Prof. Hongxing Jiang Profile

Prof. Hongxing Jiang

Professor at Texas Tech Univ

SPIE Involvement:

Author | Instructor

Publications (34)

Proceedings Article | 5 March 2022 Presentation

Development of µLED and µLED displays

Hongxing Jiang, Jingyu Lin

Proceedings Volume PC12001, PC120010Y (2022) https://doi.org/10.1117/12.2605821

KEYWORDS: Flat panel displays, Patents, Light emitting diodes, Visualization, Video, Ultraviolet detectors, Televisions, Optical sensors, Light sources and illumination, Large screens

Proceedings Article | 22 February 2018 Presentation + Paper

Erbium-doped GaN bulk crystals as a gain medium for eye-safe high energy lasers

Z. Y. Sun, Q. W. Wang, J. Li, J. Lin, H. Jiang

Proceedings Volume 10528, 105280E (2018) https://doi.org/10.1117/12.2293166

KEYWORDS: Erbium, Gallium nitride, Ytterbium, Crystals, Absorption, Semiconducting wafers, Polishing, Waveguides

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Proceedings Article | 29 August 2017 Paper

High-efficiency and high-sensitivity thermal neutron detectors based on hexagonal BN epilayers

A. Maity, S. Grenadier, J. Li, J. Y. Lin, H. X. Jiang

Proceedings Volume 10392, 103920L (2017) https://doi.org/10.1117/12.2271556

KEYWORDS: Ultraviolet detectors, Sensors, Solid state electronics, Absorption, Metalorganic chemical vapor deposition, Particles, Boron, Semiconductors, Electrons

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Proceedings Article | 9 September 2016 Paper

Thermal neutron detectors based on hexagonal boron nitride epilayers

T. Doan, A. Marty, J. Li, J. Y. Lin, H. X. Jiang

Proceedings Volume 9968, 99680S (2016) https://doi.org/10.1117/12.2239079

KEYWORDS: Sapphire, Sensors, Boron, Solid state electronics, Lithium, Semiconductors, Metalorganic chemical vapor deposition, Absorption, Dry etching, Crystals

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Proceedings Article | 24 February 2016 Paper

Optical excitation of Er centers in GaN epilayers grown by MOCVD

D. George, M. Hawkins, H. Jiang, J. Lin, J. Zavada, N. Vinh

Proceedings Volume 9744, 97440V (2016) https://doi.org/10.1117/12.2209695

KEYWORDS: Erbium, Gallium nitride, Luminescence, Semiconductors, Active optics, Chemical vapor deposition, Electrons, Signal detection, Spectroscopy

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Proceedings Article | 4 February 2013 Paper

Optoelectronic properties of hexagonal boron nitride epilayers

X. K. Cao, S. Majety, J. Li, J. Y. Lin, H. X. Jiang

Proceedings Volume 8631, 863128 (2013) https://doi.org/10.1117/12.2009115

KEYWORDS: Aluminum nitride, Absorption, Sapphire, Crystals, Metalorganic chemical vapor deposition, Photodetectors, Boron, Deep ultraviolet, Optoelectronics, Dielectrics

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Proceedings Article | 24 October 2012 Paper

Metal-semiconductor-metal neutron detectors based on hexagonal boron nitride epitaxial layers

S. Majety, J. Li, X. Cao, R. Dahal, J. Lin, H. Jiang

Proceedings Volume 8507, 85070R (2012) https://doi.org/10.1117/12.940748

KEYWORDS: Sensors, Boron, Semiconductors, Solid state electronics, Absorption, Metalorganic chemical vapor deposition, Signal detection, Particles, Sapphire, Semiconductor materials

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Proceedings Article | 21 January 2012 Paper

Full-scale self-emissive blue and green microdisplays based on GaN micro-LED arrays

J. Day, J. Li, D. Y. C. Lie, C. Bradford, J. Y. Lin, H. X. Jiang

Proceedings Volume 8268, 82681X (2012) https://doi.org/10.1117/12.914061

KEYWORDS: Indium gallium nitride, Light emitting diodes, Indium, Semiconductors, Gallium nitride, Metals, Silicon, Video, Sapphire, Solid state electronics

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Proceedings Article | 21 January 2012 Paper

