VCSELs continue to be widely deployed in data communication networks. The total bandwidth requirements continue to
grow, resulting in higher data rates and utilization of both spatial and wavelength multiplexing. This paper will discuss
recent results on VCSELs operating at aggregate speeds up to 1000Gbps as well as the prospects and results on
extending to higher serial data rates.
In this paper we will discuss recent results on high speed VCSELs targeted for the emerging 16GFC (Fibre Channel)
standard as well as the now forming 25Gbps PCI express standard. Significant challenges in designing for reliability and
speed have been overcome to demonstrate VCSELs with bandwidth in excess of 20Gbps.
In this paper we describe both the 1310 and 1550 nm VCSEL development work at Honeywell using both InP and GaAs substrates, and using both MOCVD and MBE. We describe the material systems, the designs, the growth techniques, and the promising results obtained and compare them to the needs of the communications industry. InGaAsN quantum well based VCSELs have been demonstrated to 1338 nm lasing at temperatures up to 90 C. Continuous wave InP based 1550 nm VCSELs have also been demonstrated.
Born of necessity of application, the Vertical Cavity Surface Emitting Laser (VCSEL) is now found in nearly all optical networking systems based on standards such as the IEEE 802.3z and ANSI X3.t11. Reliability continues to be the hallmark of the technology, and the volume manufacturing aspects are now realized. While VCSEls satisfying optical networking standards continue to provide the highest volume applications, the advantages of the technology are beginning to enable novel optical equipment. This paper explores development of VCSELs at wavelengths from 650 to 850nm, and the commercial applications of these devices in both the data communications and optical sensing arenas. VCSELs operating at longer wavelengths are also being developed, but are not at a stage of commercialization to be discussed in this forum.
Carrier dynamics in self-assembled quantum dots, grown by molecular beam epitaxy, have been studied. The temperature dependence of the relaxation times, measured by room temperature high frequency impedance response of quantum dot lasers and by low temperature (T=4K) differential transmission spectroscopy, strongly suggests that electron- hole scattering is the dominant scattering mechanism in quantum dots. The favorable relaxation times can be exploited to realize far infrared emission and detection based on intersubband transitions in the dots.
In this paper we discuss crystal growth, spontaneous emission characteristics and low threshold performance of 1.3 micrometers InGaAs/GaAs quantum dot heterostructure lasers grown using sub-monolayer depositions of In, Ga, and As. Oxide-confinement is effective in obtaining a low threshold current of 1.2 mA and threshold current density of 19 A/cm2 under continuous-wave room-temperature operation. At 4 K a remarkably low threshold current density of 6 A/cm2 is obtained. We also discuss ground state lasing at (lambda) equals 1.07 micrometers of a vertical cavity surface emitting laser in which a stacked and high dot density active region has been incorporated. The high QD density active region is achieved using alternating monolayers of InAs and GaAs. Lasing threshold conditions and gain parameters for a ground state quantum dot vertical cavity laser are also analyzed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.