In this work, we present an advanced heterogeneous integration scheme which consists in integrating a thin InP layer by
wafer-bonding onto a silicon wafer (InPoSi) on which a regrowth step of III-V materials is implemented. Vertical p-i-n
AlGaInAs lasers obtained from a single Selective Area Growth (SAG) step on InPoSi were fabricated. Thanks to SAG,
the AlGaInAs-MQW structures successfully cover a PL range of 160 nm in the C+L band. Based on these structures, a 5-
channel laser array was fabricated. The latter successfully covers a 155 nm-wide spectral band from 1515 nm to 1670 nm
with a maximum output power of 20 mW under continuous-wave regime at 20°C. High thermal stability up to 70°C is
demonstrated with a characteristic temperature of 69°C for the lasers emitting from 1515 nm to 1600 nm.
KEYWORDS: Antennas, Modulation, Analog electronics, Single mode fibers, Avalanche photodetectors, Wireless communications, Radio over Fiber, Radio optics, Clocks, Signal to noise ratio
An IFoF/V-band link is experimentally presented in a 100MBd QPSK downlink transmission across 7km fiber by a high-power EML and over-the-air by 60GHz beamforming antenna with 32-radiating elements, comprising the first demonstration of a cost-effective end-to-end directional Fiber-Wireless link for dense 5G millimeter-wave networks.
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