Dr. Jaesoong Lee Profile

Dr. Jaesoong Lee

Postdoctoral Researcher at Virginia Commonwealth Univ

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Author

Publications (6)

Proceedings Article | 4 March 2011 Paper

Deep inductively coupled plasma etching of ELO-GaN grown with high fill factor

Haiyong Gao, Jaesoong Lee, Xianfeng Ni, Jacob Leach, Ümit Özgür, Hadis Morkoç

Proceedings Volume 7939, 793920 (2011) https://doi.org/10.1117/12.876870

KEYWORDS: Etching, Gallium nitride, Scanning electron microscopy, Epitaxial lateral overgrowth, Dielectrics, Plasma etching, Silica, Metalorganic chemical vapor deposition, Atomic force microscopy, Nickel

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Proceedings Article | 18 March 2010 Paper

Efficiency retention at high current injection levels in m-plane InGaN light emitting diodes

X. Li, X. Ni, J. Lee, M. Wu, Ü, Özgür, H. Morkoç, T. Paskova, G. Mulholland, K. Evans

Proceedings Volume 7602, 76021R (2010) https://doi.org/10.1117/12.843752

KEYWORDS: Light emitting diodes, External quantum efficiency, Gallium nitride, Electroluminescence, Quantum wells, Polarization, Indium gallium nitride, Sapphire, Internal quantum efficiency, Polarizers

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Proceedings Article | 17 March 2010 Paper

Non-polar m-plane GaN on patterned Si(112) substrates by metalorganic chemical vapor deposition

X. Ni, M. Wu, J. Lee, X. Li, A. Baski, Ü. Özgür, H. Morkoç

Proceedings Volume 7602, 760220 (2010) https://doi.org/10.1117/12.845652

KEYWORDS: Gallium nitride, Silicon, Metalorganic chemical vapor deposition, Indium gallium nitride, Silica, Light emitting diodes, Internal quantum efficiency, Scanning electron microscopy, Etching, Atomic force microscopy

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Proceedings Article | 12 March 2010 Paper

Internal quantum efficiency of m-plane InGaN on Si and GaN

J. Lee, X. Ni, M. Wu, X. Li, R. Shimada, Ü. Özgür, A. Baski, H. Morkoç, T. Paskova, G. Mulholland, K. Evans

Proceedings Volume 7602, 76021N (2010) https://doi.org/10.1117/12.843727

KEYWORDS: Light emitting diodes, Indium gallium nitride, Silicon, Gallium nitride, Sapphire, Polarization, Internal quantum efficiency, Quantum wells, Optical matrix switches, Optical components

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Proceedings Article | 11 March 2010 Paper

On carrier spillover in c- and m-plane InGaN light-emitting diodes

J. Lee, X. Li, X. Ni, Ü. Özgür, H. Morkoç, T. Paskova, G. Mulholland, K. Evans

Proceedings Volume 7602, 760224 (2010) https://doi.org/10.1117/12.845806

KEYWORDS: Light emitting diodes, Electron beam lithography, Gallium nitride, External quantum efficiency, Polarization, Quantum wells, Indium gallium nitride, Internal quantum efficiency, Electroluminescence, Quantum efficiency

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Proceedings Article | 16 February 2009 Paper

Investigation of vertical current-voltage characteristics of Al(Ga)N/GaN RTD-like heterostructures

J. Lee, Q. Fan, X. Ni, U. Ozgur, V. Litvinov, H. Morkoç

Proceedings Volume 7216, 72160S (2009) https://doi.org/10.1117/12.809435

KEYWORDS: Gallium nitride, Aluminum nitride, Heterojunctions, Doping, Resistance, Epitaxial lateral overgrowth, Quantum wells, Metalorganic chemical vapor deposition, Reactive ion etching, Polarization

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Showing 5 of 6 publications

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