KEYWORDS: Crystals, Deep ultraviolet, Pulsed laser operation, Sum frequency generation, Fiber lasers, Solid state lasers, High power lasers, Solid state physics, Laser frequency, Quantum cascade lasers
A 60-mW solid-state deep ultraviolet (DUV) laser at 193 nm with narrow linewidth is obtained with two stages of sum frequency generation in LBO crystals. The pump lasers, at 258 and 1553 nm, are derived from a homemade Yb-hybrid laser employing fourth-harmonic generation and Er-doped fiber laser, respectively. The Yb-hybrid laser, finally, is power scaling by a 2 mm×2 mm×30 mm Yb:YAG bulk crystal. Accompanied by the generated 220-mW DUV laser at 221 nm, the 193-nm laser delivers an average power of 60 mW with a pulse duration of 4.6 ns, a repetition rate of 6 kHz, and a linewidth of ∼640 MHz. To the best of our knowledge, this is the highest power of 193- and 221-nm laser generated by an LBO crystal ever reported as well as the narrowest linewidth of 193-nm laser by it. Remarkably, the conversion efficiency reaches 27% for 221 to 193 nm and 3% for 258 to 193 nm, which are the highest efficiency values reported to date. We demonstrate the huge potential of LBO crystals for producing hundreds of milliwatt or even watt level 193-nm laser, which also paves a brand-new way to generate other DUV laser wavelengths.
We are developing a 100-W level DUV light source using a solid-state seed laser and an ArF amplifier. Seed pulse at 193nm is generated by the sum frequency mixing of the pulse at 221nm and the pulse at 1553nm using CLBO crystals. To realize a compact and robust seed laser, we improved the conversion efficiency of DUV light generation. In case of the 221nm pulse generation, the conversion efficiency was increased from 22% to nearly 50% by optimizing the conversion process which enables the reduction of amplifier unit of fundamental light source to obtain the 1W seed pulse at 193nm.
KEYWORDS: Solid state lasers, Excimer lasers, Laser systems engineering, Deep ultraviolet, Optical amplifiers, Amplifiers, Crystals, High power lasers, Semiconducting wafers, Fiber amplifiers
We have been developing a hybrid 193 nm ArF laser system that consists of a solid state seeding laser and an ArF excimer laser amplifier for power-boosting. The solid state laser consists of an Yb-fiber-solid hybrid laser system and an Er-fiber laser system as fundamentals, and one LBO and three CLBO crystals for frequency conversion. In an ArF power amplifier, the seed laser passes through the ArF gain media three times, and an average power of 110 W is obtained. As a demonstration of the potential applications of the laser, an interference exposure test is performed.
We propose and report a 193 nm narrow-linewidth light generation by a frequency mixing of Yb and Er-fiber lasers as the seed for an ArF excimer laser. The Yb-fiber laser includes a pulsed distributed feedback (DFB) or external cavity diode laser (ECDL), acousto-optic modulator(AOM), fiber amplifiers and an Yb:YAG single crystal fiber (SCF) power amplifier with more than 7 W output. The Er-fiber laser consists of a continuous-wave (CW) DFB laser, a semiconductor optical amplifier (SOA), and fiber amplifiers. The second harmonic generation (SHG) and the fourth harmonic generation (FHG) of Yb laser at 515 nm and 258 nm reach 5 W and 1.5 W, respectively. Two stages of sum-frequency generation (SFG) produce the power of 100 mW for 193 nm laser by use of CLBO crystals.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.