Dr. Jacques Beauvais Profile

Dr. Jacques Beauvais

Vice President Technology at Univ de Sherbrooke

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Author

Publications (21)

Proceedings Article | 29 August 2017 Paper

Microfabrication technologies for nanodevices

Jacques Beauvais

Proceedings Volume 10313, 1031322 (2017) https://doi.org/10.1117/12.2283870

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Proceedings Article | 14 February 2007 Paper

Integrated surface plasmon resonance sensor with periodic nanostructures for sensitivity enhancement

Z. Khalid, X. Hoa, C. Alleyne, M. Tabrizian, J. Beauvais, P. Charette, N. Nicorovici, R. McPhedran, A. Kirk

Proceedings Volume 6450, 64500J (2007) https://doi.org/10.1117/12.700619

KEYWORDS: Sensors, Mirrors, Diffraction, Diffractive optical elements, Refractive index, Gold, Surface plasmons, Metals, Diffraction gratings, Proteins

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Proceedings Article | 8 September 2006 Paper

Segmented waveguide array gratings made by electron beam lithography

Etienne Grondin, Jonathan Genest, Michel Duguay, Jacques Beauvais, Vincent Aimez

Proceedings Volume 6343, 63431F (2006) https://doi.org/10.1117/12.707739

KEYWORDS: Waveguides, Optical filters, Electron beam lithography, Optical design, Interfaces, Fiber Bragg gratings, Silica, Reflectors, Metals, Electronic filtering

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Proceedings Article | 21 June 2006 Paper

Plasma deposited and evaporated thin resists for template fabrication

Eric Lavallée, Jacques Beauvais, Bertrand Takam Mangoua, Dominique Drouin

Proceedings Volume 6281, 62810O (2006) https://doi.org/10.1117/12.692742

KEYWORDS: Plasma, Electron beam lithography, Photomasks, Lithography, Electron beams, Plasma enhanced chemical vapor deposition, Surface roughness, Glasses, Chromium, Line edge roughness

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Proceedings Article | 29 March 2006 Paper

Self-aligned direct write of a double-sided transistor gate on membrane using an evaporated e-beam resist

Jacques Beauvais, Prasad Kelkar, Eric Lavallée, Dominique Drouin, Kien Mun Lau

Proceedings Volume 6153, 615348 (2006) https://doi.org/10.1117/12.656823

KEYWORDS: Silicon, Electron beam lithography, Chromium, Monte Carlo methods, Electron beams, Transistors, Silicon films, Resistance, Plasma etching, Line edge roughness

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Proceedings Article | 6 May 2005 Paper

Fabrication of a 3D nano-imprint template with a conformal dry vapor deposited electron beam resist

Jacques Beauvais, Eric Lavallee, Andrew Zanzal, Dominique Drouin, Kien Mun Lau, Teodor Veres, Bo Cui

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599795

KEYWORDS: Etching, Lithography, Photomasks, Electron beam lithography, Electron beams, Photomicroscopy, Reactive ion etching, Silica, Metals, Optical lithography

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Proceedings Article | 6 May 2005 Paper

Resist sensitivity and thickness-based beam count optimization for parallel low energy E-beam exposure systems

Jacques Beauvais, Eric Lavallee, Dominique Drouin, Andrew Zanzal, Prasad Kelkar

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.599723

KEYWORDS: Electron beam lithography, Electron beams, Line edge roughness, Semiconducting wafers, Photomasks, Lithography, Systems modeling, Standards development, Line width roughness, Tolerancing

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Proceedings Article | 25 March 2005 Paper

High-performance terahertz source using ion implanted photoconductive antenna

Bassem Salem, Denis Morris, Vincent Aimez, Jean Beerens, Jacques Beauvais, Daniel Houde

Proceedings Volume 5727, (2005) https://doi.org/10.1117/12.592129

KEYWORDS: Antennas, Terahertz radiation, Ion implantation, Gallium arsenide, Ions, Electrodes, Terahertz sources, Ultrafast phenomena, Annealing, Signal detection

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Proceedings Article | 20 May 2004 Paper

Evaporated resist for the fabrication and replication of LEEPL mask

Melanie Cloutier, Yousef Awad, Eric Lavallee, David Turcotte, Jacques Beauvais, Dominique Drouin, Lau Kien Mun, Pan Yang, Pierre Lafrance, Ron Legario, Akira Yoshida, Hiroshi Nozue

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.535747

KEYWORDS: Photomasks, Charged-particle lithography, Etching, Electron beam lithography, Reactive ion etching, Mask making, Nickel, Optical lithography, Plating, Lithography

