Prof. Hanns-Ulrich Habermeier Profile

Prof. Hanns-Ulrich Habermeier

Emeritus at Max.Planck-Institute for Solid State Research

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 8 March 2014 Paper

Photon-induced thermoelectric voltages in complex oxide superlattices

Hanns-Ulrich Habermeier, Stefan Heinze

Proceedings Volume 8987, 898713 (2014) https://doi.org/10.1117/12.2047336

KEYWORDS: Superlattices, Interfaces, Thermoelectric materials, Phonons, Oxides, Resistance, Complex oxides, Anisotropy, Heterojunctions, Thin films

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Proceedings Article | 9 May 2003 Paper

Investigation of electromigration in copper interconnects by noise measurements

Vitali Emelianov, Gopal Ganesan, Aleksandar Puzic, Stefan Schulz, Moshe Eizenberg, Hans-Ulrich Habermeier, Hermann Stoll

Proceedings Volume 5112, (2003) https://doi.org/10.1117/12.497014

KEYWORDS: Copper, Resistance, Temperature metrology, Plasma enhanced chemical vapor deposition, Modulation transfer functions, Metals, Aluminum, Tantalum, Amplifiers, Wheatstone bridges

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Proceedings Article | 7 November 2002 Paper

Ferromagnetic superconducting thin films: physics and technological aspects

Hanns-Ulrich Habermeier, G. Cristiani

Proceedings Volume 4811, (2002) https://doi.org/10.1117/12.455509

KEYWORDS: Superlattices, Superconductors, Stereolithography, Magnetism, Oxides, Fermium, Frequency modulation, Superconductivity, Copper, Ferromagnetics

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Proceedings Article | 22 December 1998 Paper

Anisotropic enhancement of flux pinning in Y-Ba-Cu-O thin films grown by the step-flow growth mode

Hanns-Ulrich Habermeier, T. Haage, Jorg Zegenhagen, V. Hadjev, R. Warthmann, Ch. Joob

Proceedings Volume 3481, (1998) https://doi.org/10.1117/12.335877

KEYWORDS: Thin films, Crystals, Anisotropy, Scanning tunneling microscopy, Transmission electron microscopy, Superconductors, Raman spectroscopy, Thin film growth, Raman scattering, Statistical analysis

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Proceedings Article | 1 October 1990 Paper

Temperature dependence of electron beam induced current and cathodoluminescence contrast of dislocations in GaAs

Michael Eckstein, Abram Jakubowicz, Michael Bode, Hanns-Ulrich Habermeier

Proceedings Volume 1284, (1990) https://doi.org/10.1117/12.20795

KEYWORDS: Temperature metrology, Gallium arsenide, Diffusion, Semiconductors, Electron beams, Doping, Nanostructures, Luminescence, Computing systems, Scanning electron microscopy

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Conference Committee Involvement (7)

Oxide-based Materials and Devices VII

14 February 2016 | San Francisco, California, United States

Oxide-based Materials and Devices VI

8 February 2015 | San Francisco, California, United States

Oxide-based Materials and Devices V

2 February 2014 | San Francisco, California, United States

Oxide-based Materials and Devices IV

4 February 2013 | San Francisco, California, United States

Oxide-based Materials and Devices III

22 January 2012 | San Francisco, California, United States

Showing 5 of 7 Conference Committees

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