood, Keith Jackson, Jeffrey Bokor

Proceedings Volume 3048, (1997) https://doi.org/10.1117/12.275787

KEYWORDS: Extreme ultraviolet, Optical testing, Interferometry, Mirrors, Wavefronts, Phase shifts, Diffraction gratings, Objectives, Diffraction, EUV optics

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