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Proceedings Article | 14 May 2004 Paper

Nanopatterning on fragile or 3D surfaces with sterol based vapour deposited electron beam resist

Ron Legario, Prasad Kelkar, Jacques Beauvais, Eric Lavallee, Dominique Drouin, Melanie Cloutier, David Turcotte, Pan Yang, Lau Mun, Yousef Awad, Pierre Lafrance

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.535775

KEYWORDS: Electron beam lithography, Photomasks, Semiconductor lasers, Lithography, Coating, Etching, Silicon, Zone plates, Semiconducting wafers, Electron beams

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A novel and effective approach to nano-fabrication lithography is the vapour deposition of the negative tone electron beam resists QSR-5 and QSR-15 (Quantiscript’s sterol based resist) onto a substrate. Vapour deposition is especially conducive for patterning thin delicate membranes (e.g. advanced masks for X-ray lithography - XRL, and Low Energy Electron Proximity Projection Lithography - LEEPL), that are susceptible to breakage during the spin coating process. With the capability for depositing highly uniform thin layers (<50nm) and a demonstrated resolution better than 60nm, QSR-5 and QSR-15 have potential for the fabrication of next generation lithography masks. Optimized for low energy electron exposure where proximity effects become negligible and thus well suited for 1X lithography mask patterning, QSR-5 and QSR-15 have shown exposure doses as low as 100μC/cm² at 3KeV. In addition to this type of application, the versatility of QSR-5 and QSR-15 have also been demonstrated by the fabrication of a Fresnel zone plate lens on the tip of an optical fibre with the goal of improving the coupling of diode laser emission into the fiber. This application clearly shows the capabilities of this process for producing nano-scale patterns on very small area surfaces that are completely unsuitable for spin-coating of the resist. A second demonstration of the resist's capabilities is the patterning of optical diffractive elements directly on the facet of a semiconductor laser. This opens the way to direct patterning on laser diode facets in order to control the emission profile from the device. It has also proven capabilities in the manufacture of delicate photo masks. In their natural state, QSR-5 and QSR-15 are solids at room temperature and are sterol based heterocyclic compounds, with unsaturated bonding capable of cross linking. On their own merit, QSR-5 and QSR-15 are capable of cross linking under electron beam exposure and are comparable in certain properties to conventional spin-coated resists such as PMMA. When cross linked, their heterocyclic structure gives it excellent selective resistance to solvent based developers (such as alcohols and ketones) for pattern formation. They have also been shown to be highly resistant to etching solutions, even when working with thin high resolution layers on the order of 30 nm. They are highly stable and have a relatively long shelf life, greater than one year. Compared to conventional resists utilizing complex, toxic, and expensive resin systems, QSR-5 and QSR-15 are non-toxic and significantly cost effective. Before evaporation, the resists are in a powder state that allows for direct evaporation and sublimation onto a target substrate that contributes to film uniformity and capabilities for a very thin film; the powder state allows for a wide degree of adjustment in temperature of the vapour chamber, as a means to achieving the desired film thickness and uniformity.

Proceedings Article | 15 December 2003 Paper

Effects of damage accumulation on quantum well intermixing by low-energy ion implantation in photonic devices

Martin Chicoine, Alexandre Francois, C. Tavares, S. Chevobbe, Francois Schiettekatte, Vincent Aimez, Jacques Beauvais, Jean Beerens

Proceedings Volume 5260, (2003) https://doi.org/10.1117/12.543537

KEYWORDS: Ions, Quantum wells, Indium gallium arsenide, Cladding, Diffusion, Ion implantation, Annealing, Luminescence, Photonic devices, Interfaces

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Proceedings Article | 17 February 2003 Paper

Dynamics of photo-excited carriers in self-assembled quantum dots

Denis Morris, Nathalie Perret, Daria Riabinina, Jean Beerens, Vincent Aimez, Jacques Beauvais, Simon Fafard

Proceedings Volume 4833, (2003) https://doi.org/10.1117/12.473944

KEYWORDS: Picosecond phenomena, Gallium arsenide, Quantum dots, Diffusion, Crystals, Doping, Phonons, Scattering, Carrier dynamics, Luminescence

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Proceedings Article | 27 December 2001 Paper

Low-energy ion implantation-induced control of InP-based heterostructure properties

Vincent Aimez, Jacques Beauvais, Dominique Drouin, Jean Beerens, Denis Morris, Serge Jandl