Semiconducting hexagonal boron nitride for deep ultraviolet photonics

S. Majety, X. K. Cao, R. Dahal, B. Pantha, J. Li, J. Y. Lin, H. X. Jiang

Proceedings Volume 8268, 82682R (2012) https://doi.org/10.1117/12.914084

KEYWORDS: Deep ultraviolet, Magnesium, Aluminum nitride, Semiconductors, Boron, Graphene, Crystals, Quantum efficiency, Electronics, Doping

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Proceedings Article | 17 March 2010 Paper

Achieving p-InxGa1-xN alloys with high In contents

B. Pantha, A. Sedhain, J. Li, J. Lin, H. Jiang

Proceedings Volume 7602, 76020Z (2010) https://doi.org/10.1117/12.842313

KEYWORDS: Magnesium, Indium gallium nitride, Gallium nitride, Metalorganic chemical vapor deposition, Doping, Gallium, Luminescence, Temperature metrology, Hydrogen, Nitrogen

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Proceedings Article | 26 February 2010 Paper

1.54 μm emitter and optical amplifier based on Er doped InGaN/GaN

R. Dahal, J. Y. Lin, H. X. Jiang, J. M. Zavada

Proceedings Volume 7598, 759819 (2010) https://doi.org/10.1117/12.842325

KEYWORDS: Erbium, Light emitting diodes, Gallium nitride, Optical amplifiers, Absorption, Metalorganic chemical vapor deposition, Semiconductors, Ions, Photonic integrated circuits, Photonic devices

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Proceedings Article | 23 January 2010 Paper

III-nitride nanostructures for energy generation

B Pantha, J. Y. Lin, H. X. Jiang

Proceedings Volume 7608, 76081I (2010) https://doi.org/10.1117/12.840726

KEYWORDS: Solar energy, Indium gallium nitride, Solar cells, Thermoelectric materials, Electrodes, Gallium nitride, Photovoltaics, Hydrogen, Nanostructures, Quantum efficiency

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Proceedings Article | 6 February 2007 Paper

Achieving conductive high Al-content AlGaN alloys for deep UV photonics

Z. Fan, J. Lin, H. Jiang

Proceedings Volume 6479, 64791I (2007) https://doi.org/10.1117/12.715046

KEYWORDS: Aluminum nitride, Aluminum, Gallium, Magnesium, Zinc, Silicon, Gallium nitride, Deep ultraviolet, Excitons, Doping

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Proceedings Article | 28 February 2006 Paper

III-nitride deep ultraviolet micro- and nano-photonics

Z. Fan, J. Lin, H. Jiang

Proceedings Volume 6127, 61271C (2006) https://doi.org/10.1117/12.641250

KEYWORDS: Aluminum, Gallium, Light emitting diodes, Deep ultraviolet, Magnesium, Sapphire, Aluminum nitride, Microlens array, Ultraviolet light emitting diodes, Polarization

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Proceedings Article | 22 February 2006 Paper

GaN light-emitting triodes for high-efficiency hole injection and light emission

Jong Kyu Kim, J.-Q. Xi, Hong Luo, Jaehee Cho, Cheolsoo Sone, Yongjo Park, Thomas Gessmann, J. Zavada, H. Jiang, E. Fred Schubert

Proceedings Volume 6134, 61340K (2006) https://doi.org/10.1117/12.647453

KEYWORDS: Light emitting diodes, Ultraviolet radiation, Electron beam lithography, Aluminum, Gallium, Laser sintering, Gallium nitride, Ultraviolet light emitting diodes, Superlattices, Energy efficiency

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Proceedings Article | 15 February 2006 Paper

Time-resolved photoluminescence studies of Mg-doped AlN epilayers

N. Nepal, M. Nakarmi, J. Y. Lin, H. X. Jiang

Proceedings Volume 6118, 61180E (2006) https://doi.org/10.1117/12.651856

KEYWORDS: Aluminum nitride, Magnesium, Excitons, Picosecond phenomena, Gallium nitride, Aluminum, Gallium, Electromagnetic coupling, Luminescence, Metalorganic chemical vapor deposition

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Proceedings Article | 13 April 2005 Paper

