Recent advances of high power and narrow bandwidth laser diodes emitting at 1.9 μm open the path to direct diode
pumping of Ho3+:YAG lasers. The usual method to pump such laser is to use thulium fiber laser which has an excellent
beam quality with high power and narrow bandwidth emission. The draw back of this system is the low efficiency of this
fiber laser and the increased overall complexity. In this paper we present first results of resonantly diode pumping of a
Ho3+:YAG laser with fiberlike geometry. The fiber coupled diode modules used for pumping in this work (BrightLockTMUltra-500) produce each 25 W at 1.91 μm with 3 nm linewidth. The fiber has a core diameter of 600 μm with 0.22
numerical aperture. The Ho3+:YAG crystal has a diameter of 1.2 mm, a length of 60 mm, a doping concentration of 0.75
at.% and is symmetrically pumped by two diode modules from both ends. Total internal reflection on the polished rod
barrel allows a high pump intensity along the rod length. The Ho3+:YAG laser cavity is composed of a high reflective flat
mirror and a concave output coupler with a radius of curvature of 500 mm. With an output coupler of 50 % we measured
a threshold of 11 W. The maximum output power was 11.87 W with a wavelength of 2.09 μm. The incident power to
output power slope efficiency was 0.38 at currently 4 % of internal losses.
Diode lasers in the 1400 nm to 1600 nm regime are used in a variety of applications including pumping Er:YAG lasers,
range finding, materials processing, aesthetic medical treatments and surgery. In addition to the compact size, efficiency,
and low cost advantages of traditional diode lasers, high power semiconductor lasers in the eye-safe regime are
becoming widely used in an effort to minimize the unintended impact of potentially hazardous scattered optical radiation
from the laser source, the optical delivery system, or the target itself.
In this article we describe the performance of high efficiency high brightness InP laser bars at 1470nm and 1550nm
developed at QPC Lasers for applications ranging from surgery to rangefinding.
An inverse lithography solution based on optimization is presented. The optimization approach, in effect, operates as an
inverse lithography tool, based on modeling and simulation of the manufacturing process. Given the associated
computational requirements, the proposed solution intentionally uses graphic processors (GPUs) as well as CPUs as computation hardware. Due to the approach we employed, the results are optimized towards manufacturability and process window maximization.
KEYWORDS: Semiconductor lasers, Diodes, Laser applications, High power lasers, Defense and security, Crystals, Continuous wave operation, Laser marking, RGB color model, Laser development
Compact, efficient visible lasers are important for heads up displays, pointing and illumination, undersea
communications, and less than lethal threat detection. We report on high power red, green, and blue lasers with output
powers above 3 watts and efficiencies greater than 20%, 15%, and 5% respectively.
InP based diode lasers are required to realize the next generation of eyesafe applications, including direct rangefinding
and HEL weapons systems. We report on the progress of high power eyesafe single spatial and longitudinal mode
1550nm MOPA devices, where we have achieved peak powers in excess of 10W with 50ns pulse widths. A conceptual
model based on our recent MOPA results show the path towards scaling to high powers based on spatial beam
combination with operating conditions suitable for direct rangefinding applications. We also report on the progress
towards high power 14xx and 15xx nm pump lasers for eyesafe HEL systems.
High power semiconductor lasers with wavelengths in the eye-safer region have application to a variety of defense,
medical and industrial applications. We report on the reliability of high power multimode and single mode InGaAsP/InP
diode lasers with wavelengths in the range 1320 to 1550 nm in a variety of configurations, including single-chip,
conduction-cooled arrays, arrays incorporating internal diffraction gratings, master-oscillator power amplifiers, and
fiber-coupled modules of the above. In all cases we show very low rates of degradation in optical power and the absence
of sudden failure from catastrophic optical damage or from laser-package interactions.
KEYWORDS: Diodes, Semiconductor lasers, Diode pumped solid state lasers, Solid state lasers, Fiber lasers, Absorption, High power lasers, Continuous wave operation, Laser systems engineering
The development of on-chip grating stabilized semiconductor lasers for diode pumped solid state lasers is discussed. The
diode lasers, specifically at wavelengths of 808nm, 976nm, and 1532nm are stabilized via internal gratings to yield a
typical center wavelength tolerance of ± 1nm, FWHM of < 1-2nm, and a temperature tuning coefficient of < 0.09 nm/°C.
