Over the past few years, noise2noise, noise2void, noise2self, and unsupervised deep-learning (DL) denoising techniques have achieved great success, particularly in scenarios where ground truth data is not available or is difficult to obtain. For semiconductor SEM images, ground truth or clean target images with lower noise levels can be obtained by averaging hundreds of frames at the same wafer location, but it is expensive and can result in physical damage to the wafer. This paper’s scope is to denoise SEM images without clean target images and with limited image counts. Inspired by noise2noise, we proposed an additive noise algorithm and DL U-net. We achieved good denoising performance using a limited number of noisy SEM images, without the clean ground truth images. We proposed the “denoise2next” and “denoise2best”. We compared generative adversarial network(GAN) generated images and Additive noise images for data augmentation. This paper further quantified the impact of image noise level, pattern diversity, and continuous (aka transfer) learning. The data sets used in the work include both line/space and logic pattern.
Our pulsed Ti:S laser is abaxial longitudinally pumped by a frequency double YAG laser with VRM unstable resonator, the Ti:S crystal is Bi-Brewster-cutting. The single output energy of the Ti:S laser is over 130 mJ at 1 Hz and over 110 mJ at 10 Hz, the efficiency is 39.6% and 36. 7% respectively, the tunable range is 0.723 approximately 0.996 micrometers with only a pair of flat mirrors, the output energy in the two ends is 1/10 of that in the center wavelength. We discuss the effect of choice of the crystal size, the angle (alpha) (between the pump beam and the cavity axis) on efficiency. We suggest that the high absorptivity, high FOM value of the crystal bring high output and high efficiency when longitudinally pumped by a flat-top laser beam. We also show the scheme of our Ti:S laser and our broad band transmitted curve of reflective mirror.
We present a 'loss balance' criterion to estimate the proper gain medium length (PGML) of the pulsed Ti:Sapphire laser under high pump level and optimal output coupling conditions according to the gain-loss character of pulsed Ti3+:Al2O3 laser longitudinally pumped by a pulsed laser beam, it was proved by several examples, and high efficiency was obtained. In one-longitudinally-pumped Ti3+:sapphire laser, the PGML 1 is determined by the equation: e-(alpha (p)1) plus e-(alpha (p)1/3) equals 1, where (alpha) p is the absorption coefficient to the pump beam, (beta) is the figure of merit (FOM value) of the crystal. When dual-longitudinally- pumped, the PGML is L less than or equal to 2l/3.
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