The structural influence of photoacid generators on DUV resists performance is investigated in both high and low activation energy resists system. The lithographic behaviors of the photoacid generator is considered in terms of the structure of the photogenerated acid and the light sensitive chromophore. First, the lithographic impact of the photogenerated acid is investigated in terms of acid strength and acid size in resists optimized for high and low temperature processing, respectively. Dissolution kinetics, contrast curve data and absorbance data are presented for a series of high and low activation energy resists in which the structure of the photogenerated acid is systematically varied. The results of these studies are discussed in terms of the photogenerated acid, emphasizing the impact of acid strength and size on lithographic performance and resists dissolution rate kinetics for each resists platform. Secondly, the structural influence of the light sensitive PAG chromophore is investigated by comparing the lithographic performance and dissolution rate kinetics are probed in terms of resist type and PAG structure.
This paper discuses recent results of time response and spectral responsivity measurements made on AlxGa1-xN/GaN-based p-i-n UV detector with .03 < x < 0.12, where x is the aluminum concentration. AlxGa1-xN/GaN-based p-i-n detectors with response times as fast as 6 ns corresponding to greater than 26 MHz bandwidths are reported. Peak spectral responsivities of homojunction Al.03Ga.97N p-i-n UV detectors were found to be as high as 0.08 A/W at 343 nm while those of the Al.1Ga.9N/GaN p-i-ns were as high as 0.15 A/W at 360 nm. Homojunction GaN and Al.03Ga.97N as well as p-Al.1Ga.9N/i-GaN/n-GaN structures were grown on sapphire substrates by reactive molecular beam epitaxy and processed into UV detectors. These p-i-n detectors were then characterized in terms of their time response and spectral responsivity. Attempts to measure the noise of the Al.03Ga.97N homojunction p-i-ns are also discussed.
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