Achieving high degree of tunability in photonic devices has been a focal point in the field of integrated photonics for several decades, enabling a wide range of applications from telecommunication and biochemical sensing to fundamental quantum photonic experiments. We introduce a novel technique to engineer the thermal response of photonic devices resulting in large and deterministic wavelength shifts across various photonic platforms, such as amorphous Silicon Carbide (a-SiC), Silicon Nitride (SiN) and Silicon-On-Insulator (SOI). In this paper, we demonstrate bi-directional thermal tuning of photonic devices fabricated on a single chip. Our method can be used to design high-sensitivity photonic temperature sensors, low-power Mach-Zehnder interferometers and more complex photonics circuits.
Recently there has been a growing interest in SiC on oxide integrated photonics platform, due to excellent linear and strong non-linear properties. Due to excellent thermal and mechanical properties, SiC devices are suitable for operations in harsh environments. In this work, we demonstrate the integration of two PCMs Ge2Sb2Te5 (GST) and Ag3In4Sb76Te17 (AIST) on a CMOS compatible amorphous SiC waveguide, grown using low-temperature CVD on oxide. We demonstrate a photonic memory, which can be programmed and accessed optically and we achieve multiple memory levels reliably on these devices. Furthermore, using time-resolved dynamic switching experiments we study the thermo-optical effects and switching speeds.
Future quantum optical networks will require an integrated solution to multiplex suitable sources and detectors on a low-loss platform. Here we combined superconducting single-photon detectors with colloidal PbS/CdS quantum dots (QDs) and low-loss silicon nitride passive photonic components to show their combined operation at cryogenic temperatures. Using a planar concave grating spectrometer, we performed wavelength-resolved measurements of the photoluminescence decay of QDs, which were deterministically placed in the gap of plasmonic antennas, in order to improve their emission rate. We observed a Purcell enhancement matching the antenna simulations, with a concurrent increase of the count rate on the superconducting detectors.
Superconducting nanowire single photon detectors (SNSPDs) have demonstrated advantages over traditional detectors in many fields [1]. Most fiber-coupled SNSPDs are coupled to single mode fibers, limiting their usability for applications where large surface area detectors are needed, for example fluorescence detection and satellite-based quantum communication [2][3]. Other important requirements for many applications are broadband detection efficiency, and low timing jitter [4]. So far, the increased meander length of multimode detectors, and the therefore increased kinetic inductance and number of imperfections due to film inhomogeneities have limited the timing jitter [5]. Moreover, combining low timing jitter with high detection efficiency and low dark count rate in one device is challenging due to the tradeoffs between different properties of SNSPDs [6].
In this paper, we achieved high efficiency and strong saturation over a broad wavelength range with a low timing jitter of 16.99 ps while maintaining a low dark count rate of < 0.2 Hz for an SNSPD coupled to a 50 µm core multimode fiber. To enhance the broadband absorption from 405 nm to 830 nm, detectors were fabricated on an optimized SiO2 cavity and Aluminum mirror. The geometry of the nanowire was also tuned to reach a good internal saturation of efficiency over the visible/NIR range but also to carry high current to get a large signal. Furthermore, a cryogenic readout amplifier was optimized to improve the signal to noise ratio and thus lead to high time resolution. Our devices can be readily used to enable higher resolution and faster quantum optics, bio-imaging, laser ranging and other optical experiments.
Quantum communication applications require a scalable approach to integrate bright sources of entangled photon-pairs in complex on-chip quantum circuits. Currently, the most promising sources are based on III/V semiconductor quantum dots. However, complex photonic circuitry is mainly achieved in silicon photonics due to the tremendous technological challenges in circuit fabrication. We take the best of both worlds by developing a new hybrid on-chip nanofabrication approach. We demonstrate for the first time on-chip generation, spectral filtering, and routing of single-photons from selected single and multiple III/V semiconductor nanowire quantum emitters all deterministically integrated in a CMOS compatible silicon nitride photonic circuit.
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