We study the operating speed of high-speed photodetector based on GaSb/GaInAsSb/GaAlAsSb heterostructure with frontal bridge contact depending on the wavelength, radiation power, and bias voltage. The ultra-fast fiber lasers and high-speed oscilloscope were used for measurements.
Low- noise avalanche photodiodes for the spectral range of 1.6-2.4 μm were created using the GaInAsSb solid solution
in the absorption region and the wide-gap GaAlX(As)Sb alloy of resonant composition (x=0.04) in the multiplication
region. This APD has a very high ratio of ionization coefficients, β/α>30 and low excess noise factor, F~1.6 (M=10).
The sensitivity of a receiver for longwavelength communication (λ=1.6-2.5 μm) based on GaInAsSb/AlGa(As)Sb SAM
APD is reported. The sensitivity for a direct detection receiver using the SAM APD was calculated according to the
treatment of Personick at bit rate B=500 Mbit/s. The dependence of minimum detectable power η<PAPD> on
multiplication M for the SAM APD for the wavelength λ=2.1 μm was calculated and compared with one for a standard
Ge APD operating at λ=1.55 μm. A minimum detectable power level η<PAPD> = -42.3 dBm at Mopt=34-39 and
η<PAPD>=-41.8 dBm at Mopt=10 of the receivers with the GaInAsSb/GaAl(As)Sb SAM APD and the Ge APD,
respectively were obtained. These results demonstrate the potential of an optical receiver with the
GaInAsSb/GaAl(As)Sb SAM APD for use in mid-IR wavelength optical communication system as well as of great
interest for their potential applications in laser range-finding system.
Mid-infrared photovoltaic detector (PD) designed on the base of a type II p-InAs/p-GaSb asymmetric heterostructure
with a deep AlSb/InAsSb/AlSb quantum well (QW) at the interface is reported. The heterostructures containing the
single QW were grown by LP-MOVPE. Transport, electroluminescent and photoelectrical properties of these structures
were investigated. Intense both positive and negative electroluminescence was observed in the spectral range 3-4 µm
above room temperature (300-400 K). Spectral response in the mid-infrared range 1.2-3.6 μm was obtained at
temperatures T=77-300 K. High quantum efficiency η=0.6-0.7 responsivity Sλ=1.4-1.7 A/W and detectivity
Dλ* =3.5×1011 cm Hz1/2w-1 were achieved at 77 K. Such QW PDs are suitable for heterodyne spectroscopy and free
space communication using quantum cascade lasers as well as for gas analysis and ecological monitoring applications.
Light-emitting diodes (LEDs) and spectral-matched photodiodes (PDs) based on GaInAsSb/AlGaAsSb and InAs/InAsSbP heterostructures grown by LPE and MOVPE for the spectral range 1.6-4.8 μm are presented. New aproach have been proposed to increase quantum efficiency and optical power of the LEDs. Optical sensors based on the LEDs and PDs are considered for detection of methane, carbon dioxide and some anaesthetics for medicine.
This paper reviews some recent developments in the high-speed photodiodes for 2.0-4.0 im spectral range. We report
investigation, design and fabrication of broad bandwidth (2 GHz) GaInAsSb/GaA1AsSb p-i-n photodiodes operating in
the 0.9-2.4 μm spectral range with submicroampere dark cunent. As well, we present InAs-based and InAs/InAsSbP
photodiodes with long-wavelength cutoff of 3.8 μm. An analysis of the photodiode performance through the
investigation of current-voltage, capacitance-voltage and spectral responsivity characteristics was carried out. Also, noise
and speed-response characteristics were studied. In addition to high-speed response and low noise level these
photodiodes offer room-temperature operation and hence are commercially viable. These devices are of great interest for
a wide range of applications, such as high-resolution laser diode spectroscopy of gases and molecules, eye-safe laser
rangefinding systems, the free-space optical link as well as systems of optical fiber communication.
In the present paper, we report the results of our investigation, which aims to upgrade the GaInAsSb-based photodiode heterostructure technology. The main requirements on GaInAsSb solid solutions from the viewpoint of near-infrared photodiode applications are considered. Such methods for decreasing a carrier concentration in the epitaxial layers of the solid solutions as doping with a donor impurity, the use of rare-earth element Yb, growth from lead containing melt are discussed. The possibility of decreasing the GaInAsSb band gap resulting in long- wavelength photosensitivity threshold shift is demonstrated. We have made GaInAsSb/GaAlAsSb photodiodes with the long- wavelength photosensitivity threshold of 2.4 micrometers . At -2V reverse bias a lowest dark current density is 3x10-3 A/cm2, and the quantum efficiency is 60-70% at (lambda)=2.0-2.1micrometers .
We report about light-emitting diodes (LEDs) and photodiodes (PDs) for the spectral ranges 1.8 - 2.4 micrometer and 2.9 - 4.7 micrometer based on multicomponent III-V alloys (GaInAsSb/GaAlAsSb, InAsSb/InAsSbP). High-efficiency small-dimension optoelectronic devices were applied to the design of novel set gas and moisture analyzers. Progress in development of different kinds of experimental models of the analyzers is demonstrated. Such portable sensors can be used for ecological monitoring, detecting industrial pollutants, and for various medical applications.
First observation of electroluminescence in type II broken-gap p-GaInAsSb/p-InAs single heterojunctions is reported. Intensive spontaneous emission was obtained under applied bias at T equals 77 - 300 K. Two narrow `resonant' emission bands were observed in the spectral range 3 - 5 micrometers at T equals 77 K with full width at half maximum about 1 - 2 kT. It was established that effect of unusual electroluminescence in isotype type II broken-gap p-p- heterostructure due to indirect (tunnel) radiative recombination of spatial separated 2D- electrons and holes localized in deep adjacent quantum wells at different sides of the interface. Novel tuneable mid-infrared light sources are proposed.
GalnAsSb/GaAlAsSb SAM APDs were fabricated and investigated.
The GaAlAsSb solid solution of the "resonant" composition (x=0.04, Eg = ?0 ) was used in the multiplication region of the devices. Large ionization rate ratio (?/? =60) and low excess noise factor ( F=Mf f=0.2) was experimentally observed.
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