We demonstrated an enhancement of light-extraction efficiency (LEE) in an AlGaN UVC light-emitting diode (LED) using photonic-crystal (PhC)-reflector fabricated on a p-GaN contact layer, which was introduced to realize both of low resistivity and high-reflectivity in p-contact layer. We fabricated an AlGaN UVC-LED with PhC-reflector on p-GaN contact layer, and confirmed that the external quantum efficiency (EQE) was increased by 1.7 times by introducing PhC-reflector. We also fabricated flip-chip UVC LED with PhC-reflector on p-contact layer and obtained more than 50 mW output power.
We demonstrated an enhancement of light-extraction efficiency (LEE) in an AlGaN UVC light-emitting diode (LED) using photonic-crystal (PhC)-reflector fabricated on a p-GaN contact layer, which was introduced to realize both of low resistivity and high-reflectivity in p-contact layer. We fabricated an AlGaN UVC-LED with PhC-reflector on p-GaN contact layer, and confirmed that the external quantum efficiency (EQE) was increased by 1.7 times by introducing PhC-reflector. We also fabricated flip-chip UVC LED with PhC-reflector on p-contact layer and obtained more than 50 mW output power.
AlGaN UV-C light-emitting diodes (LEDs) are attracting a great deal of attentions for applications of sterilization, water purification, in the medical fields, and so on. The increase in wall-plug efficiency (WPE) is a recent main subject for an AlGaN UVC-LED. The main cause for reducing WPE is a significant reduction in light-extraction efficiency (LEE) owing to a heavy light absorption by p-GaN contact layer. If we introduce transparent p-AlGaN contact layer for increasing LEE, the contact resistance is increased, resulting in the significant increase of operating voltage. In order to achieve both of low contact resistance and high-reflectivity in a p-contact layer, we introduced a photonic crystal (PhC) reflector on a p-contact layer. We predicted by a simulation analysis that an LEE of UVC-LED can be increased by 2.8 times by introducing a PhC reflector on p-GaN contact layer.
Previously, we fabricated a 283nm AlGaN DUV-LED with PhC reflector on a p-AlGaN transparent contact layer, and obtained an increase of external quantum efficiency (EQE) from 8 to 10 % by introducing PhC reflector. However, the contact resistance was increased. In this work, we fabricated a 273nm AlGaN UVC-LED with PhC reflector on p-GaN contact layer. The EQE was increased by about 1.7 times by introducing PhC reflector. The operating voltage was not changed even when introducing PhC and remained low value. We confirmed that it is possible to realize high WPE by introducing PhC reflector on the p-GaN contact layer of UVC-LED.
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