Carrier dynamics in AlN and GaN epilayers at the elevated temperatures

Neeraj Nepal, Ki-Bum Nam, Jing Li, Jing Lin, Hongxing Jiang

Proceedings Volume 5725, (2005) https://doi.org/10.1117/12.590917

KEYWORDS: Aluminum nitride, Gallium nitride, Carrier dynamics, Temperature metrology, Phonons, Ultrafast phenomena, Semiconductor materials, Semiconductors, Nanostructure materials, Deep ultraviolet

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Proceedings Article | 20 October 2004 Paper

III-nitride blue and UV photonic-crystal light-emitting diodes

Jagat Shakya, Kyoung Hoon Kim, Tom Oder, Jing Yu Lin, Hong Xing Jiang

Proceedings Volume 5530, (2004) https://doi.org/10.1117/12.565632

KEYWORDS: Light emitting diodes, Near field scanning optical microscopy, Ultraviolet radiation, Ultraviolet light emitting diodes, Photonic crystals, Blue light emitting diodes, Gallium, Optical pumping, Near field optics, Electroluminescence

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Proceedings Article | 20 October 2004 Paper

Mg-doped Al-rich AlGaN alloys for deep UV emitters

Mim Nakarmi, Kyoung Hoon Kim, Kai Zhu, Jing Yu Lin, Hong Xing Jiang

Proceedings Volume 5530, (2004) https://doi.org/10.1117/12.566192

KEYWORDS: Magnesium, Light emitting diodes, Aluminum, Gallium, Deep ultraviolet, Temperature metrology, Aluminum nitride, Doping, Crystal optics, Metalorganic chemical vapor deposition

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Proceedings Article | 16 June 2004 Paper

Time-resolved photoluminescence studies of Si- and Mg-doped AlN epilayers

K. Nam, M. Nakarmi, J. Li, Jing Yu Lin, Hongxing Jiang

Proceedings Volume 5352, (2004) https://doi.org/10.1117/12.525752

KEYWORDS: Aluminum nitride, Silicon, Magnesium, Doping, Aluminum, Electromagnetic coupling, Picosecond phenomena, Excitons, Gallium nitride, Gallium

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Si and Mg-doped AlN epilayers were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. Deep ultraviolet (UV) picosecond time-resolved photoluminescence (PL) spectroscopy has been employed to study the optical transitions in the grown epilayers. The donor bound exciton (or I₂) transition was found to be the dominant recombination line in Si-doped AlN epilayers at 10 K and its emission intensity decreases with increasing Si dopant concentration. Doping induced band-gap renormalization effect has also been observed. Time-resolved PL results on Si-doped AlN revealed a linear decrease of PL decay lifetime with increasing Si dopant concentration, which was believed to be a direct consequence of the doping enhanced nonradiative recombination rates and corroborated the PL intensity results. For Mg-doped AlN epilayers, two emission lines at 4.70 and 5.54 eV have been observed at 10 K, which were assigned to donor-acceptor pair transitions involving Mg acceptor and two different donors (one deep and one shallow). From PL emission spectra and the temperature dependence of the PL emission intensity, a binding energy of 0.51 eV for Mg acceptor in AlN was determined. Together with previous experimental results, the Mg acceptor activation energy in AlGaN as a function of the Al content for the entire AlN composition range was obtained. The average hole effective mass in AlN was also deduced to be about 2.7 m₀ from the experimental value of Mg binding energy together with the effective mass theory. Although Mg acceptors are an effective mass state in ultra-large bandgap AlN, as a consequence of this large acceptor binding energy of 0.51 eV, only a very small fraction (about 10^-9) of Mg dopants can be activated at room temperature in Mg-doped AlN. Decay lifetimes of these emission lines are also measured as functions of emission energy, temperature, and excitation intensity. The implications of our finding on the applications of AlN epilayers for many novel devices will also be discussed.

