Dr. Hans Eisenmann Profile

Dr. Hans Eisenmann

Director at PDF Solutions GmbH

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Publications (9)

Proceedings Article | 30 April 2023 Presentation

Novel approach to solving systematic pattern yield limiters with volume scan diagnosis

Matthew Knowles, Jayant D'Souza, Manish Sharma, Hans Eisenmann, Thomas Zanon

Proceedings Volume 12495, 1249513 (2023) https://doi.org/10.1117/12.2658022

KEYWORDS: Deconvolution, Machine learning, Logic, Design for manufacturing

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Proceedings Article | 10 July 2003 Paper

Generalization of the photo process window and its application to OPC test pattern design

Hans Eisenmann, Kai Peter, Andrzej Strojwas

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.497476

KEYWORDS: Optical proximity correction, Photomasks, Lithography, Silicon, Image processing, Etching, Critical dimension metrology, Artificial intelligence, Data processing, Photoresist processing

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From the early development phase up to the production phase, test pattern play a key role for microlithography. The requirement for test pattern is to represent the design well and to cover the space of all process conditions, e.g. to investigate the full process window and all other process parameters. This paper shows that the current state-of-the-art test pattern do not address these requirements sufficiently and makes suggestions for a better selection of test pattern. We present a new methodology to analyze an existing layout (e.g. logic library, test pattern or full chip) for critical layout situations which does not need precise process data. We call this method "process space decomposition", because it is aimed at decomposing the process impact to a layout feature into a sum of single independent contributions, the dimensions of the process space. This is a generalization of the classical process window, which examines defocus and exposure dependency of given test pattern, e.g. CD value of dense and isolated lines. In our process space we additionally define the dimensions resist effects, etch effects, mask error and misalignment, which describe the deviation of the printed silicon pattern from its target. We further extend it by the pattern space using a product based layout (library, full chip or synthetic test pattern). The criticality of pattern is defined by their deviation due to aerial image, their sensitivity to the respective dimension or several combinations of these. By exploring the process space for a given design, the method allows to find the most critical patterns independent of specific process parameters. The paper provides examples for different applications of the method: (1) selection of design oriented test pattern for lithography development (2) test pattern reduction in process characterization (3) verification/optimization of printability and performance of post processing procedures (like OPC) (4) creation of a sensitive process monitor.

Proceedings Article | 28 May 2003 Paper

Compensation of long-range process effects on photomasks by design data correction

Martin Bloecker, Gerd Ballhorn, Jens Schneider, Nikola Belic, Hans Eisenmann, Danny Keogan

Proceedings Volume 5148, (2003) https://doi.org/10.1117/12.515122

KEYWORDS: Critical dimension metrology, Etching, Photomasks, Data corrections, Data modeling, Dry etching, Convolution, Chromium, Plasma etching, Chlorine

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Proceedings Article | 27 December 2002 Paper

Compensation of long-range process effects on photomasks by design data correction

Jens Schneider, Martin Bloecker, Gerd Ballhorn, Nikola Belic, Hans Eisenmann, Danny Keogan

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467572

KEYWORDS: Critical dimension metrology, Etching, Data corrections, Photomasks, Dry etching, Data modeling, Convolution, Plasma etching, Chromium, Computed tomography

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Proceedings Article | 9 April 2001 Paper

Electron-beam lithography data preparation based on multithreading MGS/PROXECCO

Hans Eichhorn, Melchior Lemke, Juergen Gramss, B. Buerger, Uwe Baetz, Nikola Belic, Hans Eisenmann

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425088

KEYWORDS: Magnesium, Computing systems, Data processing, Lithography, Sun, Photomasks, Optical proximity correction, Electron beam lithography, Data conversion, Clocks

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Proceedings Article | 25 June 1999 Paper

Geometrical correction of the e-beam proximity effect for raster scan systems

Nikola Belic, Hans Eisenmann, Hans Hartmann, Thomas Waas

Proceedings Volume 3676, (1999) https://doi.org/10.1117/12.351082

KEYWORDS: Scattering, Raster graphics, Convolution, Modulation, Electron beam lithography, Photomasks, Optical proximity correction, X-ray lithography, Laser scattering, Lithography

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Proceedings Article | 23 April 1999 Paper

Geometrical E-beam proximity correction for raster scan systems

Nikola Belic, Hans Eisenmann, Hans Hartmann, Thomas Waas

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346218

KEYWORDS: Raster graphics, Convolution, Photomasks, Scattering, Optical proximity correction, X-ray lithography, Electron beam lithography, Optical simulations, Laser scattering, Spatial resolution

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Proceedings Article | 27 December 1996 Paper

Evaluation of a fast and flexible OPC package: OPTISSIMO

Wilhelm Maurer, Thomas Waas, Hans Eisenmann

Proceedings Volume 2884, (1996) https://doi.org/10.1117/12.262826

KEYWORDS: Optical proximity correction, Lithography, Precision calibration, Photomasks, Deep ultraviolet, Optics manufacturing, Etching, Data corrections, Manufacturing, Semiconductors

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Proceedings Article | 13 May 1994 Paper

Proximity correction of high-dosed frame with PROXECCO

Hans Eisenmann, Thomas Waas, Hans Hartmann

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175818

KEYWORDS: Electron beam lithography, Backscatter, Scattering, Error analysis, Solid state electronics, Laser scattering, Convolution, Deconvolution, Fourier transforms, Detection and tracking algorithms

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Showing 5 of 9 publications

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