A silicon-on-insulator substrate hosts a broadband wavelength filter featuring perturbed Bragg gratings. This perturbation is induced by strategically placing waveguides near the gratings. The use of smaller grating corrugation widths leads to a larger coupling coefficient, thereby significantly improving the grating reflectivity. Theoretical analysis of this compact device reveals a simplified circuit design, which is further corroborated by finite difference time domain simulation results. The achieved broadband filter boasts a bandwidth of approximately 40 nm, coupled with an impressive extinction ratio of around 39 dB, all achieved with a modest grating length of only 20 μm. The rate of change of the Bragg wavelength concerning the width of the perturbed waveguide is approximately 0.0625. It is noteworthy that this achievement is attained by maintaining fixed waveguide and grating parameters while selectively altering the width of the perturbed waveguide.
A nested ring resonator structure has been devised on a silicon-on-insulator platform, incorporating a feedback path through the addition of a port to the device. This design selectively enhances resonant wavelengths while effectively suppressing numerous consecutive resonant wavelengths by ∼30 dB. Consequently, it significantly expands the free spectral range (FSR) by over 85 nm, exceeding 20 times the FSR achieved without the feedback path. The resonant peak wavelength can be tuned by ∼40 nm/μm change in the feedback path, offering a broader range for refractive index sensing. The impact of the additional phase control parameter length in the feedback path was investigated. Theoretical analysis was followed by finite differential time domain simulations to validate the results. Various device parameters were systematically adjusted to observe a substantial increase in the FSR and improved controllability over peak transmission.
A compact microring resonator (MRR) and its implementation for polarization rotation-based all-optical switching are proposed. The polarization rotation has been achieved by enhancing geometry-induced birefringence of the device and with the insertion of polarization rotator in the race-track-shaped MRR. The proposed device has been modeled using Jones matrix and the finite-difference time-domain simulation method. The insertion loss and the extinction ratio have been found to be −0.13 and 19.39 dB, respectively.
This paper highlights the implementation of all-optical mode alteration using a simple micro-ring resonator (MRR). The polarization-based switching happens if a suitable input polarized light is applied as a source and pump power. The mode-conversion with respect to change in the behavior of the input and in the pump signal is used to realize all-optical OR/NOR and XOR/XNOR logic gates in both the output ports of the single MRR simultaneously. The all-optical switching behavior is also justified by its time-graph. The model is verified using the finite-difference time-domain simulation approach. Some characteristics parameters are also explained to highlight its benefits. The architecture may also be used to design new polarization-conversion centered logical and arithmetic circuits.
An ultra-compact all-optical AND/NAND logic switch using symmetric two micro-ring resonators (MRRs) are theoretically proposed under optical pump-probe configuration. Two pump pulses are employed to modulate two MRRs respectively. The simulation verified the proposed design which possesses extinction ratios (ER) of 12.3 dB at ultra-low pump power of 1.82mW.
All-optical universal logic gates are theoretically investigated and demonstrated in a single silicon microring resonator due to mode conversion. Mode conversion takes place at the switching speed of 0.2 ps and at ultrahigh quality factor (Q-factor) and requires low power. Simulated results obtained from the finite-difference-time-domain method verified our proposed model. The Q-factor for NOT, NAND, and NOR logic gates is noted as high as around 1500, 1500, and 2400, respectively. The design is simple and silicon-on-insulator compatible.
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