Proceedings Article | 16 June 2004 Paper

Subpicosecond Raman studies of nonequilibrium electron transport in an In0.4Ga0.6N epilayer grown on GaN

W. Liang, Kong-Thon Tsen, David Ferry, K. Kim, Jing Yu Lin, Hongxing Jiang

Proceedings Volume 5352, (2004) https://doi.org/10.1117/12.528322

KEYWORDS: Gallium nitride, Electron transport, Raman spectroscopy, Scattering, Surface plasmons, Monte Carlo methods, Indium nitride, Luminescence, Semiconductors, Raman scattering

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Proceedings Article | 1 July 2003 Paper

III-nitrate ultraviolet photonic materials: epitaxial growth, optical and electrical properties, and applications

Jingyu Lin, Hongxing Jiang

Proceedings Volume 4999, (2003) https://doi.org/10.1117/12.483961

KEYWORDS: Aluminum, Gallium nitride, Doping, Ultraviolet radiation, Silicon, Magnesium, Excitons, Luminescence, Deep ultraviolet, Picosecond phenomena

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This paper summarizes some of the recent advances made by our group on the growth, characterization and applications of AlGaN alloys with high Al contents. Recently, our group has achieved highly conductive n-type Al_xGa_1-xN for x as high as 0.7 (a resistivity value as low as 0.15 ohm-cm has been achieved). Prior to this, only insulating Al_xGa_1-xN (x > 0.5) can be obtained. Our success is largely attributed to our unique capability for monitoring the optical qualities of these layers -- the development of the world's first (and presently only) deep UV picosecond time-resolved optical spectroscopy system for probing the optical properties of III-nitrides [photoluminescence (PL), electro-luminescence (EL), etc.] with a time-resolution of a few ps and wavelength down to deep UV (down to 195 nm). Our time- resolved PL results have shown that we must fill in the localization states (caused by alloy fluctuation) by doping before conduction could occur. The density of states of localization states is about 10¹⁸/cm³ in this system. It was also shown that Al_xGa_1-xN alloys could be made n-type for x up to 1 (pure AlN). Time-resolved photoluminescence (PL) studies carried out on these materials have revealed that Si-doping reduces the effect of carrier localization in Al_xGa_1-xN alloys and a sharp drop in carrier localization energy as well as a sharp increase in conductivity occurs when the Si doping concentration increases to above 1 x 10¹⁸ cm^-3. For the Mg-doped Al_xGa_1-xN alloys, p-type conduction was achieved for x up to 0.27. The Mg acceptor activation energy as a function of Al content has been deduced. Mg-δ-doping in GaN and AlGaN epilayers has been investigated. We have demonstrated that δ-doping significantly suppresses the dislocation density, enhances the p-type conduction, and reduces the non-radiative recombination centers in GaN and AlGaN. AlN epilayers with high optical qualities have also been grown on sapphire substrates. Very efficient band-edge PL emission lines have been observed for the first time with above bandgap deep UV laser excitation. We have shown that the thermal quenching of the PL emission intensity is much less severe in AlN than in GaN and the optical quality of AlN can be as good as GaN. From the low temperature (10 K) emission spectra, as well as the temperature dependence of the recombination lifetime and the PL emission intensity, the binding energies of the bound excitons and free excitons in AlN were deduced to be around 16 meV and 80 meV, respectively. From this, the energy bandgap of AlN epilayers grown on sapphire was found to be around 6.11 eV at 10 K. The observed large free exciton binding energy implies that excitons in AlN are extremely robust entities. This together with other well-known physical properties of AlN may considerably expand future prospects for the application of III-nitride materials.

Proceedings Article | 30 May 2003 Paper

Epitaxial growth and time-resolved photoluminescence studies of AIN epilayers

Ki-Bum Nam, Jing Li, M. Nakarmi, Jing Lin, Hongxing Jiang

Proceedings Volume 4992, (2003) https://doi.org/10.1117/12.479274

KEYWORDS: Excitons, Gallium nitride, Picosecond phenomena, Semiconductors, Temperature metrology, Metalorganic chemical vapor deposition, Aluminum nitride, Luminescence, Deep ultraviolet, Sapphire

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Proceedings Article | 11 June 2002 Paper

Time-resolved photoluminescence studies of Al-rich AlGaN alloys

Jing Li, Ki-Bum Nam, Tom Oder, KyoungHoon Kim, M. Nakarmi, Jing Lin, Hongxing Jiang

Proceedings Volume 4643, (2002) https://doi.org/10.1117/12.470429

KEYWORDS: Aluminum, Doping, Silicon, Magnesium, Gallium, Luminescence, Temperature metrology, Gallium nitride, Excitons, Metalorganic chemical vapor deposition

