LUMENTUM’s multi-channel VCSELs in combination with SPAD (Single photon avalanche photodiode) receivers can perform “true” solid-state scanning in a single direction. The multi-channel VCSEL along with collimating lens and a horizontal diffuser can be matched with SPAD arrays of different sizes and aspect ratios. In this paper, we show the characterization results of the multi-channel VCSEL with 57 channels and 7J epi architecture, at 5ns pulse width, 0.1% duty cycle from temperature range of -40°C to 125°C. The L-I tests at 25°C yield a threshold current of 0.57A, optical power of 140W, and slope efficiency of 7.21W/A at 20A. The optical power, slope efficiency decreased by only 20% from -40°C to 125°C. The FF divergence at 25°C is about 25° and varies by 1.9° from -40°C to 125°C. The leakage current between different anodes/channels at 85ºC is only 0.27μA for a voltage difference of 50V between the channels. We continue to develop higher current drivers to characterize the VCSELs at higher currents. The next generation VCSELs will have higher junction-count epi, allowing for even higher power and slope efficiency. This scheme of addressable high speed and high power VCSELs tailored for operation with SPAD arrays is a very crucial step towards building allelectronic scanning automotive grade LIDARs.
LUMENTUM’s multi-channel VCSEL arrays in combination with SPAD (Single photon avalanche photodiode) receivers can make up the primary components of a “true” Solid-State Electronic Scanning LIDAR. The light from VCSELs reflects off an object, and is detected by an SPAD array receiver, that contains depth information, allowing for line scanning and 3D imaging of surrounding objects. The current system has 1D addressability and can perform line scanning in a single direction. The novel optics design consisting of collimating lenses and a horizontal diffuser allows for pairing of VCSELs with SPAD arrays of different sizes and aspect ratios and illuminating different field of views. The VCSEL has 57 channels with 7J epi architecture, with each channel emitting up to 248W at pulsewidths of 5-6ns, DC of 0.03%, making them optimal for short to medium range LIDAR. Wafer level testing of VCSELs at pulsewidths of 100ns, shows very good uniformity in power, voltage, wavelength, divergence and near field uniformity, between different channels. The channel to channel leakage between the anode pads is negligible and in the order of nano-amperes. In this paper, we will focus on VCSEL part of the system and present wafer level test results and initial module data at high speed.
KEYWORDS: Vertical cavity surface emitting lasers, LIDAR, Three dimensional sensing, Temperature metrology, Sensing systems, Oxidation, Near field optics, Near field, Internet, Consumer electronics
Lumentum’s short pulse single-junction VCSEL arrays are currently being deployed in Time of Flight (ToF) sensors for short-range Light Detection and Ranging (LIDAR) applications in consumer electronics. However, single-junction VCSEL devices have a slope efficiency (SE) of only around 1.1 W/A making them unsuitable for longer range, higher power applications. With the rise of autonomous vehicle market, there is a need for ultra-short pulse, high peak power VCSELs for medium to long-range LIDAR systems. Multi-junction VCSELs are ideal candidates for this segment. The multi-junction VCSEL consists of stacked gain regions connected by highly doped tunnel junctions. An electron which radiatively recombines with a hole in one gain region, generating a photon, can then tunnel back into the conduction band via the highly doped region and is again available to generate another photon in the subsequent gain region, and so on. The total photons or output power scales with the number of junctions in the device. The optical power density and chip size are critical parameters of a LIDAR module. In this paper, we report the results of compact multi-junction arrays capable of delivering very high peak power.
Multiple active regions connected in series with low-resistance tunnel junctions enable a new class of high-brightness VCSEL arrays that enhance the capability for 3DS sensing applications. Multiple photons can be generated by each injected electron which proportionally increases the power and brightness of the VCSEL with additional benefit of reduced inductance penalty at the same output power. Two and three junction VCSEL arrays have been demonstrated for mobile Time-of-Flight applications with +30% module efficiency. Five junction VCSEL arrays reach 100W at 25A and 400W at 100A for automotive LIDAR applications. Preliminary reliability data appears promising.
Small, single mode VCSELs have been pursued almost since the inception of the device, but have been difficult to realize. Here we present data on lithographic and oxide-free VCSELs as small as 2 μm in diameter that produce single transverse mode powers of 8 mW and have high efficiency. The efficiencies reach 46% power conversion with greater than 73 % slope efficiency, with threshold current as low as 300 μA. Smaller VCSELs of 1 μm diameter produce 37 % power conversion efficiency with greater than 79 % slope efficiency, and single mode power over 5 mW. The keys to the high performance are the lithographic control and oxide elimination that reduce the electrical and thermal resistances.
Data are presented demonstrating a new lithographic vertical-cavity surface-emitting laser (VCSEL) technology, which
produces simultaneous mode- and current-confinement only by lithography and epitaxial crystal growth. The devices are
grown by solid source molecular beam epitaxy, and have lithographically defined sizes that vary from 3 μm to 20 μm.
The lithographic process allows the devices to have high uniformity throughout the wafer and scalability to very small
size. The 3 μm device shows a threshold current of 310 μA, the slope efficiency of 0.81 W/A, and the maximum output
power of more than 5 mW. The 3 μm device also shows single-mode single-polarization operation without the use of
surface grating, and has over 25 dB side-mode-suppression-ratio up to 1 mW of output power. The devices have low
thermal resistance due to the elimination of oxide aperture. High reliability is achieved by removal of internal strain
caused by the oxide, stress test shows no degradation for the 3 μm device operating at very high injection current level of
142 kA/cm2 for 1000 hours, while at this dive level commercial VCSELs fail rapidly. The lithographic VCSEL
technology can lead to manufacture of reliable small size laser diode, which will have application in large area 2-D
arrays and low power sensors.
Data are presented demonstrating lithographic vertical-cavity surface-emitting lasers (VCSELs) and their scaling
properties. Lithographic VCSELs have simultaneous mode- and current-confinement defined only by lithography and
epitaxial crystal growth. The lithographic process of these devices allows getting uniform device size throughout a wafer
and easy scaling to manufacture very small lasers. The semiconductor's high thermal conductivity enables the small
lithographic VCSEL to have lower thermal resistance than an oxide-aperture VCSEL, while the lithographic fabrication
produces high VCSEL uniformity even at small size. Very dense packing is also possible. Devices of 3 μm to 20 μm
diameters are fabricated and scaling properties are characterized. 3 μm lithographic VCSELs produce output power of
4.1 mW, with threshold current of 260 μA and slope efficiency of 0.76 W/A at emission wavelength of ~980 nm. These
VCSELs also have single-mode single-polarization lasing without the use of a surface grating, and have >25 dB sidemode-
suppression-ratio up to 1 mW of output power. Lifetime tests demonstrate that 3 μm VCSEL operates for
hundreds of hours at high injection current level of 85 kA/cm2 with 3.7 mW output power without degradation. Scaling
properties and low thermal resistance of the lithographic VCSELs can extend the VCSEL technology to manufacturable
and reliable small size lasers and densely packed arrays with long device lifetime.
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