Proceedings Volume 4468, (2001) https://doi.org/10.1117/12.452544

KEYWORDS: Ion implantation, Heterojunctions, Ions, Semiconductor lasers, Quantum wells, Arsenic, Phosphorus, Annealing, Raman spectroscopy, Photonic integrated circuits

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Proceedings Article | 9 April 2001 Paper

Resistless electron beam lithography technique for the fabrication of x-ray masks

Eric Lavallee, Dominique Drouin, Jacques Beauvais

Proceedings Volume 4349, (2001) https://doi.org/10.1117/12.425086

KEYWORDS: Tantalum, Photomasks, Metals, Etching, Chromium, Silicon, Electron beam lithography, Fabrication, X-ray lithography, Nickel

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Proceedings Article | 15 December 2000 Paper

Multiple-channel InGaAs/InGaAsP electro-absorption intensity modulator fabricated using low-energy-phosphorus-ion-implantation-induced intermixing

Seng Lee Ng, Hwi Siong Lim, Boon Siew Ooi, Yee Loy Lam, Yan Zhou, Yuen Chuen Chan, Vincent Aimez, Jacques Beauvais, Jean Beerens

Proceedings Volume 4087, (2000) https://doi.org/10.1117/12.406442

KEYWORDS: Modulators, Quantum wells, Modulation, Phosphorus, Ion implantation, Photonic integrated circuits, Ions, GRIN lenses, Waveguides, Gallium

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Proceedings Article | 15 December 2000 Paper

High-quality photonic device fabrication using low-energy-ion-implantation-induced intermixing

Vincent Aimez, Jacques Beauvais, Jean Beerens, Hwi Siong Lim, Seng Lee Ng, Boon Siew Ooi

Proceedings Volume 4087, (2000) https://doi.org/10.1117/12.406460

KEYWORDS: Ion implantation, Semiconductor lasers, Heterojunctions, Arsenic, Waveguides, Ions, Annealing, Laser damage threshold, Oxides, Photonic devices

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Proceedings Article | 15 December 2000 Paper

High-precision metal masking for multiple-wavelength laser diode fabrication using single-step-ion-implantation-induced quantum well intermixing

Vincent Aimez, Jacques Beauvais, Jean Beerens, Boon Siew Ooi

Proceedings Volume 4087, (2000) https://doi.org/10.1117/12.406459

KEYWORDS: Copper, Heterojunctions, Ion implantation, Etching, Ions, Photomasks, Metals, Semiconductor lasers, Quantum wells, Phosphorus

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Proceedings Article | 9 November 1999 Paper

Photonic integration of InGaAs-InGaAsP laser using low-energy-implantation-induced quantum well intermixing

Hwi Siong Lim, Boon Siew Ooi, Yee Loy Lam, Yuen Chuen Chan, Yan Zhou, Vincent Aimez, Jacques Beauvais, Jean Beerens

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369389

KEYWORDS: Quantum wells, Annealing, Photonic integrated circuits, Arsenic, Ion implantation, Cladding, Waveguides, Ions, Laser damage threshold, Modulators

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Proceedings Article | 17 September 1998 Paper

Monolithic integration of multiple-emission-wavelength laser diodes using low-energy ion implantation

Vincent Aimez, Michel Paquette, Jacques Beauvais, Jean Beerens, Philip Poole, N. Sylvain Charbonneau

Proceedings Volume 3413, (1998) https://doi.org/10.1117/12.321941

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Proceedings Article | 30 July 1997 Paper

SEM techniques for materials characterization

Jacques Beauvais, Dominique Drouin, Raynald Gauvin

Proceedings Volume 10291, 102910B (1997) https://doi.org/10.1117/12.279839

KEYWORDS: Scanning electron microscopy, Material characterization, Electron microscopes, X-ray imaging, X-rays, Statistical analysis, Crystals, Photonic crystals, Crystallography, Semiconductors

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Proceedings Article | 11 May 1994 Paper

Enhanced quantum well intermixing using multiple ion implantation

Philip Poole, Paul Piva, Margaret Buchanan, Garth Champion, Ian Templeton, Geof Aers, Robin Williams, Alain Roth, Zbigniew Wasilewski, Emil Koteles, N. Sylvain Charbonneau, Jacques Beauvais

Proceedings Volume 2139, (1994) https://doi.org/10.1117/12.175702

KEYWORDS: Quantum wells, Ions, Ion implantation, Crystals, Semiconductors, Semiconducting wafers, Gallium, Gallium arsenide, Dielectrophoresis, Indium

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Showing 5 of 21 publications

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