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Si-doped n-type Al_xGa_1MINxN alloys with x up to 0.5 and Mg-doped p-type Al_xGa_1-xN alloys with x up to 0.27 were grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. For the n-type Al_xGa_1-xN, we achieved highly conductive alloys for x up to 0.5. An electron concentration as high as 1x10¹⁸cm^-3 was obtained in Si-doped Al_0.5Ga_0.5N alloys with an electron mobility of 16 cm$_2)Vs at room temperature, as confirmed by Hall-effect measurements. Our results also revealed that the conductivity of Al_xGa_1-xN alloys continuously increases with an increase of Si doping level for a fixed value of Al content (X<0.5), the conductivities of Al_xGa_1-xN alloys decrease with increasing Al content for a given doping level; the critical Si-doping concentration needed to convert insulating Al_xGa$1-x)N with high Al contents (X>=0.4) to n- type conductivity is about 1 x 10¹⁸cm^-3. Time- resolved photoluminescence studies carried out on these materials have shown that Si-doping reduces the effect of carrier localization in Al_xGa_1-xN alloys and a sharp drop in carrier localization energy occurs when the Si doping concentration increases above 1x10¹⁸cm^-3, which directly correlates with the observed electrical properties. For the Mg-doped Al_xGa_1-xN alloys, p-type conduction was achieved for x up to 0.27, as confirmed by variable temperature Hall measurements. Emission lines of band-to-impurity transitions of free electrons with neutral Mg acceptors as well as localized excitons have been observed in the p-type Al_xGa_1-xN alloys. The Mg acceptor activation energies E_A were deduces from photoluminescence spectra and were found to increase with Al content and agreed very well with those obtained by Hall measurements. From the measured activation energy as a function of Al content, E_A versus x, the resistivity of Mg-doped Al_xGa_1-x with high Al contents can be deduced. Our results have also shown that PL measurements provide direct means of obtaining E_A especially where this cannot be obtained accurately by electrical methods due to high resistance of p-type Al_xGa_1-xN with high Al content.

Proceedings Article | 11 June 2002 Paper

Exciton-polariton propagation in AlGaN/GaN quantum-well waveguides probe by time-resolved photoluminescence

Tom Oder, Jing Li, Jing Lin, Hongxing Jiang

Proceedings Volume 4643, (2002) https://doi.org/10.1117/12.470430

KEYWORDS: Waveguides, Gallium nitride, Light wave propagation, Excitons, Semiconductors, Polaritons, Diffusion, Wave propagation, Luminescence, Quantum wells

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Proceedings Article | 23 April 2001 Paper

Optimizing GaN/AlGaN multiple quantum well structures by time-resolved photoluminescence

Jing Li, Kecai Zeng, Eunjoo Shin, Jing Lin, Hongxing Jiang

Proceedings Volume 4280, (2001) https://doi.org/10.1117/12.424744

KEYWORDS: Quantum efficiency, Gallium nitride, Metalorganic chemical vapor deposition, Quantum wells, Luminescence, Picosecond phenomena, Light emitting diodes, Interfaces, Piezoelectric effects, Ultraviolet radiation

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Proceedings Article | 23 April 2001 Paper

Growth and optoelectronic properties of III-nitride quaternary alloys

Jing Li, Ki-Bum Nam, KyoungHoon Kim, Tom Oder, H. Jun, Jing Lin, Hongxing Jiang

Proceedings Volume 4280, (2001) https://doi.org/10.1117/12.424740

KEYWORDS: Gallium nitride, Aluminum, Indium gallium nitride, Ultraviolet radiation, Quantum efficiency, Sensors, Atomic force microscopy, Optoelectronics, Heterojunctions, Ultraviolet detectors

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Proceedings Article | 28 March 2000 Paper

Exciton localization dynamics in AlxGa1-xN alloys

Hyeon Kim, Robin Mair, Jing Li, Jing Lin, Hongxing Jiang

Proceedings Volume 3940, (2000) https://doi.org/10.1117/12.381453

KEYWORDS: Excitons, Aluminum, Picosecond phenomena, Gallium nitride, Optical properties, Time resolved spectroscopy, Spectroscopy, Optoelectronic devices, Semiconductors, UV optics

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Proceedings Article | 9 November 1999 Paper

Optical properties of InGaN multiple quantum well microdisks

Dai Lun, Bei-Wei Zhang, Yu Zhang, Ruo Peng Wang, Xing Zhu, Jing Lin, Hongxing Jiang