We also report on the CW and QCW operation of conduction cooled bars, stacks, and fiber coupled modules.
Simulations show that on-chip stabilized pump sources yield performance improvements over standard pumping
schemes. A comparison in laser performance is shown for typical DPSS configuration.
We present recent advances in high power semiconductor laser bars and arrays at near infrared and eye-safe
wavelengths. We report on increased spectral brightness with internal gratings to narrow and stabilize the spectrum and
increased spatial brightness in multimode and single mode devices. These devices have the potential to dramatically
improve diode pumped systems and enable new direct diode applications.
We present recent advances in high power semiconductor laser bars and arrays at near infrared and eye-safe
wavelengths. We report on increased spectral brightness with internal gratings to narrow and stabilize the spectrum and
increased spatial brightness in multimode and single mode devices. These devices have the potential to dramatically
improve diode pumped systems and enable new direct diode applications.
We present recent advances in high power multimode and single semiconductor lasers. We review high power operation
with increased spectral brightness using on-chip internal gratings and increased spatial brightness at wavelengths from
the near infrared to the eye-safe regime. New high power, high brightness fiber coupled semiconductor lasers are
described.
We present recent advances in high power semiconductor laser bars and arrays at eye-safe wavelengths including
increased spectral brightness with internal gratings to narrow and stabilize the spectrum. These devices have the
potential to dramatically improve diode pumped Er:YAG systems and enable new direct diode applications.
KEYWORDS: Semiconductor lasers, Fiber couplers, High power lasers, Diodes, High power diode lasers, Waveguides, Nonabsorbing mirrors, Fiber lasers, Near infrared, Semiconductors
We present recent advances in high power semiconductor laser bars and arrays at near infrared wavelengths including
increased spectral brightness with internal gratings to narrow and stabilize the spectrum and increased spatial brightness
with multimode and high power single mode performance. These devices have the potential to dramatically improve
diode pumped systems and enable new direct diode applications.
We present recent advances in high power semiconductor lasers including increased spectral brightness using on-chip
internal gratings and increased spatial brightness at wavelengths from the near infrared to the eye-safe regime.
We present recent advances in high power semiconductor laser bars and arrays at wavelengths from the near infrared to the eye-safe regime including increased spectral brightness with internal gratings to narrow and stabilize the spectrum, increased spatial brightness with multimode and high power single mode performance, and reduced cost architectures from high power surface emitting 2-dimensional arrays. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.
We present theoretical analysis and experimental data from a monolithic semiconductor laser and optical parametric oscillator device which generates near-infrared laser beam and converts it to a longer mid-infrared wavelength by modal phase matching. The device design exploits the strong optical nonlinearity and transparency of III-V compound semiconductors while achieving phase matching of the near-infrared pump beam to the mid-infrared product beam(s). These devices have the potential to dramatically improve the CW Mid-IR power available at room temperature from monolithic semiconductor lasers, making them ideal for a broad range of applications including infrared countermeasures, detecting chemical weapons, imaging, and fog-penetrating optical communications.
We review recent advances in high power semiconductor lasers including increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime. Data are presented which demonstrate both edge emitter devices and high power surface emitting 2-dimensional arrays with internal gratings to narrow and stabilize the spectrum. Diodes with multimode high spatial brightness and high power single mode performance in the 808 and 976nm regime are described, and advances in high power bars at eye-safe wavelengths are presented. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications.
KEYWORDS: Semiconductor lasers, Diodes, High power lasers, Mirrors, Laser development, Reliability, Waveguides, High power diode lasers, Materials processing, Solid state lasers
Advances in high power semiconductor lasers such as increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime have the potential to dramatically improve diode pumped systems and enable new direct diode applications. Data are presented which demonstrate both edge emitter devices and high power surface emitting 2-dimensional arrays with internal gratings to narrow and stabilize the spectrum. Diodes with multimode high spatial brightness and high power single mode performance in the 808 and 976nm regime are described, and advances in high power arrays at eye-safe wavelengths are presented.
Highpower single mode InGaAs lasers for emitting at 980mn have been developed. Life test data and failure analysis results are discussed. Coupling efficiency into single mode fiber as a function of beam ellipticity is also studied.
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