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369401

KEYWORDS: Near field scanning optical microscopy, Near field optics, Optical properties, Indium gallium nitride, Quantum wells, Luminescence, Excitons, Optical microcavities, Optical filters, Ion beams

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Proceedings Article | 6 August 1999 Paper

Optical properties of III-nitride microcavities

Hongxing Jiang, Jing Lin

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356920

KEYWORDS: Gallium nitride, Microrings, Sapphire, Etching, Optical microcavities, Silicon, Dry etching, Optical properties, Scanning electron microscopy, Quantum efficiency

Proceedings Article | 24 May 1999 Paper

Piezoelectric effects on the dynamics of optical transitions in GaN/AlxGa1-xN multiple quantum wells

Hyeon Kim, Jing Lin, Hongxing Jiang, Weng Chow, Andrei Botchkarev, Hadis Morkoc

Proceedings Volume 3624, (1999) https://doi.org/10.1117/12.349295

KEYWORDS: Gallium nitride, Piezoelectric effects, Quantum wells, Picosecond phenomena, Luminescence, Temperature metrology, Excitons, Physics, Light emitting diodes

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Proceedings Article | 19 August 1998 Paper

Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities

Dai Lun, Bei-Wei Zhang, Robin Mair, Kecai Zeng, Jing Lin, Hongxing Jiang, Andrei Botchkarev, W. Kim, Hadis Morkoc, Muhammad Khan

Proceedings Volume 3547, (1998) https://doi.org/10.1117/12.319607

KEYWORDS: Picosecond phenomena, Optical properties, Quantum wells, Luminescence, Bessel functions, Excitons, Time resolved spectroscopy, Spectroscopy, Physics

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Proceedings Article | 23 April 1998 Paper

Dynamics of fundamental optical transitions in group III nitrides

Hongxing Jiang, Jing Lin

Proceedings Volume 3277, (1998) https://doi.org/10.1117/12.306144

KEYWORDS: Gallium nitride, Excitons, Temperature metrology, Metalorganic chemical vapor deposition, Indium gallium nitride, Picosecond phenomena, Semiconductor lasers, Quantum wells, Luminescence, Magnesium

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Proceedings Article | 30 September 1996 Paper

Preparation of silicon-based field emission materials

Guang Yuan, Young-Hyun Jin, C. Jin, Bin Zhang, Hee Song, Yongqiang Ning, T. Zhou, H. Jiang, Sijia Li, Ying Tian, C. Gu

Proceedings Volume 2892, (1996) https://doi.org/10.1117/12.253350

KEYWORDS: Diamond, Silicon, Silicon films, Electrons, Etching, Scanning electron microscopy, Diffraction, Coating, Particles, Chemisorption

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Showing 5 of 34 publications

Proceedings Volume Editor (6)

SPIE Conference Volume | 10 February 2006

Ultrafast Phenomena in Semiconductors and Nanostructure Materials X

SPIE Conference Volume | 13 April 2005

Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX

SPIE Conference Volume | 16 June 2004

Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII

SPIE Conference Volume | 30 May 2003

Ultrafast Phenomena in Semiconductors VII

SPIE Conference Volume | 11 June 2002

Ultrafast Phenomena in Semiconductors VI

Showing 5 of 6 publications

Conference Committee Involvement (8)

Quantum Sensing and Nanophotonic Devices IV

22 January 2007 | San Jose, California, United States

Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI

22 January 2007 | San Jose, California, United States

Ultrafast Phenomena in Semiconductors and Nanostructure Materials X

23 January 2006 | San Jose, California, United States

Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX

24 January 2005 | San Jose, California, United States

Ultrafast Phenomena in Semiconductors and Nanostructure Materials VIII

26 January 2004 | San Jose, CA, United States

Showing 5 of 8 Conference Committees

Course Instructor

SC741: III-Nitride Deep UV Photonics

This course provides attendees with an overview on recent advances in the deep ultraviolet (UV) photonic materials and devices based upon III-nitride wide bandgap semiconductors. The course covers fundamental material issues, micro- and nano-scale photonic device integration, deep UV emitter and detector fabrication, and device applications. The remaining foremost challenging issues and future development of nitride technologies will be discussed.

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